Product
Patsnap Eureka
For R&D, Patsnap Eureka makes reading and utilizing patents & technical documents easy.
Patsnap Eureka AIR
Designed for self-driven R&D workflows. Generate viable solutions, solve complex R&D challenges, empower your innovation with AI.
Patsnap Eureka Materials
Designed for material experts only. Revolutionize your material R&D, from search, analyze, to developing new materials.
Feature
TechResearch
Generate reliable direction feasibility study reports for your R&D in just a few steps.
TechSeek
Discover and master advanced knowledge NOW. Basics, ideas, possibilities, all at once.
TechMind
As an expert in R&D Theories, TechMind can generates customized viable solutions instantly.
TechRisk
Analyze your overall solution with one click, know your potential R&D risks in advance.
TechMonitor
Get weekly tech updates, stay abreast of the latest tech innovations and key insights.
Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
6406 results about "Pellicle membrane" patented technology
Efficacy Topic
Property
Owner
Technical Advancement
Application Domain
Technology Topic
Technology Field Word
Patent Country/Region
Patent Type
Patent Status
Application Year
Inventor
Pellicle (biology), a thin layer supporting the cell membrane in various protozoa. Pellicle mirror, a thin plastic membrane which may be used as a beam splitter or protective cover in optical systems.
Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
ActiveUS7402506B2NanoinformaticsSemiconductor/solid-state device manufacturingSemiconductor materialsZinc
A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
Owner:EASTMAN KODAK CO
Luminous lamp having an ultraviolet filtering and explosion proof thin film
InactiveUS7394190B2Reduce accidentsImprove efficiencyIncadescent screens/filtersDischarge tube luminescnet screensPhosphorEffect light
A luminous lamp having an ultraviolet filtering and explosion-proof thin film is disclosed. An outside of a lamp is coated by a transparent layer which comprises phosphor powder. Energy generated by the lamp is absorbed by the phosphor powder while the lamp is shining. The phosphor powder would release energy to shot brilliance, so as to provide auxiliary lighting after turning off the lamp. Additionally, the phosphor powder can absorb harmful ultraviolet and other harmful radiations with shorter wavelengths to be one part of the thin film for filtering harmful radiations. The harmful ultraviolet can be transformed by the phosphor powder into visible light to red shift radiations with short wavelengths; hence the harmful radiations with shorter wavelengths can be eliminated. The illumination of visible light can be further increased. The transparent layer can catch broken fragments of the outside of the lamp to decrease accidents when the lamp is broken.
Owner:NANOFORCE TECH CORP
Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same
InactiveUS6645830B2Improve reliabilityReduce adhesionSolid-state devicesSemiconductor/solid-state device manufacturingLiquid-crystal displayPellicle membrane
A method for transferring a thin film device on a substrate onto a transfer member, includes a step for forming a separation layer on the substrate, a step for forming a transferred layer including the thin film device on the separation layer, a step for adhering the transferred layer including the thin film device to the transfer member with an adhesive layer therebetween, a step for irradiating the separation layer with light so as to form internal and / or interfacial exfoliation of the separation layer, and a step for detaching the substrate from the separation layer.
Owner:SAMSUNG ELECTRONICS CO LTD
Formation of discontinuous films during an imprint lithography process
ActiveUS6932934B2Low viscosityMaterial nanotechnologyDecorative surface effectsLithography processLithographic artist
The present invention is directed to methods for patterning a substrate by imprint lithography. An imprint lithography method includes placing a curable liquid on a substrate. A template may be contacted with the curable liquid. Surface forces at the interface of the curable liquid and the template cause the curable liquid to gather in an area defined by a lower surface of the template. Alternately, the curable liquid may fill one or more relatively shallow recesses in the template and the area under the template lower surface. Activating light is applied to the curable liquid to form a patterned layer on the substrate.
Owner:CANON KK
Method for critical dimension shrink using conformal pecvd films
InactiveUS20090286402A1Critical dimension reductionGood step coverageSemiconductor/solid-state device manufacturingLithographic artistAnisotropic etching
A method and apparatus for forming narrow vias in a substrate is provided. A pattern recess is etched into a substrate by conventional lithography. A thin conformal layer is formed over the surface of the substrate, including the sidewalls and bottom of the pattern recess. The thickness of the conformal layer reduces the effective width of the pattern recess. The conformal layer is removed from the bottom of the pattern recess by anisotropic etching to expose the substrate beneath. The substrate is then etched using the conformal layer covering the sidewalls of the pattern recess as a mask. The conformal layer is then removed using a wet etchant.
