622results about How to "Easy to deposit" patented technology

A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

A portable communication device is used in a digital money system so as to pay for purchase by digital money by using the portable communication device. A remote communication interface interfaces radio-frequency communication with a remote communication terminal. A short-distance communication interface interfaces wireless communication with a communication terminal located in the vicinity of the portable communication device. Data or instruction information is input to the portable communication terminal by an inputting unit such as a key panel. The data is stored in a memory and is displayed on a display unit such as an LCD. An enciphering and deciphering circuit enciphers or deciphers the data to be transmitted or received so as to maintain security.

A coating material for a component intended for use in a hostile thermal environment. The coating material has a cubic microstructure and consists essentially of either zirconia stabilized by dysprosia, erbia, gadolinium oxide, neodymia, samarium oxide or ytterbia, or hafnia stabilized by dysprosia, gadolinium oxide, samarium oxide, yttria or ytterbia. Up to five weight percent yttria may be added to the coating material.

This invention discloses semiconductor power device disposed on a semiconductor substrate of a first conductivity type. The semiconductor substrate supports an epitaxial layer of a second conductivity type thereon wherein the semiconductor power device is supported on a super-junction structure. The super-junction structure comprises a plurality of trenches opened from a top surface in the epitaxial layer; wherein each of the trenches having trench sidewalls covered with a first epitaxial layer of the first conductivity type to counter charge the epitaxial layer of the second conductivity type. A second epitaxial layer may be grown over the first epitaxial layer. Each of the trenches is filled with a non-doped dielectric material in a remaining trench gap space. Each of the trench sidewalls is opened with a tilted angle to form converging U-shaped trenches.

Conformal filter cartridges, filtering apparatus using the conformal filter cartridges, and methods of manufacturing the conformal filter cartridges are disclosed. The conformal filter cartridges may include a bed of filter material between a pair of support plates, wherein the major surfaces of the support plates facing the bed of filter material are each curved about at least one axis. The curvature imparted by the support plates provides the conformal configuration to the filter cartridge. The bed of filter material may be loose particulate filter material that may be retained under residual compression between the support plates within the filter cartridge.

A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

A light-weight composite material with enhanced structural characteristics includes, in one embodiment, a compositionally modulated nanolaminate coating electrically deposited into an open, accessible void structure of a porous substrate. As a result of including a nanolaminate within the void structure, the composite can include a greater amount of nanolaminate material per unit volume than can be achieved by depositing a nanolaminate material solely on a two-dimensional surface. In addition, the nanolaminate material as well as other material electrodeposited to form the composite is compositionally modulated so that discontinuities between layers are minimized and potentially eliminated. The light-weight but structurally enhanced composite material can be used in a number of different applications including, but not limited to, ballistic applications (e.g., armor panels or tank panels), automotive protection applications (e.g., car door panels, racing shells) and sporting equipment applications (e.g., golf club shafts and tennis racket frames).

A method for fabrication of a solder bump, comprising applying preferably an insulating film, followed by applying a multilayer underbump metallization, a layer of a photoresist, and a thin layer of titanium on a substrate containing, preferably, III-V semiconductor circuits. The multilayer UBM pad, preferably comprising a 0.02 to 0.05 micrometer thick layer of titanium, a 0.5 to 1.0 micrometer thick layer of nickel and a 0.1 to 0.2 thick layer of gold. The protective film with the thickness of preferably 0.5 to 40 micrometer comprises a photoresist. After the solder has been electroplated, the protective film is removed, preferably by dry etching or with a solvent. The titanium film serves a dual function of being a membrane for electroplating of the solder and of being a non-wettable dam for wetting back of the plated solder. The titanium film with the thickness of 200 to 1,000 Angstroms is preferably deposited by evaporation. After the solder has been electroplated, much of the titanium film is removed, preferably by wet etching or dry etching, leaving only a band of titanium that surrounds the disk of solder. A multilayer solder bump structure for III-V semiconductor circuits manufactured using this method, comprising, preferably, an insulating film, a multilayer underbump metallization layer, and remnants of the thin titanium film.

