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601 results about "Quantum dot laser" patented technology
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A quantum dot laser is a semiconductor laser that uses quantum dots as the active laser medium in its light emitting region. Due to the tight confinement of charge carriers in quantum dots, they exhibit an electronic structure similar to atoms. Lasers fabricated from such an active media exhibit device performance that is closer to gas lasers, and avoid some of the negative aspects of device performance associated with traditional semiconductor lasers based on bulk or quantum well active media. Improvements in modulation bandwidth, lasing threshold, relative intensity noise, linewidth enhancement factor and temperature insensitivity have all been observed. The quantum dot active region may also be engineered to operate at different wavelengths by varying dot size and composition. This allows quantum dot lasers to be fabricated to operate at wavelengths previously not possible using semiconductor laser technology.
Broadband light emitting device
ActiveUS7019325B2Increase heightBroad emission spectrumLaser detailsLaser optical resonator constructionStimulated emissionP–n junction
The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor heterostructure forming a PN junction and a waveguide. The semiconductor heterostructure includes a gain region with a contact means for biasing the PN junction so as to produce light emission including stimulated emission from an active zone of the gain region, and in the active zone a plurality of quantum dot layers, each quantum dot layer made up of a plurality of quantum dots and a plurality of adjoining layers, each adjoining layer adjacent to one of said quantum dot layers. The material composition or a deposition parameter of at least two adjoining layers is different. This ensures an enhanced emission spectral width.
Owner:EXALOS
Light Emitting Diode Unit, Display Apparatus Having the Same and Manufacturing Method of the Same
InactiveUS20100193806A1High color reproductionExtend your lifeSolid-state devicesSemiconductor/solid-state device manufacturingQuantum dot displayLength wave
Disclosed are a light emitting diode unit, a display apparatus having the same, and a method of manufacturing the same. The light emitting diode unit includes at least one light emitting diode, a quantum dot layer, and a buffer layer. The light emitting diode emits first light. The quantum dot layer is provided on the light emitting diode and includes a plurality of quantum dots that absorb the first light to emit second light having a wavelength different from a wavelength of the first light. The buffer layer is interposed between the light emitting diode and the quantum dot layer and separates the light emitting diode from the quantum dot layer. The buffer layer includes a scattering agent which is dispersed in resin to diffuse the light emitted from the light emitting diode.
Owner:SAMSUNG DISPLAY CO LTD
Radiation concentrator for a photovoltaic device
Concentrator for use with photovoltaic devices includes a waveguide (2) incorporating quantum dots. The quantum dots red-shift the incident radiation to produce red-shifted radiation which is internally reflected within the waveguide (2). A photovoltaic device (10) converts the red-shifted radiation to electrical energy.
Owner:IMPERIAL INNOVATIONS LTD
Novel, semiconductor-based, large-area, flexible, electronic devices
InactiveUS20080217622A1Good lattice matchingFinal product manufactureSemiconductor/solid-state device manufacturingHard disc drivePhotoluminescence
Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
Owner:GOYAL AMIT
Mist fabrication of quantum dot devices
InactiveUS20080238294A1Efficient depositionSpace can be allowedMaterial nanotechnologyLiquid surface applicatorsQuantum dotAerosol deposition
An example quantum dot (QD) device comprises a QD layer on a substrate, and may be fabricated by aerosol deposition, for example by mist deposition. An example approach includes providing a liquid precursor including QDs dispersed in a liquid carrier, generating a mist of droplets of the liquid precursor, directing the droplets towards the substrate so as to form a liquid precursor film on the substrate, and removing the liquid carrier from the liquid precursor film to form the quantum dot layer on the substrate. Example devices include multi-color QD-LED (light emitting diode) displays, and other devices.
Owner:PENN STATE RES FOUND
Quantum dot color filter, liquid crystal panel and display device
The invention relates to the technical field of display, which discloses a quantum dot color filter, a liquid crystal panel and a display device. The quantum dot color filter is used for the liquid crystal panel. The liquid crystal panel is provided with a plurality of pixels, wherein each pixel is provided with a plurality of sub-pixels. Each sub-pixel corresponds to a color. The color filter comprises sub-areas in one-to-one correspondence to the sub-pixels. At least one sub-area is formed by quantum dot materials. Light generated by the quantum dot materials activated is as same as the corresponding sub-pixel in color. According to the invention, the color filter of a display is formed by the quantum dot materials, and a red, or green, or blue filter is made of quantum dot materials which generate red, or green, or blue light through photoexcitation, so that the utilization ratio of a backlight source is improved, and meanwhile, colored light with higher purity can be obtained. Therefore, the quantum dot display can realize high color gamut and low power consumption of color display.