Owner:APPLIED MATERIALS INC
Process for producing semiconductor article
InactiveUS6534382B1Guaranteed high speed operationReduce power consumptionSemiconductor/solid-state device testing/measurementFinal product manufacturePorous semiconductorsSemiconductor
A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.
Owner:CANON KK
Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
InactiveUS20040110856A1Reduce pressureReduce the temperatureNanostructure manufactureDecorative surface effectsCross-linkVitrification
A method of forming features on substrates by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on a substrate to form a liquid film thereon; and then either: (c) curing the liquid film by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film, the polymer film having a glass transition temperature (Tg); and imprinting the polymer film with a mold having a desired pattern to form a corresponding negative pattern in the polymer film, or (d) imprinting the liquid film with the mold and curing it to form the polymer film. The temperature of imprinting is as little as 10° C. above the Tg, or even less if the film is in the liquid state. The pressure of the imprinting can be within the range of 100 to 500 psi.
Owner:HEWLETT PACKARD DEV CO LP
Film deposition apparatus
InactiveUS20100116209A1Eliminate the problemSemiconductor/solid-state device manufacturingChemical vapor deposition coatingEngineeringGas supply
A film deposition apparatus including a rotational member is rotated by a rotation mechanism around a vertical axis inside a chamber, a pedestal in the chamber and including substrate receiving areas formed along a circle having the vertical axis as a center, and first and second reaction gas supplying parts provided separately along a circumferential direction of the circle and supplying first and second reaction gases to the pedestal, a separating area in the rotational member and between first and second process areas to which first and second reaction gases are supplied, an evacuation port to evacuate an atmosphere inside the chamber, a separation gas supplying part in the separating area for supplying a separation gas, and an opposing surface part in the separating area on both sides of the separation gas supplying part and at a position forming a thin space between the opposing surface part and the pedestal.
Owner:TOKYO ELECTRON LTD
Mask pattern forming method, fine pattern forming method, and film deposition apparatus
ActiveUS20100081094A1Low costOptimizationElectric discharge tubesSemiconductor/solid-state device manufacturingResistEngineering
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
Owner:TOKYO ELECTRON LTD
Method of reforming insulating film deposited on substrate with recess pattern
ActiveUS10283353B2Improve propertiesHigh puritySemiconductor/solid-state device manufacturingAtmosphereMetal
A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and / or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.
Owner:ASM IP HLDG BV
Active matrix electro-luminescent display thin film transistor
InactiveUS6239470B1Improve performanceSolve the real problemTransistorSemiconductor/solid-state device detailsCapacitanceActive matrix
A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.
Owner:SEMICON ENERGY LAB CO LTD
Vapor deposition reactor for forming thin film
InactiveUS8470718B2Improve area efficiencyArea minimizationSemiconductor/solid-state device manufacturingChemical vapor deposition coatingEngineeringRelative motion
A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.
Owner:VEECO ALD
Oxynitride laminate "blocking layer" for thin film semiconductor devices
Channel doping is an effective method for controlling Vth, but if Vth shifts to the order of -4 to -3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vth of both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH4, NH3, and N2O, and a silicon oxynitride film (B)manufactured from SiH4and N2O. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.
Owner:SEMICON ENERGY LAB CO LTD
Electrophoretic deposition and reduction of graphene oxide to make graphene film coatings and electrode structures
Owner:RUOFF RODNEY S +4
Display device and manufacturing method thereof
InactiveUS20080308807A1Inhibition of mobilityReduce oxidationSolid-state devicesSemiconductor/solid-state device manufacturingDisplay deviceEngineering
It is an object to provide a manufacturing method by which display devices can be manufactured in quantity without degrading the characteristics of thin film transistors. In a display device including a thin film transistor in which a microcrystalline semiconductor film, a gate insulating film in contact with the microcrystalline semiconductor film, and a gate electrode overlap with each other, an antioxidant film is formed on a surface of the microcrystalline semiconductor film. The antioxidant film on the surface of the microcrystalline semiconductor film can prevent a surface of a microcrystal grain from being oxidized, thereby preventing the mobility of the thin film transistor from decreasing.