The invention discloses a liquid nitrogen container and a cryogenic vial pick-and-place device. The liquid nitrogen container comprises a container body, and further comprises a rotary disc, a cryopreservation frame, a central shaft and a driving assembly, wherein an opening is formed in the container body; the rotary disc is arranged in the container body; the cryopreservation frame is supported by the rotary disc and comprises a plurality of layers of placement faces; the included angle between each placement face layer and the rotary disc is 40-60 degrees; the central shaft is perpendicularly arranged with and fixedly connected with the rotary disc; the driving assembly is electrically connected with the central shaft and used for driving the central shaft to rotate; and the central shaft is used for driving the cryopreservation frame to rotate through the rotary disc to reach the opening of the container body. By adoption of the liquid nitrogen container and the cryogenic vial pick-and-place device, the workload of operating personnel is reduced, the error rate of manual picking of cryogenic vials is lowered, and the potential safety hazard for the operating personnel is avoided. The liquid nitrogen container and the cryogenic vial pick-and-place device are particularly suitable for the work of picking cryogenic vials in a high-capacity biological sample bank, and meet the technical requirement for storage in the high-capacity biological sample bank.

Osmolarity measurement of a sample fluid, such as tear film, is achieved by depositing an aliquot-sized sample on a sample receiving substrate. The sample fluid is placed on a sample region of the substrate. Energy is imparted to the sample fluid and energy properties of the fluid can be detected to produce a sample fluid reading that indicates osmolarity of the sample fluid. An aliquot-sized volume can comprise, for example, a volume of no more than 20 microliters (μL). The aliquot-sized sample volume can be quickly and easily obtained, even from dry eye sufferers. The imparted energy can comprise electrical, optical or thermal energy. In the case of electrical energy, the energy property of the sample fluid can comprise electrical conductivity. In the case of optical energy, the energy property can comprise fluorescence. In the case of thermal energy, the measured property can be the freezing point of the sample fluid. The substrate can be packaged into a chip, such as by using semiconductor fabrication techniques. An ex vivo osmolarity sensor system that uses the chip can detect energy from the sample region and can provide an accurate osmolarity measurement without user intervention.

A thermal barrier coating (TBC) for a component intended for use in a hostile thermal environment. The TBC has an interior region and an outer surface region on and contacting the interior region. Both regions are formed of a ceramic material, with the interior region having a lower thermal conductivity than zirconia partially stabilized by about seven weight percent yttria. The interior region constitutes more than half of the thickness of the TBC, and the outer surface region constitutes less than half of the thickness of the TBC. The TBC has a columnar microstructure whereby the interior region and the outer surface region comprise columns of their ceramic materials. The outer surface region is more erosion and impact resistant than the interior region at least in part as a result of the columns thereof being more closely spaced than the columns of the interior region.

Synthetic nano-sized crystalline calcium phosphate, particularly hydroxyapatite, having a specific surface area in the range of 150 m2 / g to 300 m2 / g, is described. The nano-sized crystalline calcium phosphate may be in the form of a powder or in the form of a coating on a surface. A method of producing a nano-sized crystalline calcium phosphate powder or coating is also described. The method comprises formation of a liquid crystalline phase in a water solution of calcium, phosphor and a surfactant, placing the phase in an ammonia atmosphere so that nano-sized crystals are formed, followed by either removal of the surfactant with a solvent and recovering the nano-sized crystals to obtain the powder, or diluting the ammonia-treated liquid crystalline phase with a hydrophobic organic solvent to create a microemulsion of the nano-sized crystals in water, dipping an oxide layer-coated surface of an object into the microemulsion, or alternatively saving the step of ammonia treatment of the liquid crystalline phase until after the dipping of the surface of an object into the microemulsion, followed by removal of the organic solvent and the surfactant from the surface to obtain the coating.

The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.

A massage device of the present invention includes a base cover; a guiding device, wherein the guide device comprising a plurality of guiding rails positioned in a middle of the base cover; and a moving base, which suspending above the guiding device; wherein the moving base comprising a bottom and a shield covered thereon to form a compartment; the moving base is mounted on the guiding device in a sleeve form. The moving base comprising power equipment mounted between the bottom and the shield, transmission system and massage system mounted on the shield.

