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Method for manufacturing cobalt stibium antimonide based thermoelectric device

A technology for thermoelectric devices and manufacturing methods, which is applied in the field of connection between cobalt antimonide thermoelectric materials and electrodes, and in the field of preparation of cobalt antimonide CoSb3-based thermoelectric devices. Fast speed and life-prolonging effect

Active Publication Date: 2009-08-05
中科西卡思(苏州)科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] H.H.Saber, M.S.Elgenk, T.Caillat, Tests results of skutterudite basedthernmoelectric uncouples, Energ Convers Manage, 48 (2007), etc., have not seen detailed reports for specific manufacturing processes

Method used

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  • Method for manufacturing cobalt stibium antimonide based thermoelectric device
  • Method for manufacturing cobalt stibium antimonide based thermoelectric device
  • Method for manufacturing cobalt stibium antimonide based thermoelectric device

Examples

Experimental program
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Effect test

Embodiment 1

[0028] First, a 12×12×14mm P-N thermoelectric block was prepared in a square mold, and after being turned over 90°, the two end faces perpendicular to the PN interface were roughly ground to 12×12×12mm, and then ultrasonically cleaned in ethanol. Next, Mo was plasma-sprayed on both end surfaces for about 5 seconds to form a Mo diffusion barrier layer with a thickness of about 10 μm. Put the P-N type thermoelectric block back into the square mold, put the cut Ag-Cu solder piece and Mo-Cu electrode into the mold in turn on the P-N type thermoelectric block, and perform SPS connection. The sintering pressure is 15MPa, and the heating rate is 200°C / min, keep warm at 550°C for 30 seconds, then slowly lower the temperature, the cooling rate is controlled at 100°C / min, and the welding of the high-temperature end electrode is completed. Put the P-N type thermoelectric block connected with the high-temperature electrode on the Mo layer at the low-temperature end and then vacuum sputter...

Embodiment 2

[0030] First, a P-N type thermoelectric block of 8×8×10 mm was prepared in a square mold, and after being turned over 90°, the two end faces perpendicular to the PN interface were roughly ground to 8×8×8 mm, and the same as in Example 1 Methods and conditions The P-N type thermoelectric block is treated and plasma sprayed, and the P-N type thermoelectric block is put back into the square mold, and the cut Ag-Cu soldering piece and Mo-Cu electrode are put into the mold in turn. P-N type thermoelectric block On the block, SPS connection is carried out, the sintering pressure is 20MPa, the heating rate is 250°C / min, the temperature is kept at 550°C for 45 seconds, and then the temperature is slowly lowered, and the cooling rate is controlled at 150°C / min, and the welding of the high-temperature end electrode is completed. Put the P-N type thermoelectric block connected with the high-temperature electrode on the Mo layer at the low-temperature end and then vacuum sputter a Ni layer...

Embodiment 3

[0032] First, a 6×6×8mm P-N thermoelectric block was prepared in a square mold, and after being turned over 90°, the two end faces perpendicular to the PN interface were roughly ground to 6×6×6mm, and the same as in Example 1 Methods and Conditions Treat the P-N type thermoelectric block, plasma spray W on both ends for about 5 seconds, and form a W diffusion barrier layer with a thickness of about 30 μm. Put the P-N type thermoelectric block back into the square mold, put the cut Ag-Cu solder piece and Mo-Cu electrode into the mold in turn on the P-N type thermoelectric block, and perform SPS connection. The sintering pressure is 15MPa, and the heating rate is 250°C / min, keep warm at 550°C for 60 seconds, then slowly lower the temperature, the cooling rate is controlled at 150°C / min, and the welding of the high-temperature end electrode is completed. Put the P-N type thermoelectric block connected with the high-temperature electrode on the Mo layer at the low-temperature end ...

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Abstract

The invention relates to a producing method for antimonide cobalt-based heat devices, which is characterized in that the invention first uses SPS method to produce a single pair or a plurality of pairs of hot electricity block turning 90 degrees of P-N and effectively prevents a plurality of elements of thermoelectric semiconductor from diffusing by a plasma sprayed disusing barrier thin layer on the hot electricity block, and the use of disusing barrier thin layer changes the connection between thermoelectric semiconductor and metal electrode into connection between metals to more facilitate metal electrode unit, and the application of a near-hypoeutectic Ag-Cu solder sheet not only can satisfy temperature use ranging from 500 DEG C to 600 DEG C system of high temperature end antimonide cobalt-based heat device, but also can provide a good welding material for producing other hyperthermia electric material devices, and the electrode material applies an electrode material having a similar thermal expansion coefficient with antimonide cobalt to realize heat match on a greatest degree and reduce thermal stress produced by thermal mismatch.

Description

technical field [0001] The present invention relates to cobalt antimonide CoSb 3 The preparation method of base thermoelectric device, more precisely the present invention relates to the connection method of cobalt antimonide thermoelectric material and electrode, belongs to CoSb 3 The technical field of preparation of base thermoelectric devices. Background technique [0002] Thermoelectric material is a functional material that directly converts thermal energy and electrical energy into each other. It uses its own Seebeck effect to directly convert thermal energy into electrical energy. With the increasing severity of global environmental pollution and energy crisis, the design and preparation of thermoelectric devices has received more and more attention from all over the world. Refrigeration and power generation devices made of thermoelectric materials are small in size, light in weight, without any mechanical transmission parts, noiseless in operation, and long in ser...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34H10N10/01
Inventor 陈立东赵德刚李小亚夏绪贵柏胜强周燕飞赵雪盈
Owner 中科西卡思(苏州)科技发展有限公司
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