Owner:SEMICON ENERGY LAB CO LTD
Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor
ActiveUS20070241327A1Vacuum evaporation coatingSemiconductor/solid-state device manufacturingOptoelectronicsFilm structure
Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.
Owner:SAMSUNG ELECTRONICS CO LTD
Thin film battery and electrolyte therefor
A solid amorphous electrolyte composition for a thin-film battery. The electrolyte composition includes a lithium phosphorus oxynitride material containing a sulfide ion dopant wherein the atomic ratio of sulfide ion to phosphorus ion (S / P) in the electrolyte ranges greater than 0 up to about 0.2. The composition is represented by the formula: where 2x+3y+2z=5+w, x ranges from about 3.2 to about 3.8, y ranges from about 0.13 to about 0.46, z ranges from greater than zero up to about 0.2, and w ranges from about 2.9 to about 3.3. Thin-film batteries containing the sulfide doped lithium oxynitride electrolyte are capable of delivering more power and energy than thin-film batteries containing electrolytes without sulfide doping.
Owner:OAK RIDGE MICRO ENERGY
Thin-film solar cell fabricated on a flexible metallic substrate
A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).
Owner:ALLIANCE FOR SUSTAINABLE ENERGY
System for the formation of a silicon thin film and a semiconductor-insulating film interface
InactiveUS6861614B1Reduced trap state densityGood reproducibilityTransistorLaser detailsSilicon thin filmState density
In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20′) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm−2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
Owner:NEC CORP +1
Semiconductor device and manufacturing method thereof
InactiveUS7119364B2Improve heat resistanceExcellent electrical propertiesFinal product manufactureElectroluminescent light sourcesHeat resistanceColor film
A high performance electric device which uses an adhesive layer over a substrate. A color filter is over a substrate, and an adhesive layer is also located over the substrate and color film. An insulating layer is over the adhesive layer, and thin film transistors cover the insulating film and the color filters. Light emitting elements cover the thin film transistors and emit light through the substrate that is through the adhesive layer and color filter. The substrate may be plastic, thus increasing the heat resistance.
Owner:SEMICON ENERGY LAB CO LTD
Method of manufacturing thin film transistor substrate
InactiveUS20080176364A1Enhance layeringImprove featuresTransistorSolid-state devicesActive layerPellicle membrane
The present invention provides a method for manufacturing a thin film transistor substrate including forming gate wires on an insulation substrate, forming oxide active layer patterns on the gate wires, forming data wires on the oxide active layer patterns so that the data wires cross the gate wires, forming a passivation film on the oxide active layer patterns and the data wires using a non-reductive reaction gas and SiH4, and forming pixel electrodes on the passivation film
Owner:SAMSUNG DISPLAY CO LTD
OLED display with composite photosensor
ActiveUS7288753B2Static indicating devicesElectroluminescent light sourcesDisplay deviceOrganic layer
An OLED display and photo-sensor is described, comprising: a substrate; a composite light sensor made up of a plurality of individual thin-film light sensitive elements located over the substrate and connected in parallel to provide a common signal; a first transparent electrode located over the composite light sensor; one or more organic layers comprising an OLED located on the transparent electrode and emitting light through the transparent electrode and to the composite light sensor; and a second electrode located on the one or more organic layers comprising an OLED. The OLED display device provides a means to measure the light output of the OLED display device while maximizing the light output and is useful in measuring incident ambient illumination.
Owner:GLOBAL OLED TECH
Transparent conductive laminated body and touch panel
InactiveUS20020158853A1High transparencyGood optical performanceConductive layers on insulating-supportsLayered productsRefractive indexTouch panel
A transparent conductive laminated body comprising a transparent dielectric substance thin film having two layers and furthermore a transparent conductive thin film being formed on one face of a transparent film substrate with thickness of 2 to 120 mum, and a transparent substrate being adhered on another face of the film substrate through a transparent pressure sensitive adhesive layer, wherein a relationship of n3<n1<=n2 <n4 is satisfied where a light index of refraction of the film substrate is defined as n1, a light indexes of refraction of the two layers of the dielectric substance thin films are defined as n2 and n3 from the film substrate side respectively, and a light index of refraction of the conductive thin film is defined as n4 is excellent in transparency and scratch-proof property of the conductive thin film, and, moreover, excellent also in flexibility. A touch panel using the transparent conductive laminated body concerned has an improved dotting property.