The present invention is a security mailbox utilizing a combination package rest and security panel. A mail slot in the security panel prevents easy access to contents of the mailbox. The present invention may be utilized in situations other than mail delivery where security for contents is desired.

Disclosed is a semiconductor device including plural types of semiconductor elements having structures that have respective thicknesses suitable for their uses formed in the same process. A semiconductor device (100) includes a TFT (40) and a photodiode (50). A gate electrode (110) of the TFT (40) and a light-shielding layer (60) of the photodiode (50) are formed in the same process. However, because the film thickness of the gate electrode (110) is small, the breakage of an island-shaped silicon layer (120), which will be the channel layer, at the edge of the gate electrode (110) can be prevented. Also, because the film thickness of the light-shielding layer (60) is large, the light entering through a surface of a glass substrate (101) on the side opposite from the surface on which the TFT is formed can be reliably blocked by the light-shielding layer (60). Consequently, the detection sensitivity of the photodiode (50) can be increased.

The invention disclosed herein provides an apparatus and method for securely collecting, storing, and disposing of documents by attaching a reusable, secure, lockable closure to a cardboard receptacle box. The lockable closure has a slot in the top to allow documents to be deposited in the box. Two opposing side surfaces of the lockable closure have an interior lip that engages the box flap in such a way as to prevent the unwanted removal of the closure. The closure can be secured to the box with a locking seal such as a cable tie through locking holes located on the top surface and two opposing sides of the lockable closure as well as the box flaps and box sides. A hole allows removal of the lockable closure by exerting pressure on the flap. The disclosed method provides the steps of providing a single lockable closure, a plurality of receptacle boxes, and a number of locking seals capable of fitting through the holes. The single, reusable, locking closure is placed on a receptacle box, which is sealed, documents are placed into the box through the slot. When the box is full, the locking seals are removed and the box is closed secured with its internal flaps and shipped for destruction or recycling. The same lockable closure is then placed on a different box bottom to repeat the process.

The invention disclosed herein provides an apparatus and method for securely collecting, storing, and disposing of documents by attaching a reusable, secure, lockable closure to a cardboard receptacle box. The lockable closure has a slot in the top to allow documents to be deposited in the box. Two opposing side surfaces of the lockable closure have an interior lip that engages the box flap in such a way as to prevent the unwanted removal of the closure. The closure can be secured to the box with a locking seal such as a cable tie through locking holes located on the top surface and two opposing sides of the lockable closure as well as the box flaps and box sides. A hole allows removal of the lockable closure by exerting pressure on the flap. The disclosed method provides the steps of providing a single lockable closure, a plurality of receptacle boxes, and a number of locking seals capable of fitting through the holes. The single, reusable, locking closure is placed on a receptacle box, which is sealed, documents are placed into the box through the slot. When the box is full, the locking seals are removed and the box is closed secured with its internal flaps and shipped for destruction or recycling. The same lockable closure is then placed on a different box bottom to repeat the process.

A rechargable magnesium battery having an non-aqueous electrolyte is provided. The properties of the electrolyte include high conductivity, high Coulombic efficiency, and an electrochemical window that can exceed 3.5 V vs. Mg / Mg+2. The use of the electrolyte promotes the electrochemical deposition and dissolution of Mg without the use of any Grignard reagents, other organometallic materials, tetraphenyl borate, or tetrachloroaluminate derived anions. Other Mg-containing electrolyte systems that are expected to be suitable for use in secondary batteries are also described.

A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.

The present invention relates to an anti-friction and anti-wear liquid coating composition for use with parts made of materials that have softening points below about 300° F. and articles so coated. The present invention also relates to a method of coating parts made from a low softening point materials with an anti-friction and anti-wear hard coating composition. The coating composition comprises a mixture of (i) solid lubricants comprising boron nitride, graphite and molybdenum disulfide, (ii) a thermoset resin system, (iii) catalyst for curing the resin system and (iv) a solvent system comprising highly volatile solvents. The coating composition is applied to the part and cured to form a coating on the part.

The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition / condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.