Owner:BOE TECH GRP CO LTD
Preparation method for fluorescence carbon-based quantum dot
The invention provides a preparation method for a fluorescence carbon-based quantum dot. The preparation method for the fluorescence carbon-based quantum dot at least comprises the steps of providing oxidized carbon-based quantum dot powder; providing a solvent, and dispersing the oxidized carbon-based quantum dot powder into the solvent to obtain the oxidized carbon-based quantum dot solution; adding a doping agent into the oxidized carbon-based quantum dot solution, reducing the oxidized carbon-based quantum dot by utilizing the solvent thermal reaction so as to obtain the doped carbon-based quantum dot. According to the invention, the technical scheme that oxidized carbon-based quantum dot is taken as a raw material and the solvent thermal reduction and doping are synchronously carried out is adopted, the carbon-based quantum dot represented by graphene quantum dot and carbon quantum dot can be reduced and doped by adopting various easily available nonmetal compounds or metal compounds through the solvent thermal reaction, the yield of a product is high, the regulation on the fluorescent spectrum of the carbon-based quantum dot can be realized, and the yield of quantum can be improved.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods
ActiveUS20080176749A1Improve performanceSuperconductors/hyperconductorsGalvano-magnetic material selectionNanodotPhotoluminescence
Novel articles and methods to fabricate same with self-assembled nanodots and / or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and / or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.
Owner:GOYAL AMIT
<100> or 45 degrees-rotated <100>, semiconductor-based, large-area, flexible, electronic devices
InactiveUS20110062446A1Good lattice matchingSuperconductors/hyperconductorsSemiconductor/solid-state device detailsHard disc drivePhotoluminescence
Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45°-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
Owner:GOYAL AMIT
Visible light photocatalytic film and preparation method thereof and lighting lamp with visible light photocatalytic film
InactiveCN104437548AAchieve circulationImprove purification effectGlobesMetal/metal-oxides/metal-hydroxide catalystsSemiconductor materialsAcupuncture
Owner:EAST CHINA NORMAL UNIV +1
Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices
InactiveUS7306963B2Good size uniformityNanoinformaticsSemiconductor/solid-state device manufacturingPhoton emissionFluorescence
Owner:SPIRE
Liquid crystal display screen, display device and quantum dot layer graphical method
ActiveCN103226260AImprove color gamutImprove display qualityLiquid surface applicatorsCoatingsQuantum yieldDisplay device
The invention discloses a liquid crystal display screen, a display device and a quantum dot layer graphical method. A plurality of pixel units are arranged in a liquid crystal panel; each pixel unit comprises a plurality of subpixel units capable of displaying different colors; and a monochromatic quantum dot layer is arranged at the position corresponding to at least one color of subpixel unit of each pixel unit. The embodiment of the invention substitutes the quantum dot layer for the conventional resin to serve as a color filter for converting background light into monochromatic light, the emission spectrum of the quantum dots is narrow and the luminous efficiency is high, and the background light can be efficiently converted into monochromic light, so the color gamut of the liquid crystal display screen can be improved, the color saturation is enhanced and the display quality of the display screen is improved. The monochromic quantum dots are dispersed by a high-molecular polymer network, so accumulation of the quantum dots can be avoided, the quantum yield is increased, the quantum excited lighting effect can be improved, contact of the monochromic quantum dots and oxygen can be avoided, and the service life of the quantum dots is prolonged.
Owner:BEIJING BOE OPTOELECTRONCIS TECH CO LTD
Multilayer polymer-quantum dot light emitting diodes and methods of making and using thereof
InactiveUS7132787B2Material nanotechnologyDischarge tube luminescnet screensQuantum dotLight-emitting diode
Owner:RGT UNIV OF CALIFORNIA
Colored filter layer, display substrate and display device
The invention provides a colored filter layer, a display substrate and a display device and belongs to the technical field of displaying. The colored filter layer, the display substrate and the display device can solve the problem that the utilization rate of a light source of an existing display device is low. The colored filter layer comprises a base and a colored filter arranged on the base. The colored filter includes a red unit, a green unit and a blue unit, wherein the red unit comprises a red quantum dot layer used for giving off red light under the stimulation of blue light, the green unit comprises a green quantum dot layer used for giving off green light under the stimulation of blue light, and the blue unit is not covered with a quantum dot layer and used for enabling blue light to be transmitted. The colored filter layer further comprises a planarization layer arranged on the colored filter and a smoothing layer which is located on the planarization layer and at least located at the position corresponding to the red unit and the green unit. The smoothing layer is used for filtering light except blue light out.