Owner:NITTO DENKO CORP
Near infrared absorbing film, and multi-layered panel comprising the film
InactiveUS6255031B1Optical filtersSynthetic resin layered productsNear infrared absorptionTransmittance
In a film or panel having excellent near-infrared absorbability and excellent near-infrared shieldability, and having a high degree of visible ray transmittance and good color tone, in order to produce the near-infrared-absorbing film or panel having good color tone while the near-infrared-absorbing dye disposed therein is kept stable, the dye and the binder resin for the dye are specifically selected, and the production method is also specifically selected. In addition, for the purpose of producing the film or panel while the dye disposed therein is kept stable and for the purpose of making the film or panel have additional functions such as electromagnetic radiation absorbability, the film or panel is made to have a multi-layered structure.
Owner:OSAKA GAS CO LTD
MEMS devices with unreleased thin film components
ActiveUS7012726B1Decorative surface effectsSemiconductor/solid-state device manufacturingMicroelectromechanical systemsEngineering
In one embodiment, the invention provides a MEMS device. The MEMS device comprises a plurality of functional components including at least one moveable component; and a sacrificial component to at least reduce movement of the moveable component during shipping of the microelectromechanical systems device, wherein the sacrificial component can be removed after shipping.
Owner:SNAPTRACK
Method for manufacturing semiconductor device
ActiveUS8236635B2High field-effect mobilityThin film transistorTransistorSolid-state devicesLight exposureSemiconductor
In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by dry etching in which an etching gas is used.
Owner:SEMICON ENERGY LAB CO LTD
Tunable optical instruments
InactiveUS7002697B2Diffusing elementsSpectrum generation using multiple reflectionAmorphous siliconLight beam
An optical instrument including: a thermo-optically tunable, thin film, free-space interference filter having a tunable passband which functions as a wavelength selector, the filter including a sequence of alternating layers of amorphous silicon and a dielectric material deposited one on top of the other and forming a Fabry-Perot cavity structure having: a first multi-layer thin film interference structure forming a first mirror; a thin-film spacer layer deposited on top of the first multi-layer interference structure, the thin-film spacer layer made of amorphous silicon; and a second multi-layer thin film interference structure deposited on top of the thin-film spacer layer and forming a second mirror; a lens for coupling an optical beam into the filter; an optical detector for receiving the optical beam after the optical beam has interacted with the interference filter; and circuitry for heating the thermo-optically tunable interference filter to control a location of the passband.
Owner:II VI DELAWARE INC +1
Transaction card
The present invention relates to a process for producing an opaque, transparent or translucent transaction card having multiple features, such as a holographic foil, integrated circuit chip, silver magnetic stripe with text on the magnetic stripe, opacity gradient, an invisible optically recognizable compound, a translucent signature field such that the signature on back of the card is visible from the front of the card and an active thru date on the front of the card. The invisible optically recognizable compound is an infrared ink and / or film, which can be detected by a sensor found in an ATM or card assembly line.
Owner:LIBERTY PEAK VENTURES LLC
Hard coat film, polarizing plate, and image display
ActiveUS20090214871A1Deterioration in brittlenessHigh surface hardnessMaterial nanotechnologyStarch dervative coatingsOrganic solventPolyrotaxane
A hard coat film includes a transparent plastic film substrate; and a hard coat layer, wherein the hard coat layer is formed of a composition for forming a hard coat layer, the composition containing the following component (A), component (B), and an organic solvent:Component (A): a polyrotaxane,Component (B): a monomer having two or more ethylenically unsaturated groups.
Owner:FUJIFILM CORP
Composition for Functional Coatings, Film Formed Therefrom and Method for Forming the Composition and the Film
InactiveUS20080311308A1Preservation deteriorateLow viscosityConductive materialPhotomechanical apparatusElectrochromismChrominance
The present invention relates to compositions for functional films, and more particularly to compositions for functional films such as a heat ray screening film compatible with hydrolic or alcoholic and anti-hydrolic resin binder, a near infrared screening film, a chrominance correcting film, a conductive film, a magnetic film, a ferromagnetic film, a dielectric film, a ferroelectric film, an electrochromic film, an electroluminescence film, an insulating film, a reflecting film, a reflection preventing film, a catalyst film, a photocatalyst film, a light selectively absorbing film, a hard film, and a heat resisting film, films formed therefrom, and a method of forming the compositions and the films.
Owner:LEE HAE WOOK
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com