60results about How to "Avoid light absorption" patented technology

The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.

In a side view LED, elongated first and second lead frames each have a finger extending therefrom. The finger of the first lead frame is disposed in parallel with that of the second lead frame. An LED chip and a protective device are mounted on mounting areas of the first and second lead frames, respectively and electrically connected to the first and second lead frames. A package body houses the first and second lead frames to form first and second opened areas. The first opened area is externally opened around the LED chip, the second opened area is externally opened around the protective device, and the partition wall is formed therebetween. First and second encapsulants are provided to the first and second opened areas, respectively to encapsulate the LED chip and protective device, respectively. At least the first encapsulant is transparent.

Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a second conductive semiconductor layer, an active layer over the second conductive semiconductor layer, and a first conductive semiconductor layer over the active layer, a dielectric layer in a cavity defined by removing a portion of the light emitting structure, and a second electrode layer over the dielectric layer.

Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a second conductive semiconductor layer, an active layer over the second conductive semiconductor layer, and a first conductive semiconductor layer over the active layer dielectric layer in a cavity defined by removing a portion of the light emitting structure, and a second electrode layer over the dielectric layer.

The invention relates to structure of LED. Most of Si substrate with Miller indices as 100 is removed by using photo-resistetching. Meanwhile, part of Boron monophosphide layer near crystal lattice of Si substrate is removed by using photo-resistetching. Micro removing is carried out for LED by photo etching or a micro-lens is made at exacatin of removed structure for focusing light. A reflecting minor with multilayer films is formed above LED through procedure of coating by vaporization or epitaxy process in order to reflect emitting light. Thus, the LED with structure of backside emitting is made: preventing light absorption by Si substrate; reflecting minor with multilayer films and micro-lens reflect and focus light emitted by LED so as to raise luminous efficiency.

The invention relates to an LED (Light-Emitting Diode) plane light source and a method for increasing the light guiding efficiency thereof, belonging to the technical field of light sensing engineering application. The LED plane light source is characterized in that a light reflection layer is arranged between the side of a light guiding plate and a PCB (Printed Circuit Board), a light outlet is prearranged at a position on the light reflection layer corresponding to LED light sources, and the PCB, the light reflection layer and the light guiding plate clings to each other in sequence; and the LED light sources respectively arranged at two opposite sides of the light guiding plate are arranged in ways of mutual cross and ectopic complementation. One side of each of the LED light sources is additionally provided with the light reflection layer on which the light outlet is prearranged, thus the light reflection at the side of the light guiding plate is avoided, light emitted by an LED is directly led out through the light outlet by the light guiding plate, and the light incidence efficiency is increased; the LED light sources are arranged in ways of mutual cross and ectopic complementation, thus, the condition that the LED absorbs the light from the opposite LED per se is avoided, and the light guiding efficiency is increased; and on the basis of ensuring same brightness, the consumption of the LEDs can be reduced and the lost can be lowered.

Provided is a light emitting device with high extraction efficiency, in which absorption of light by a conductive wire is prevented effectively. The light emitting device includes a conductive wire electrically connecting an electrode of a light emitting element and an electrically conductive member. The surface of the bonding portion of the conductive wire between the conductive wire and at least one of the electrode of the light emitting element and the electrically conductive member is covered with a metal film. The reflectivity of the metal film is higher than that of the conductive wire at the emission peak wavelength of the light emitting element.

The invention relates to rare earth niobium tantalate fluorescent powder with adjustable luminous chroma, a preparation method and application of the rare earth niobium tantalate fluorescent powder. The fluorescent powder is niobate and tantalate which are activated by Eu3+, and the molecular formula of the fluorescent powder is R(1-z)EuzCaM3O10, wherein M is at least one of Nb and Ta, R is at least one of La3+, Sm3+, Gd3+, Lu3+ and Y3+, z is the molar percentage of Eu3+ doping amount, and z is greater than 0.0001 and less or equal to 1.0. The preparation method comprises the following steps of: weighing raw materials according to the proportion; porphyrizing and uniformly mixing the raw materials, and pre-sintering at a temperature of 300-1,000 DEG C; cooling, taking out the mixture and grinding; and calcining in an air atmosphere at a temperature of 1,200-1,500 DEG C. Along with the increase of the molar percentage of Eu3+ doping amount, the chroma of the fluorescent powder can be changed from blue green to white and then red. The fluorescent powder can be applied to various illumination display and photoluminescence chroma adjustment taking ultraviolet light or near-ultraviolet light as an excitation source.

The invention discloses semi-reflecting and semi-transmitting glass with the advantages of high hardness, acid and alkali corrosion resistance, alkali liquor ultrasound resistance, scratch resistance and high post-procedure machinability. The reflectivity of the semi-reflecting and semi-transmitting glass refers to any reflectivity in a range from 18 percent to 75 percent. The semi-reflecting and semi-transmitting glass comprises a glass substrate, a first low-refractive index layer, a first high-refractive index layer, a second low-refractive index layer, a second high-refractive index layer, a third low-refractive index layer, a third high-refractive index layer and a fourth high-hardness refractive index layer which are sequentially laminated with one another, wherein the first low-refractive index layer is made of SiO2; the first high-refractive index layer is made of Nb2O5; the second low-refractive index layer is made of SiO2; the second high-refractive index layer is made of Nb2O5; and the third low-refractive index layer is made of SiO2. The hardness of the semi-reflecting and semi-transmitting glass can be 7H, and the semi-reflecting and semi-transmitting glass has the advantages of acid and alkali corrosion resistance, alkali liquor ultrasound resistance, scratch resistance and high post-procedure machinability. The invention also discloses a method for preparing the semi-reflecting and semi-transmitting glass.

The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.