Owner:BOE TECH GRP CO LTD
Semiconductor-based, large-area, flexible, electronic devices on <100> oriented substrates
InactiveUS20080265255A1Improve performanceGood lattice matchingFinal product manufactureNanoinformaticsHard disc drivePhotoluminescence
Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
Owner:GOYAL AMIT
[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices
InactiveUS20080230779A1Good lattice matchingSolid-state devicesSemiconductor/solid-state device manufacturingHard disc drivePhotoluminescence
Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.
![[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices](https://images-eureka-patsnap-com.libproxy1.nus.edu.sg/patent_img/05ef1fe0-6ace-42a2-8058-990b1467d89a/US20080230779A1-20080925-D00000.png "[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices")
![[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices](https://images-eureka-patsnap-com.libproxy1.nus.edu.sg/patent_img/05ef1fe0-6ace-42a2-8058-990b1467d89a/US20080230779A1-20080925-D00001.png "[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices")
![[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices](https://images-eureka-patsnap-com.libproxy1.nus.edu.sg/patent_img/05ef1fe0-6ace-42a2-8058-990b1467d89a/US20080230779A1-20080925-D00002.png "[100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices")
Owner:GOYAL AMIT
Display panel and display device
ActiveCN106292049AImprove transmittanceAvoid depolarizationStatic indicating devicesPlanar/plate-like light guidesGratingRefractive index
The invention discloses a display panel and a display device. The display panel comprises a first underlayer substrate, a liquid crystal layer, a waveguide layer, a grating layer, a quantum dot color filter layer, a first electrode and a second electrode. The first electrode and the second electrode are used for adjusting the refractive index of the liquid crystal layer; the grating layer is used for controlling light to achieve coupling light exiting from the waveguide layer, and the coupling efficiency of coupling light exiting of the waveguide layer is determined according to the difference between the refractive index of the liquid crystal layer and the refractive index of the grating layer. According to the display panel and the display device, it is not needed to arrange a polarizing film in the display panel, the problem of quantum dot depolarization is avoided, and therefore a quantum dot material can be applied to the liquid crystal display device; the transmittance of the display panel is improved; the thickness of a liquid crystal box can be set to be small, and therefore the responding time of liquid crystals is shortened.
Owner:BOE TECH GRP CO LTD
Display apparatus having quantum dot layer
InactiveUS20120050632A1Improve display efficiencyImprove luminous efficiencySolid-state devicesNanoopticsQuantum dot displayLength wave
The present invention relates to a display apparatus, which has a quantum dot layer. The quantum dot layer has a plurality of quantum dot blocks which comprise quantum dots and are arranged in a matrix. The quantum dots when excited by the light convert the light wavelength so as to determine the color of each pixel of an image. As a result, the color filter of prior art can be omitted. Compared with the luminescent efficiency of the display apparatus of prior art, the luminescent efficiency of the display apparatus of the present invention can be raised.
Owner:CHI LIN OPTOELECTRONICS CO LTD
Quantum dot ink
ActiveCN105153807AReduce manufacturing costEasy to operateInksNanotechnologyOrganic solventCharge carrier
The invention relates to quantum dot ink which comprises a non-polar organic solvent, a surface tension adjustor and a hydrophobic quantum dot material, wherein the quantum dot material further comprises a carrier transportation material. The quantum dot material can be separated from the carrier transportation material. The quantum dot ink is suitable for ink-jet printing, and after ink-jet printing, the quantum dot material can be separated from the carrier transportation material, so that a two-layered structure of a hydrophobic quantum dot layer and a carrier transportation layer can be formed by printing at one time. Therefore, a quantum dot light emitting apparatus is prepared in an ink-jet printing manner, and operation is simplified, and the manufacturing cost of the quantum dot light emitting apparatus is lowered.
