A dynamic matrix display device in which each pixel has a top gate type TFT, an auxiliary capacitor Csc, and a liquid crystal capacitor C1c in a pixel portion, the first electrode (30) of the auxiliary capacitor Csc is also used by the TFTp-Si active layer (14), and the second 2. The electrode (32) is formed on the lower layer of the active layer (14) and holds the insulating layer (12) therebetween so as to overlap at least a part of the active layer (14). In the case of a built-in driving part, the driving part TFT and the pixel part TFT are both of the top gate type, and the active layer (140) and the active layer (14) are made of the same material, and an insulating layer is provided under the active layer (140). (12) and a conductive layer (32D) made of the same material as the second electrode (32). In the pixel part, the reduction of the aperture ratio will be prevented and the auxiliary capacitance will be formed at the same time, and the polycrystallization annealing conditions of the active layer can be the same through the TFT in the pixel part and the TFT in the driving part, and TFTs with consistent characteristics can be obtained.