Method for producing very-long wave indium arsenide (InAs)/gallium antimonide (GaSb) second class superlattice infrared detector material

Abstract

The invention discloses a method for producing a very-long wave indium arsenide (InAs) / gallium antimonide (GaSb) second class superlattice infrared detector material, which comprises the step that: a P type doped GaSb buffer layer, a P type doped medium wave InAs / GaSb second class superlattice layer, a non-doped very-long wave InAs / GaSb second class superlattice layer, a N type doped medium wave InAs / GaSb second class superlattice layer and an N type doped InAs upper contact layer are sequentially grown on a semi-insulating GaSb substrate, so the very-long wave InAs / GaSb second class superlattice infrared detector material is obtained. After the method is utilized, because 'Sb-soak' and 'grow interruption' which are well designed are added in an interface design, the quality of the superlattice material is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor infrared detection, in particular to a preparation method of a very long wave band (12-20 microns) InAs / GaSb type II superlattice infrared detector material. Background technique [0002] VLWIR detectors with a band of 12-20 microns have important applications in strategic early warning, atmospheric temperature and relative humidity profile detection, atmospheric small element distribution and space detection. Traditional mercury cadmium telluride detectors have excellent detection performance, but as the wavelength increases, the difficulty of its materials increases sharply, and it encounters great challenges in the very long wavelength band. Quantum well infrared detectors are easier to achieve very long-wavelength detection, but their quantum efficiency is low, and the performance of the device is limited to a certain extent. The second type of superlattice is an ideal very long wave de...

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Problems solved by technology

[0003] However, the preparation of very long-wave InAs / GaSb type II superlattice infrared detector materials is very difficult, because the superlattice material whose absorption cut-off wavelength is in the very long-wave band generally needs to have a thickness of about 5nm for InAs in one period. While there is a 0.6% lattice mismatch between InAs and the substrate material GaSb

This requires the introduction of more InSb materials to balance the stress, and there is a 7% lattice mismatch between InSb and GaSb, the introduction of a large amount of InSb can easily cause the deterioration of the interface quality, thereby affecting the material quality

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