Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot ink

A technology of quantum dots and quantum dot materials, applied in the field of quantum dot inks, can solve problems such as difficulty in obtaining high-viscosity quantum dot inks and printing difficulties

Active Publication Date: 2015-12-16
BOE TECH GRP CO LTD
View PDF7 Cites 47 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Quantum dot inks are usually dispersed in organic solvents by quantum dot materials. Since the quantum dot materials themselves are nanoparticles, it is difficult to obtain high-viscosity quantum dot inks, which makes printing difficult.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot ink
  • Quantum dot ink
  • Quantum dot ink

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] In a specific embodiment, the quantum dot ink has the following composition: oxadiazole (electron transport material) 5%; Hydrophobic quantum dot material CdSe 2%; Caprylic acid (surface tension regulator) 1%, non-polar organic solvent n-hexane Alkanes 92%.

[0050] When preparing the above quantum dot ink, prepare each component according to the mass ratio, first mix the hydrophobic quantum dot material CdS and the non-polar organic solvent n-hexane; then add the electron transport material oxadiazole, Mix evenly; finally add the surface tension regulator caprylic acid, mix evenly. The above-mentioned mixing methods include electromagnetic stirring, shaking and / or ultrasonic dispersion and the like. The order of mixing is not limited to the above order, as long as a uniformly dispersed mixture of hydrophobic quantum dot materials is finally obtained. After the quantum dot ink is prepared, it is tested that the viscosity of the quantum dot ink is 10 cp (25° C.), and t...

Embodiment 2

[0064] In another specific embodiment, the quantum dot ink has the following composition: CBP (4,4'-N, N'-dicarbazole-biphenyl) (hole transport material) 5%; hydrophobic quantum dot material CdSe2 %; octanoic acid (surface tension regulator) 1% and non-polar organic solvent n-hexane 92%. The same content as in the foregoing embodiments will not be repeated here, and the same below.

[0065] The difference from the previous embodiment is that the electron transport material is replaced by the hole transport material, so the preparation sequence of each layer in the quantum dot light-emitting device needs to be reversed.

[0066] The following will be combined with figure 2 A method for preparing a quantum dot light-emitting device by printing with the above quantum dot ink is described.

[0067] like figure 2 As shown, a metal cathode 201 and a pixel defining layer 202 are first prepared on a base substrate 200 .

[0068] Then, an electron injection layer 203 and an electro...

Embodiment 3

[0073] In a specific embodiment, the quantum dot ink has the following composition: thiadiazole (electron transport material) 5%; hydrophobic quantum dot material ZnO 20%; octadecylamine (surface tension regulator) 1% and non-polar organic Solvent cyclohexane 74%. The quantum dot ink was configured in the same manner as in Example 1. After testing, the viscosity of the quantum dot ink was 10.5 cp (25° C.), and the surface tension was 33 dynes / cm (25° C.).

[0074] A quantum dot light-emitting device was prepared in the same manner as in Example 1 to obtain an electron transport layer with a thickness of 5 nm and a quantum dot material layer with a thickness of 15 nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
boiling pointaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to quantum dot ink which comprises a non-polar organic solvent, a surface tension adjustor and a hydrophobic quantum dot material, wherein the quantum dot material further comprises a carrier transportation material. The quantum dot material can be separated from the carrier transportation material. The quantum dot ink is suitable for ink-jet printing, and after ink-jet printing, the quantum dot material can be separated from the carrier transportation material, so that a two-layered structure of a hydrophobic quantum dot layer and a carrier transportation layer can be formed by printing at one time. Therefore, a quantum dot light emitting apparatus is prepared in an ink-jet printing manner, and operation is simplified, and the manufacturing cost of the quantum dot light emitting apparatus is lowered.

Description

technical field [0001] The present disclosure relates to the field of display technology, in particular to quantum dot ink. Background technique [0002] Quantum Dots Light Emitting Diode Displays (Quantum Dots Light Emitting Diode Displays, QLED) is a new type of display technology developed on the basis of organic light emitting displays. The difference is that its electroluminescent structure is a quantum dot layer. The principle is that electrons are injected into the quantum dot layer through the electron transport layer, holes are injected into the quantum dot layer through the hole transport layer, and electrons and holes recombine in the quantum dots to emit light. Compared with organic light-emitting diode display devices, QLED has the advantages of narrow luminescence peak, high color saturation, and wide color gamut. [0003] At present, pixelization and full-colorization of QLED are technical problems. The solutions include inkjet printing method, transfer pri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/30B82Y40/00H10K99/00
CPCC09D11/322H01B1/20C09D11/36C09D11/38C09D11/50C09K11/025C09K11/70C09K11/7492C09K11/876C09K11/883H10K71/135H10K85/6565H10K50/115H10K50/16H10K50/15H10K71/00H10K85/615H10K85/633H10K85/636H10K85/654H10K85/656H10K85/6572C09D11/52
Inventor 何晓龙姚琪刘圣烈舒适曹占锋徐威
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products