Epitaxial growth method of W type antimonide class II quantum well

Abstract

The invention relates to an epitaxial growth method of a W type antimonide class II quantum well, which comprises the following steps: step 1) selecting a substrate; step 2) performing deoxidation and degasification treatment on the substrate, and observing the surface reconstruction; and step 3) sequentially growing a buffer layer, a W-structured class II quantum well active area with 10 cycles and a GaSb cover layer on the substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and mainly relates to a method for growing a two-type "W" type quantum well structure on a GaSb substrate. Background technique [0002] With the development of science and technology, semiconductor lasers in the mid-infrared 2-5μm band have received more and more attention. The main applications are chemical gas detection, communication, biomedicine and military electronic countermeasures. The traditional Si-based and GaAs-based materials have relatively wide band gaps and cannot meet the requirements for wavelength, while antimonide (GaSb-based) materials have relatively narrow band gaps, thus becoming the main research object in this band. At present, both in terms of materials and devices, semiconductor optoelectronic devices in the mid-infrared 2-5μm band are not mature enough. [0003] At present, there are many research directions in the mid-infrared band. In the 2-3 μm band, a cl...

AI Technical Summary

Problems solved by technology

Traditional Si-based and GaAs-based materials have relatively wide band gaps, which cannot meet the requirements for wavelengths, while antimonide (GaSb-based) materials have relatively narrow band gaps, so they have become the main research objects in this band.

At present, no matter in terms of materials or devices, semiconductor optoelectronic devices in the mid-infrared 2-5μm band are not mature enough.

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