The invention discloses a manufacturing method of a full-color Micro-
LED display device based on a
quantum dot photo-conversion layer, and relates to the technical field of preparation of displays. The following problems are solved: existing
quantum dot materials are directly coated with the surface of Micro-LED, and after a
coating process is completely carried out, the
quantum dot materials arranged above adjacent pixel units can be horizontally diffused in a low-temperature heat annealing process, and serious optical
crosstalk interference can be caused by mixing the different
quantum dot materials.
Light source arrays are tightly adhered with
quantum dot film
layers so that difficult separation between the
light source arrays and the
quantum dot film
layers is achieved; a photo-conversion layer base plate is prepared by
coating quantum dot material subareas of different colors with different positions of glass or
polymer base plates; a monochromatic Micro-
LED display array is adhered with the photo-conversion base plate, so that full-color display of the Micro-LED is realized. A DBR reflective mirror is prepared at the bottom of a groove so as to inhibit emission of the monochromatic Micro-
LED display array, so that a
light source utilization ratio is increased. The full-color Micro-LED
display device prepared by adopting the method has the advantages of less optical
crosstalk interference of the adjacent pixels, high utilization ratio of excitation light sources and high display quality.