Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing back contact HIT (Heterojunction with Intrinsic Thin Layer) solar cell based on P-type silicon chip

A solar cell and back-contact technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of small production capacity and high cost, achieve simple methods, reduce component production costs, and avoid electrode shading effects

Active Publication Date: 2011-09-14
山东力诺太阳能电力股份有限公司
View PDF6 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of them use laser technology, which has high cost and low production capacity.
The HIT battery reduces the thickness of the battery and improves the efficiency compared with the conventional crystalline silicon battery, but it still prints silver electrodes on the front of the battery, and the problem of shading rate has not been solved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing back contact HIT (Heterojunction with Intrinsic Thin Layer) solar cell based on P-type silicon chip
  • Method for manufacturing back contact HIT (Heterojunction with Intrinsic Thin Layer) solar cell based on P-type silicon chip
  • Method for manufacturing back contact HIT (Heterojunction with Intrinsic Thin Layer) solar cell based on P-type silicon chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Select P-type monocrystalline silicon wafer; P-type silicon wafer 1 undergoes a conventional cleaning process, and the surface is subjected to alkali texturing to remove the mechanical damage layer on the surface of the silicon wafer, remove surface oil and metal impurities, and form a pyramid-shaped textured surface. Increase the absorption of sunlight, increase the area of ​​the PN junction, and increase the short-circuit current. A layer of highly doped P+-type amorphous silicon thin layer 2 is deposited on the front surface of P-type silicon wafer 1 by amorphous silicon coating equipment, the film thickness is 50nm, and then a layer of intrinsic amorphous silicon is sequentially deposited on the back surface The thin silicon layer 3 has a film thickness of 1 nm, and the thin N-type amorphous silicon layer 4 has a film thickness of 150 nm. On the screen printing machine, according to the drawings in the manual figure 2 As shown in the mask pattern, SiO is printed o...

Embodiment 2

[0031] Select P-type polysilicon wafers; P-type silicon wafers 1 undergo a conventional cleaning process, and carry out alkali texturing on the surface, so as to remove the mechanical damage layer on the surface of the silicon wafer, remove surface oil and metal impurities, and form a pyramid-shaped textured surface to increase The absorption of sunlight increases the area of ​​the PN junction and increases the short-circuit current. A layer of highly doped P+-type amorphous silicon thin layer 2 is deposited on the front surface of P-type silicon wafer 1 by amorphous silicon coating equipment, the film thickness is 50nm, and then a layer of intrinsic amorphous silicon is sequentially deposited on the back surface The thin silicon layer 3 has a film thickness of 1 nm, and the thin N-type amorphous silicon layer 4 has a film thickness of 150 nm. On the screen printing machine, according to the drawings in the manual figure 2 As shown in the mask pattern, SiO is printed on the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for manufacturing a back contact HIT (Heterojunction with Intrinsic Thin Layer) solar cell on a P-type silicon substrate. In a manufacturing process provided by the invention, the conventional crystal silicon production process and thin film solar cell production process are combined, and a method is simple, so that industrialization can be realized rapidly; the transmission optical distance of sunlight is longer, and the thickness of the cell is reduced greatly compared with the conventional crystal silicon solar cell; all electrodes are printed on the back face of the cell, so that the problem of light shading of a front face electrode of the conventional solar cell is solved and the requirements for the electrode printing accuracy and the height-width ratio are lowered; and by adopting the cell in component production, the welding procedures can be reduced, a welding belt is saved, and the component production cost is lowered.

Description

technical field [0001] The invention relates to a method for preparing a solar cell, in particular to a method for preparing a back-contact HIT solar cell on a P-type silicon substrate. Background technique [0002] The rapid development of the solar energy industry requires an industrialized technology with simple process flow and high photoelectric conversion efficiency to reduce the cost of power generation and achieve the goal of being equal to or lower than the price of mains electricity. [0003] With the development of industrialization, conventional crystalline silicon cells have made great progress in improving conversion efficiency and reducing costs. However, the technical characteristics of conventional crystalline silicon cells limit the further reduction of their power generation costs, and it is difficult to achieve the goal of the same price as the mains electricity. Various solutions have emerged in the industry, including selective emitter solar cells, bac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/20
CPCY02P70/50
Inventor 徐振华杨青天李玉花姜言森刘鹏任现坤张春艳王兆光程亮
Owner 山东力诺太阳能电力股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com