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A LED manufactured on the SiC substrate

A technology of light-emitting diodes and substrates, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low LED efficiency and achieve the effects of increasing output power, reducing absorption, and reducing heat generation

Inactive Publication Date: 2007-10-24
SHANDONG UNIV
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  • Abstract
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Problems solved by technology

The effect of temperature on LED brightness is approximately an inverse linear relationship, the higher the temperature, the lower the LED efficiency

Method used

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  • A LED manufactured on the SiC substrate
  • A LED manufactured on the SiC substrate
  • A LED manufactured on the SiC substrate

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Embodiment

[0029] The structure of the light-emitting diode prepared on the SiC substrate of the present invention is shown in Figure 5, which includes a p-type AlInGaN layer 3, a light-emitting layer 4, an n-type AlInGaN layer 5 and a transparent SiC substrate 8 from top to bottom. The positive electrode 2 is provided on the n-type AlInGaN layer 3 , and the negative electrode 1 is provided on the n-type AlInGaN layer 5 . The substrate can be a transparent 6H-SiC single crystal wafer or a transparent 4H-SiC single crystal wafer, and the transparent SiC substrate 8 is colorless and transparent in the range of visible light. In order to reflect back the downwardly transmitted light, a metal reflective layer 9 is also provided on the bottom surface of the substrate 8 .

[0030] The conductive n-type 6H-SiC single crystal is green due to the presence of impurity ions. There is a strong absorption in the visible light band, as shown in the absorption spectrum of the 6H-SiC single crystal sub...

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Abstract

The provided LED prepared on SiC substrate comprises: from top to bottom, a p-type AlInGaN layer with an anode, a luminous layer, a n-type AlInGaN layer with a cathode, and the clear transparent SiC monocrystal substrate with background carrier concentration less than 1X1016 / cm3 and resistivity over 103Omega. cm. this invention improves LED luminous efficiency, and fit to prepare heavy-power device.

Description

technical field [0001] The invention relates to a light emitting diode and belongs to the technical field of light emitting diode optoelectronics. Background technique [0002] Light Emitting Diode (LED: Light Emitting Diode) is a light source that directly converts electrical energy into light energy by using the electroluminescent properties of semiconductor materials. Compared with traditional incandescent lamps, it has many advantages such as high efficiency, energy saving, and environmental protection, and is called the green light source of the 21st century. [0003] 40 years ago, GaAsP epitaxial growth technology was used to make the first practical LED, which could only provide red light, and soon orange and yellow-green LEDs came out one after another. In the early stage of development, the luminous efficiency of LED is relatively small, and it is mainly used in areas with low brightness requirements such as indoor indicator lights and digital tubes. In 1991, the ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/04H01L33/10
Inventor 徐现刚宁丽娜李树强胡小波蒋民华
Owner SHANDONG UNIV
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