LED

Abstract

Quadreple epitaxial layer composed of first material layer, luminous layer and second material layer is formed on a semiconductor base plate. A euphotic base plate is fixed on surface of the second martial layer. With semiconductor base plate being removed, isolation groove and first extend groove are made under undersurface of first material to penetrate the first material layer and extend to part of volume of second material layer at least. First extend electrode is setup inside first extend groove. The first extend electrode is possible to connect with first electrode positioned at partial surface of the first material layer. Thus, the first electrode is located in nearly same level position to second electrode, which is on surface of other part of the first martial layer in order to carry out next processing easily. The invention increases luminescence are of PN interface, raises luminescence brightness and service life.

Description

technical field [0001] The invention relates to a light-emitting diode, especially a planar light-emitting diode that can be applied to a quaternary extension layer, which not only facilitates the subsequent manufacturing process, but also increases the luminous area of ​​the PN interface, thereby improving the luminous brightness and service life. Background technique [0002] Light-Emitting Diode (LED; Light-Emitting Diode) has been widely used in Indicator lights, advertising billboards, traffic lights, car lights, display panels, communication appliances, consumer electronics and other products. [0003] Existing light-emitting diodes, such as light-emitting diodes with quaternary epitaxial (epitaxy) layers, such as figure 1 As shown, the light-emitting component 10 mainly forms an epitaxial layer 13 on a semiconductor substrate 11 (such as a GaAs substrate), and the epitaxial layer 13 is formed by at least a first material layer 131, a light-emitting layer 132 and a s...

AI Technical Summary

Problems solved by technology

[0008] For the placement of the first electrode 27, part of the epitaxial layer 235 must be removed, which will lose part of the luminescent area and reduce the luminous brightness

[0009] For the placement of the first electrode 27, part of the epitaxial layer 235 must be removed, which will cause the first electrode 27 and the second electrode 25 to be not at the same horizontal position, and relatively increase the difficulty in subsequent manufacturing.

[0010] Since part of the luminescent layer 132 will be removed, its luminescent area will be squeezed, so the high temperature will be easily concentrated in a certain area, which will relatively reduce the service life of its luminescent components

[0011] Since the transparent substrates of different materials are directly epitaxial or fixed on an epitaxial layer by means of an adhesive layer, not only the manufacturing process is cumbersome, but also the production yield will be reduced.

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