LED
A technology of light-emitting diodes and diodes, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of loss of light-emitting area, difficulty in manufacturing, and not in the same horizontal position
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[0071] Please refer to FIG. 3A to FIG. 3C , which are structural cross-sectional views of a preferred embodiment of the light-emitting diode of the present invention in each manufacturing step; as shown in the figure, the manufacturing of the present invention mainly includes the following steps:
[0072] First, a semiconductor substrate 31 is provided, such as a GaAs substrate (light-absorbing substrate), and a first material layer 331 (such as an N-type or P-type cladding layer), a light-emitting layer 332 and a second material layer are sequentially grown on the upper surface of the GaAs substrate 31. The material layer 333 (such as a P-type or N-type cladding layer), so as to form a quaternary epitaxial layer 33, as shown in FIG. 3A.
[0073] Wherein, the light-emitting layer 332 can be a PN interface, and can be optionally made of a ternary or quaternary compound, such as aluminum gallium arsenide (AlGaAs), aluminum gallium indium phosphide (AlGaInP) or aluminum gallium ph...
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