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Polishing method for gallium antimonide monocrystal wafer

A single-wafer, gallium antimonide technology, applied in polishing compositions containing abrasives, grinding/polishing equipment, grinding/polishing safety devices, etc., can solve the problem of many operation steps, complicated polishing process, and easy introduction of surface defects and other problems, to achieve the effect of simple process, low surface roughness and good stability

Active Publication Date: 2020-12-15
WUHAN GAOXIN TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chinese patent CN106064326A provides a method for precise polishing of gallium antimonide single crystal substrates. The surface roughness is less than 0.3nm mainly through the three-step process of rough polishing, medium polishing and fine polishing. Among them, cerium oxide polishing cloth is used for rough polishing , black polyurethane polishing cloth is used for medium polishing, and black synthetic leather polishing cloth is used for fine polishing. The overall polishing process is complicated, with many operating steps, and it is easy to introduce surface defects

Method used

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  • Polishing method for gallium antimonide monocrystal wafer

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] (1) Remove the damage on the surface of the gallium antimonide single wafer; paste the gallium antimonide single wafer evenly on the ceramic carrier with quartz wax and use natural curing, wipe off the excess quartz wax with alcohol, and then pass it through the grinding machine Use 6000 mesh grinding wheel, 4000 rpm for double-sided grinding, and the removal amount is controlled to 40um.

[0034] (2) Chemical mechanical polishing: the polishing cloth is made of black synthetic leather, the length of the polishing cloth is 225um, and the aperture of the polishing cloth is 50-90um.

[0035] The polishing liquid is made by mixing the following components according to the mass percentage: 50nm SiO 2 1.2% suspended abrasive, 0.5% sodium dichloroisocyanurate, 2% sodium bicarbonate, 0.25% sodium pyrophosphate, 0.25% sodium benzenesulfonate, and the balance is deionized water.

[0036] The process parameters of the polishing process are as follows: the polishing pressure is 2...

Embodiment 2

[0040] The polishing process of the gallium antimonide single wafer provided in this embodiment is basically the same as that of the above-mentioned embodiment 1, except that the length of the polishing cloth is 350 um, and the diameter of the polishing cloth is 30-70 um.

[0041] The polishing liquid is made by mixing the following components according to the mass percentage: 50nm SiO 2 1.2% suspended abrasive, 0.25% sodium dichloroisocyanurate, 2% sodium bicarbonate, 0.25% sodium pyrophosphate, 0.25% sodium benzenesulfonate, and the balance is deionized water.

[0042] The process parameters of the polishing process are as follows: the polishing pressure is 200g / cm 2 , the polishing speed is 40-100 rpm, the flow rate of the polishing liquid is 30mL / min, and the polishing time is 50min.

Embodiment 3

[0044] The polishing process of the gallium antimonide single wafer provided in this embodiment is basically the same as that of the above-mentioned embodiment 1, except that the length of the polishing cloth is 225um, and the diameter of the polishing cloth is 50-90um.

[0045] The polishing liquid is made by mixing the following components according to the mass percentage: 50nm SiO 2 1.2% suspended abrasive, 0.25% sodium dichloroisocyanurate, 2% sodium bicarbonate, 0.25% sodium pyrophosphate, 0.25% sodium benzenesulfonate, and the balance is deionized water.

[0046] The process parameters of the polishing process are as follows: the polishing pressure is 200g / cm 2 , the polishing speed is 70 rpm, the flow rate of the polishing solution is 30mL / min, and the polishing time is 50min.

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Abstract

The invention provides a polishing method for a gallium antimonide monocrystal wafer. The polishing method comprises the following step (1) of grinding both sides of the gallium antimonide monocrystalwafer to remove damage from the surface of the gallium antimonide monocrystal wafer; the step (2) of chemically and mechanically polishing the ground gallium antimonide monocrystal wafer by using polishing cloth coordinated with polishing solutions; and the step (3) of taking and cleaning the gallium antimonide monocrystal wafer after chemical mechanical polishing. According to the polishing method, through selection and optimization of the components and content of the polishing solutions, and the polishing cloth coordinated with the polishing solutions, one-step forming of polishing of thegallium antimonide monocrystal wafer is achieved, and three steps of rough polishing, medium polishing and fine polishing are not required; the process is simple, and the stability is high; the surface quality of the polished gallium antimonide monocrystal wafer is high, and the defects of scratches and fogging are avoided; the surface roughness is low; and the roughness value Ra can be less than0.15 nm.

Description

technical field [0001] The invention belongs to the technical field of surface processing of semiconductor materials, and in particular relates to a gallium antimonide single wafer polishing method. Background technique [0002] In recent years, infrared detectors developed with epitaxial antimonide II superlattice materials on GaSb substrates have shown excellent detection performance in the long-wave and very long-wave infrared bands, and have good performance in the fields of gas monitoring, night vision, and infrared imaging. application prospects. [0003] Epitaxial growth of high-quality antimonide II superlattice materials puts forward high quality requirements for GaSb substrate materials, requiring substrate materials with low defect density, high lattice integrity, and epitaxial buffer layers with atomic-level flatness , which puts high demands on the surface quality of GaSb substrates, and its application depends on the development of polishing technology. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B7/22B24B7/17B24B37/04B24B55/06C09G1/02
CPCB24B7/228B24B7/17B24B37/044B24B55/06C09G1/02
Inventor 严冰梁红昱张冰洁张传杰刘伟华
Owner WUHAN GAOXIN TECH
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