[Object] To provide a dustproof, antifouling, and highly durable composite material.[Solving Means] An inorganic fine particle layer containing inorganic fine particles and a binder component is formed on a surface of a substrate by chemical bonding. The inorganic fine particles are coated with silane monomer each having an unsaturated bond. The content of the binder component is in the range of 0.1% by mass to 40% by mass to the content of the inorganic fine particles.

Disclosed are processes for preparing articles having anti-fog properties, comprising providing a substrate having at least one main surface coated with an intermediate coating obtained by applying and at least partially curing an intermediate coating composition comprising at least one monoepoxysilane and / or an hydrolyzate thereof and at least one polyepoxy monomer comprising at least two epoxy groups, forming onto said intermediate coating at least one bi-layer, and curing said at least one bi-layer by heating at a temperature of 150° C. or less at atmospheric pressure and in the absence of added water steam. Also disclosed are articles made and / or makeable by these processes.

A metal-insulator-metal (MIM) capacitor of a semiconductor device, and a manufacturing method thereof, includes a lower electrode formed of a refractory metal or a conductive compound including the refractory metal, a dielectric film formed of a high dielectric material, and an upper electrode formed of a platinum-family metal or a platinum-family metal oxide. Accordingly, the MIM capacitor satisfies the criteria of step coverage, electrical characteristics and manufacturing costs, as compared to a conventional MIM capacitor in which the upper and lower electrodes are formed of the same material such as a platinum-family metal, a refractory metal or a conductive compound including the refractory metal. The capacitor is especially suitable for mass production in semiconductor fabrication processes.

A heat exchanger includes a corrugated metal sheet comprising a first side having a plurality of first troughs alternating with a plurality of first peaks, and a second side having a plurality of second troughs alternating with a plurality of second peaks, each trough being formed by a pair of walls, each wall separating the first side from the second side and extending from a first peak to a second peak, the troughs and peaks extending in parallel and defining a longitudinal direction. Each first peak is formed with at least one depression, the depressions in respective peaks being aligned to form at least one tube-receiving channel extending transversely to the longitudinal direction. Each depression has a contact surface formed in the first side and extending laterally over each adjacent first trough. A tube section is received in each tube-receiving channel in substantially conforming contact with the contact surfaces. The heat exchanger is manufactured using first and second fixtures having first and second sets of parallel ribs which are received in respective second and first troughs of the corrugated sheet. The first peaks are formed downward using a mandrel received through windows interrupting the second ribs, the depressions being formed in corresponding notches in the first ribs.

The method of the present invention is a thermal contact-bonding method employing a thermal contact-bonding apparatus including at least a hot plate, an upper chamber, and a resin sheet provided at a lower portion of the upper chamber, the method including the steps of: pressing the upper chamber against the hot plate, while at least a part of a surface of the hot plate is separated from the resin sheet, to be in a stand-by state of the thermal contact-bonding apparatus, for a time of not charging a material to be processed; charging the material to be processed between the resin sheet and the hot plate; and subjecting the material to be processed to a thermal contact-bonding processing by making a space between the resin sheet and the hot plate under a vacuum state. Thus, the present invention provides a method and an apparatus for thermally contact-bonding a surface of the material to be processed in a clean state.

A light emitting diode chip includes a substrate, an epitaxial layer, two inclined plane units, and two electrode units. The substrate has top and bottom surfaces. The epitaxial layer is disposed on the top surface of the substrate. Each of the inclined plane units is inclined downwardly and outwardly from the epitaxial layer toward the bottom surface of the substrate, and includes an inclined sidewall formed on the epitaxial layer, and a substrate inclined wall formed on the substrate. Each of the electrode units includes an electrode disposed on the epitaxial layer, and a conductive portion extending from the electrode to the substrate inclined wall along corresponding one of the inclined plane units.

The plasma processing apparatus is provided with a chamber comprising a dielectric wall at the position opposing an object to be processed. A flat coil arranged exterior of the dielectric wall creates an induction magnetic field for generating the plasma. A plate-shaped electrode capable of functioning as a Faraday shield is arranged between the flat coil and the dielectric wall. And the apparatus provide with a heating unit configured to heat the periphery of the dielectric wall. The apparatus can prevent reaction products from adhering to the periphery of a dielectric wall by increasing the periphery temperature of the dielectric wall during an etching process, and suppressing the generation of particles.