85results about How to "Suppress parasitic capacitance" patented technology

In order to provide an active matrix display device in which parasitic capacitance or the like is suppressed by forming a thick insulating film around an organic semiconductor film and disconnection or the like does not occur in the opposing electrode formed on the upper layer of the thick insulating film, in an active matrix display device, first, a bank layer composed of a resist film is formed along data lines and scanning lines, and by depositing an opposing electrode of a thin film luminescent element on the upper layer side of the bank layer, capacitance that parasitizes the data lines can be suppressed. Additionally, a discontinuities portion is formed in the bank layer. Since the discontinuities portion is a planar section which does not have a step due to the bank layer, disconnection of the opposing electrode does not occur at this section. When an organic semiconductor film is formed by an ink jet process, a liquid material discharged from an ink jet head is blocked by the bank layer.

An elastic member made of a metallic conductor is installed inside a main body. A contact head made of a conductor is pressed by a force exerted from the elastic member against an object to be contacted. The contact head is connected to a wire constituting a part of an electric conduction path. An insulator for breaking electric continuity between the elastic member and the contact head is inserted between the elastic member and the contact head. In addition to establishing electrical continuity with the object to be contacted using the wire and the contact head rather than the elastic member, the elastic member is insulated from the contact head and placed apart from the contact head to suppress parasitic capacitance between the elastic member and the contact head.

A head rest device that improves reliability of detecting a head on the basis of a change in capacitance without complicating a wiring structure. A head rest device is provided with a head rest rear portion configured to be supported to a seat back, and a head rest front portion freely moving forward and backward between a fully-closed position coming close to the head rest rear portion and a fully-open position separated from the head rest rear portion. The head rest front portion is moved by an actuator. The head rest front portion has a sensor electrode structured such that its capacitance is changed as a head of an occupant approaches, and an ECU controlling the actuator so as to move the head rest front portion and detecting the approach of the head of the occupant on the basis of a change of the capacitance of the sensor electrode thereon.

A light-emitting device includes a drive transistor for controlling the quantity of current supplied to a light-emitting element, a capacitor element electrically connected to a gate electrode of the drive transistor, and an electrical continuity portion for electrically connecting the drive transistor and the light-emitting element, these elements being disposed on a substrate. The electrical continuity portion is disposed on the side opposite to the capacitor element with the drive transistor disposed therebetween.

A field-effect transistor (FET) in which a gate electrode is located between a source electrode formed on one side of the gate electrode and a drain electrode formed on the other side, a source ohmic contact is formed under the source electrode and a drain ohmic contact is formed under the drain electrode. In the FET, the rise in the channel temperature is suppressed, the parasitic capacitance with a substrate is decreased, and the temperature dependence of drain efficiency is reduced, so that highly efficient operation can be achieved at high temperatures. The drain electrode is divided into a plurality of drain sub-electrodes spaced from each other and an insulating region is formed between the drain ohmic contacts formed under the drain sub-electrodes.

The invention discloses a touch display device. The touch display device comprises a display panel, a touch panel, a transparent conducting layer and a conductive adhesive layer, wherein the touch panel is configured on the display panel and comprises a cover base plate, a touch element and a shield conducting ring, the touch element is configured on the cover base plate and located between the display panel and the cover base plate, the shield conducting ring is configured on the cover base plate and located between the display panel and the cover base plate, the shield conducting ring surrounds the touch element, the transparent conducting layer is configured on the display panel and located between the display panel and the touch panel, the conductive adhesive layer is configured between the display panel and the touch panel, and the shield conducting ring is electrically connected with the transparent conducting layer through the conductive adhesive layer.

A semiconductor memory device includes a semiconductor substrate. An inter-layer dielectric is disposed on the semiconductor substrate. A bit line is disposed on the inter-layer dielectric. A bit line spacer is fabricated of a nitride layer containing boron and / or carbon and covers sidewalls of the bit line. A method of fabricating the semiconductor memory device is also provided.

The present invention provides a reflective sheet for improving display quality, a backlight unit including the reflective sheet, and a display device including the backlight unit. The reflective sheet includes a reflective layer and a heat dissipation layer. The reflective layer reflects light provided from the light source. The heat dissipation layer is in contact with the reflection layer to dissipate heat generated from the light source. The heat dissipation layer insulates the light source from the accommodating member to suppress leakage current of the power supply.

A method for manufacturing a semiconductor device is disclosed, which reduces a step difference between a peripheral region and a cell region. In the semiconductor device, a metal contact of the peripheral region is configured in a multi-layered structure. Prior to forming a bit line and a storage node contact in the cell region, a contact and a line are formed in the peripheral region, such that a step difference between the cell region and the peripheral region is reduced, resulting in a reduction in parasitic capacitance between lines.

The level of a storage capacitor line is changed between two types, an H level and an L level. As a result of this change, the voltage applied to a liquid crystal is shifted so that a sufficient voltage is applied to the liquid crystal to perform a display operation. Then, at least one of two voltage levels of the storage capacitor line is used in common with the potential of at least one of plurality of voltage levels which are used in vertical driver which drives the said selection line. Furthermore, the values of the storage capacitance and parasitic capacitance for the storage capacitor line are set within a specific range.

A passenger seat device includes a detector electrode for detecting occupancy of the seat, a seat heater powered by an on-board electric power source, and a waterproof sheet for preventing water permeated into the seat from reaching the seat heater. Whether the seat is occupied or not is detected based on changes in an impedance coupled to the detector electrode. The impedance is affected by the water if it reaches the seat heater, and a sensitivity of the occupancy detection is adversely affected. A shielding electrode insulated from the detector electrode and disposed between the detector electrode and the seat heater may be provided to reduce an amount of parasitic capacitance formed between the detector electrode and the seat heater. An alternating voltage may be supplied to the detector electrode and the shielding electrode.