The invention discloses a double-gate vacuum field emission
triode structure and a preparation method thereof, and belongs to the field of
information technology and the field of vacuum microelectronic devices. The
triode structure includes a
bottom gate, a
bottom gate insulating layer, source and drain electrodes, a conductive film, a top gate insulating layer, a top gate, and a nano-scale vacuum channel. The double-gate vacuum field emission
triode can realize the double-
gate control of a device current, enhances the
gate voltage control capability and the modulation flexibility of the device, and achieve good
electron emission performance. The top of the vacuum channel is covered with the top gate insulating layer and the top gate such that the collision
scattering effect of atmospheric particles on electrons is reduced during
electron transport. Thus, the device can work directly in the atmospheric environment and has good
electron transport performance. The vacuum channel prepared by the method has a nano-
scale size and good uniformity, and contributes to the large-scale and low-cost preparation of the device.