148results about How to "Improve area efficiency" patented technology

An algorithmic analog-to-digital converter (ADC) includes a sample-and-hold circuit and an ADC processing unit operating in parallel and sharing a single operational amplifier. The ADC processing unit includes an MDAC with a switched capacitor topology and a sub-ADC. The ADC processing unit is clocked by an internal clock that is N times faster than the sample-and-hold clock. Each cycle is further sub-divided into two phases. During one phase the capacitors are coupled to a residue or sampled voltage provided by the MDAC, and during another phase the capacitor are coupled to a reference voltage determined by the switch control signals generated by the sub-ADC. A set of data bits is generated by the ADC processing unit during each ADC clock cycle. The N sets of data bits are added to generate the digital output stream.

Methods, circuits, architectures, and systems for error detection in transmitted data. The method generally includes the steps of (i) partitioning the unit of digital data into one or more full data lines and a remainder, wherein each of the full data lines comprises a predetermined number of data blocks, each of the data blocks has a first fixed length, the predetermined number is an integer of at least 2, and the remainder has a length less than the predetermined number times the first fixed length; (ii) if the remainder contains at least one data bit, adding to the remainder a padding vector having a length sufficient to generate a padded data line having the predetermined number of data blocks; and (iii) performing error checking calculations on the full data lines and the padded data line. The present invention reduces the chip area and power consumption, while improving system performance.

Methods, circuits, architectures, and systems for error detection in transmitted data. The method generally includes the steps of (a) performing an error checking calculation on the transmitted data and appended error checking code; (b) determining the calculated error checking code state; and (c) if it has a predetermined state, indicating that there is no error in the transmitted data. The circuitry generally comprises (1) an error checking code calculation circuit configured to calculate error checking code on the transmitted data and the appended error checking code; (2) a vector selector configured to select one of a plurality of error checking vectors; and (3) a logic circuit configured to determine the calculated error checking code state and, if it has a predetermined state, indicate that there is no error in the transmitted data. The software generally includes a set of instructions configured to implement or carry out the present method. The architectures and/or systems generally include those that embody one or more of the inventive concepts disclosed herein. In the present invention, an error checking calculation is performed on error checking code transmitted with the data. If the transmitted data and error checking code are error-free, the error checking calculation gives a result having a known and/or predetermined state. This technique enables one to confirm or determine that the data transmission was error-free without use of or need for a wide, complicated comparator, thereby reducing the chip area dedicated to error detection, increasing the utilization efficiency of the circuitry on the chip, and reducing power consumption.

The invention discloses an edge terminal structure of a high-voltage power semiconductor device. The edge terminal structure comprises a plurality of field limiting rings which wind the power semiconductor device and have a conduction type opposite to that of a substrate; one or two side of each field limiting ring is provided with a doped region which has a conduction type the same as that of the field limiting ring and the doping concentration smaller than that of the field limiting ring; the field limiting rings are coated with field plates; and the field limiting rings and the field plates are separated by silicon dioxide layers. The material of the field plate can be selected from copper, aluminum, polysilicon, oxygen-doped polysilicon and the like. The doped regions with lower concentration are added around the conventional field limiting rings, so the intensity of electric field lines of an edge cellular can be effectively reduced, the electric field strength borne by the edge cellular is reduced, the breakdown voltage is improved, the area efficiency of the edge terminal structure is effectively improved, the chip area is saved, and the chip cost is reduced.

Disclosed is a configurable logic circuit that includes at least 6 inputs and at least two outputs. The configurable logic element can carry out only a subset of all 6-input logic functions and, thus, requires a substantially smaller silicon area than a 6-LUT that can perform all 6-input logic functions. Also, the configurable logic circuit can be configured such that a first subset of the inputs drive one of the outputs and a second subset of the inputs drive another output.

The present invention provides a LCOS display. The display comprises a first PCB, an interface module, a first silicon chip, and a flat cable. The interface module is disposed on the first PCB and used to receive an audio and video signal. The first silicon chip comprises a display area, a processing area, and a metal layer. The display area comprises a pixel array in a LCOS panel formed on the first silicon chip. The processing area comprises a processing unit formed on the first silicon chip. The metal layer is formed on the first silicon chip for electrically connecting the display area with the processing area. The flat cable is used to electrically connect the interface module with the processing unit.

An object of the present invention is to provide a method of producing a Group III nitride semiconductor device having a chip form which is pentagonal or more highly polygonal maintaining good area efficiency and at a low cost. The inventive method of producing a Group III nitride semiconductor device having a chip shape which is a pentagonal or more highly polygonal shape comprises a first step of epitaxially growing a Group III nitride semiconductor on a substrate to form a semiconductor wafer; a second step of irradiating said semiconductor wafer with a laser beam to form separation grooves; a third step of grinding and/or polishing the main surface side differently from the epitaxially grown main surface of the substrate; and a fourth step of division into individual chips by applying stress to said separation grooves.

The present invention describes systems and method for driving wordlines of memory devices. Some embodiments include a selection signal driver to generate a selection signal responsive to a first wordline signal, a main wordline driver to generate a main wordline signal responsive to a second wordline signal, the selection signal corresponding to one of the power supply voltage and the ground voltage and the main wordline signal corresponding to the other one of the power supply voltage and the ground voltage, and a sub-wordline driver to generate a sub-wordline signal responsive to the main wordline signal, the sub-wordline signal having a voltage level corresponding to the selection signal or a low voltage.

A semiconductor device includes: a plurality of external terminals; a plurality of semiconductor substrates that are layered; a through electrode penetrating through at least one of the semiconductor substrates and electrically connected with any of the external terminals; and a plurality of electrostatic discharge protection circuits provided on any one of the semiconductor substrates. In the device, the through electrode is electrically connected with the plurality of electrostatic discharge protection circuits.