The invention relates to a double-surface
polishing method for a
gallium antimonide wafer. The double-surface
polishing method comprises the following steps of: grouping
wafer thickness measurement; initially cleaning a
wafer; adhering the wafer;
polishing a back surface; dismantling the wafer; adhering the wafer and polishing a positive surface; secondly cleaning the wafer; placing the wafer with polished double surfaces in a solution prepared from cleaning liquid and
purified water in volume ratio of 1:(3-10) for ultrasonic cleaning at 50-100 DEG for 10-30min, washing by using the
purified water; corroding chemically: preparing
corrosion liquid according to a proportion of CH3COOH, H2O and HF in volume ratio of (10-30):(5-15):1; and checking and packing. According to the double-surface polishing method for the
gallium antimonide wafer, disclosed by the invention, the
gallium antimonide (100) wafer with polished double surfaces can be machined in batch, the method is simple and practical, the maneuverability is strong, and the polished yield is up to 90%; simultaneously, a problem of oxidation of the polished
gallium antimonide wafer is released. The
gallium antimonide wafer polished by the double-surface polishing method disclosed by the invention is not larger than 20 microns in warping degree, not larger than 4 microns in wafer
surface flatness, 0.1-0.2 micron in
surface roughness and not larger than 5 microns in
total thickness of the wafer, and the defects of the polished wafer, such as
dirt,
fog, scratch, particles,
cracking, orange peel and crow claw, are not detected.