Owner:BOE TECH GRP CO LTD
High performance electrical, magnetic, electromagnetic and electrooptical devices enabled by three dimensionally ordered nanodots and nanorods
InactiveUS20090088325A1Improve performanceVacuum evaporation coatingSputtering coatingNanodotPhotoluminescence
Novel articles and methods to fabricate same with self-assembled nanodots and / or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and / or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.
Owner:GOYAL AMIT
Liquid crystal display
ActiveCN104765187ASolve the problem of light leakageIncrease contrastNon-linear opticsLiquid-crystal displayOrganic dye
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Quantum dot printing ink for ink-jet printing and preparation method thereof
The invention discloses quantum dot printing ink for ink-jet printing and a preparation method thereof. The quantum dot printing ink comprises, by weight, 0.1-20.0% of quantum dots, 40.0-90.0% of solvent, 0-20.0% of viscosity modifiers and 0-20.0% of surface tension modifiers. According to the formula, the obtained quantum dot printing ink has the certain viscosity, surface tension and volatilization property and can meet the requirements of a current ink-jet printer for the viscosity and surface tension, an ink-jet printing mode of a quantum dot light emitting layer is achieved, and the quantum dot light emitting layer with pixel matrixes, the high resolution and the electroluminescent performance is obtained. Meanwhile, printing ink compositions such as organic molecules in the printed and prepared quantum dot layer can be volatilized completely through the proper volatilization performance of the printing ink, therefore, the quantum dots can be arranged compactly, charge transportation among the quantum dots is effective, the turn-on voltage is reduced, and the energy efficiency is improved.
Owner:TCL CORPORATION
Quantum dot backlight module and display device
ActiveCN104566015AEffective coolingAchieve wide color gamutMechanical apparatusPoint-like light sourceGamutLight guide
The invention discloses a quantum dot backlight module, which comprises a light-emitting diode, a reflector plate, a light guide plate, a plurality of halftone dots and a plurality of quantum dots; the light guide plate is arranged above the reflector plate; the halftone dots are arranged on the upper surface of the light guide plate at intervals; the quantum dots are packaged in the corresponding halftone dots; the light-emitting diode is arranged at the side edge of the light guide plate; semiconductor quantum dot fluorescent powder fills in each quantum dot. According to the quantum dot backlight module disclosed by the invention, the use ratio of a quantum dot material can be effectively improved; as the halftone dots arranged at intervals are adopted and the quantum dots are packaged in the corresponding halftone dots, a whole quantum dot membrane is not needed, and the goals that the consumption of the quantum dot material is reduced, the cost is reduced are further achieved; moreover, the goals that the light-emitting diode effectively emits heat and a wide color gamut is realized can be achieved.
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Organic electroluminescent diode display device
ActiveCN103236435AIncrease brightnessImage color performance is goodOptical filtersSolid-state devicesDisplay deviceQuantum dot
The embodiment of the invention provides an organic electroluminescent diode display device, relates to the field of a display technology, and can realize the high resolution and improve the display quality of the display device. The organic electroluminescent diode display device comprises a light-emitting module and a colored membrane layer, wherein the colored membrane layer comprises a plurality of sub-pixels; at least one sub-pixel comprises a quantum dot material; and the light-emitting module comprises a plurality of light-emitting units corresponding to the sub-pixels on the colored membrane layer.
Owner:BOE TECH GRP CO LTD
Quantum dot laser pointing type backlight module and naked eye 3D display device
InactiveCN105223641ASimplify complexitySolve mutual interferenceOptical light guidesNon-linear opticsGratingDisplay device
The invention provides a quantum dot laser pointing type backlight module and naked eye 3D display device. The device comprises at least two rectangular light guide plates which are mutually tightly laminated. The light-exiting surface of each light guide plate comprises pixels of different nanometer grating orientations. Blue lights emitted by a light source group are collimated and come into the light guide plates. Groups of pixel arrays of the light-exiting surface of each light guide plate couple the lights in the light guide plate out of the surface of the light guide plate to form outgoing lights of different orientations. The outgoing lights irradiate red and green quantum dot pixel lasers corresponding to the surfaces of the light guide plates, so as to inspire red and green lights. Red, green and blue lights are in the same outgoing direction, so as to form a pointing type white light backlight source with different outgoing angles. The outgoing angles are corresponding to multi-angle images of a liquid crystal display LCD, so that color 3D display is formed and can be observed through naked eyes.
