N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure and preparation method thereof

Abstract

The invention relates to an N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure and a preparation method thereof. The structure is characterized in that the illuminated surface of an N-type silicon substrate comprises an illuminated surface n-type amorphous or microcrystalline silicon layer and an antireflection layer from inside to outside in sequence; the shady surface comprises an intrinsic amorphous or microcrystalline silicon layer, a p-type amorphous or microcrystalline silicon layer and a shady surface n-type amorphous or microcrystalline silicon layer from inside to outside in sequence; the p-type amorphous or microcrystalline silicon layer and the shady surface n-type amorphous or microcrystalline silicon layer are separated by an interval and are alternately arranged on the intrinsic amorphous or microcrystalline silicon layer; transparent conducting thin films cover the p-type amorphous or microcrystalline silicon layer and the shady surface n-type amorphous or microcrystalline silicon layer; and metal electrodes are arranged on the transparent conducting thin films. The HIT solar cell structure and the preparation method have the following beneficial effects: in combination with the preparation methods of the conventional crystalline silicon solar cells and the thin film solar cells and relative to the traditional HIT cells, the preparation process is simple, the usage amount of the metal electrodes is reduced, and the problem that the front electrodes of the conventional solar cells shade light is avoided, thus improving the efficiency of the solar cell.

Description

technical field [0001] The invention relates to the technical field of crystalline silicon solar cells, in particular to a structure and preparation method of a back-contact HIT solar cell based on an N-type silicon substrate. Background technique [0002] The rapid development of the solar energy industry requires an industrialized technology with simple process flow and high photoelectric conversion efficiency to reduce the cost of power generation and achieve the goal of being equal to or lower than the price of mains electricity. [0003] With the development of industrialization, the current conventional crystalline silicon cells have made great progress in various aspects such as improvement of conversion efficiency and cost reduction, but their structure and technical characteristics limit the further improvement of their efficiency. As a result, various solutions have emerged in the industry, including selective emitter solar cells, back contact solar cells, HIT ce...

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Problems solved by technology

But it needs to print metal electrodes on the front side, which significantly reduces the utilization efficiency of sunlight

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