Owner:SVG TECH GRP CO LTD +1
Manufacturing method of full-color Micro-LED display device based on quantum dot photo-conversion layer
ActiveCN109979960AGuaranteed uniformityAccurate coatingSolid-state devicesSemiconductor devicesCrosstalk interferenceDisplay device
The invention discloses a manufacturing method of a full-color Micro-LED display device based on a quantum dot photo-conversion layer, and relates to the technical field of preparation of displays. The following problems are solved: existing quantum dot materials are directly coated with the surface of Micro-LED, and after a coating process is completely carried out, the quantum dot materials arranged above adjacent pixel units can be horizontally diffused in a low-temperature heat annealing process, and serious optical crosstalk interference can be caused by mixing the different quantum dot materials. Light source arrays are tightly adhered with quantum dot film layers so that difficult separation between the light source arrays and the quantum dot film layers is achieved; a photo-conversion layer base plate is prepared by coating quantum dot material subareas of different colors with different positions of glass or polymer base plates; a monochromatic Micro-LED display array is adhered with the photo-conversion base plate, so that full-color display of the Micro-LED is realized. A DBR reflective mirror is prepared at the bottom of a groove so as to inhibit emission of the monochromatic Micro-LED display array, so that a light source utilization ratio is increased. The full-color Micro-LED display device prepared by adopting the method has the advantages of less optical crosstalk interference of the adjacent pixels, high utilization ratio of excitation light sources and high display quality.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
InactiveUS6849862B2Improve efficiencyEasy to useMaterial nanotechnologyPolycrystalline material growthQuantum dotWide band
A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.
Owner:KYMA TECH
LED composite full-spectrum light source capable of promoting plant growth
InactiveCN105202484AUniform colorSolve the provoking problemPoint-like light sourceSpectral modifiersFull waveEffect light
The invention discloses an LED composite full-spectrum light source capable of promoting plant growth. Light emitted by an LED light source is irradiated to rare earth phosphor powder, and then an emission spectrum band is formed and comprises two or more emission peaks in the range of 350-1,100 nm. Quantum dot materials are added to the rare earth phosphor powder, the emission peaks of the emission spectrum band are adjusted in the full-wave band range of 350-1,100 nm through selection of quantum dot material composition elements and adjustment of particle sizes. The rare earth phosphor powder is any one or more of phosphor powder with the spectrum ranging from 350 nm to 1,100 nm. The LED composite full-spectrum light source has the effects that the photorefraction consumption rate is reduced, the light source color and luster are uniform, light polarization is avoided, the lighting effect is improved, the structure is simple and the cost is saved.
Owner:李欣澄
Broadband light emitting device
ActiveUS20050279989A1Increase heightBroad emission spectrumLaser detailsLaser optical resonator constructionStimulated emissionP–n junction
The invention concerns a superluminescent light emitting diode (SLED) comprising a semiconductor heterostructure forming a PN junction and a waveguide. The semiconductor heterostructure includes a gain region with a contact means for biasing the PN junction so as to produce light emission including stimulated emission from an active zone of the gain region, and in the active zone a plurality of quantum dot layers, each quantum dot layer made up of a plurality of quantum dots and a plurality of adjoining layers, each adjoining layer adjacent to one of said quantum dot layers. The material composition or a deposition parameter of at least two adjoining layers is different. This ensures an enhanced emission spectral width.
Owner:EXALOS
Display panel and display device
InactiveCN109471300AEasily damagedEliminate moiréSolid-state devicesNon-linear opticsLiquid-crystal displayGrating
The invention discloses a display panel and a display device. The display panel comprises a first display module and a second display module which is located at the light emission side of the first display module; the second display module is a liquid crystal display module, and the first display module is used for modulating light rays entering the second display module; the first display modulecomprises multiple first pixel units which are distributed in an array; the second display module comprises multiple second pixel units which are distributed in an array; the display panel further comprises quantum dot layers between the first pixel units and the second pixel units. By adopting a mode that emergent light of the first pixel units excites quantum dots, mixed-color light is generated, and backlight is provided for the second display module. Quantum dot materials in the quantum dot layers are emitted to the periphery at all angles through the light rays emitted by stimulation, theoriginal propagation direction of the ray lights is changed, the generated light rays can better damage a pattern generated by a periodicity grating structure, and accordingly the moire fringe is removed.
Owner:HISENSE VISUAL TECH CO LTD
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