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Thin film material used for terahertz and infrared light polarization modulation and preparation method thereof

A thin-film material and polarization modulation technology, applied in the direction of polarizing elements, optics, optical elements, etc., can solve the problems that materials are not fully developed, and achieve the improvement of continuity and alignment, light absorption rate, and polarization extinction ratio Effect

Active Publication Date: 2017-08-18
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this material has not yet been fully exploited

Method used

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  • Thin film material used for terahertz and infrared light polarization modulation and preparation method thereof
  • Thin film material used for terahertz and infrared light polarization modulation and preparation method thereof
  • Thin film material used for terahertz and infrared light polarization modulation and preparation method thereof

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Embodiment Construction

[0021] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0022] The invention provides a controllable growth method of molecular beam epitaxy to self-assemble and grow different ErSb nanostructures in a GaSb matrix. The specific preparation method is as follows:

[0023] On the selected (100) crystal plane GaAs substrate by solid-state source molecular beam epitaxy, first remove the surface oxide layer by thermal evaporation, and grow a 200nm-thick GaAs buffer layer at 580°C to facilitate epitaxy. The surface is flat, and then the growth temperature is set to 530° C. to grow a GaSb stress release layer with a thickness of 60 nm. In this example, a multilayer ErSb:GaSb sample is designed, and the ErSb:GaSb layers with different doping concentrations are characterized to understand the growth mechanism of the material, and it is proved that different ErSb can be regulated by adjusting the do...

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Abstract

The invention discloses a thin film material used for terahertz and infrared light polarization modulation and a preparation method thereof. According to the thin film material, particularly, an ErSb nanowire array is embedded in a GaSb substrate, the direction of the nanowire array is vertical to or parallel with the surface of the substrate, and when the volume by volume concentration of the ErSb is 10%, the direction of the nanowire array is vertical to the surface of the substrate; and when the volume by volume concentration of the GaSb is 15 to 25%, the direction of the nanowire array is parallel with t the surface of the substrate. Through a molecular beam epitaxy method, a composite material of embedding the nanowire structure with a semi metallic property in a semiconductor material is acquired, the material can be used for a broadband terahertz and infrared polarizer and can be integrated with a terahertz and infrared optoelectronic device based on III-V semiconductor materials.

Description

technical field [0001] The invention relates to a film material which can be used as an electromagnetic wave polarizer, more specifically, it relates to a nanocomposite film material which can be used for polarization modulation of wafer-sized terahertz and infrared waves and a preparation method thereof. Background technique [0002] Most of the terahertz polarizers currently available on the market are made with metal grids. Because it is made by mechanical processing, the minimum limit of the metal grid spacing is about 10 microns. In the terahertz band (for example, electromagnetic waves greater than 3THz), because the wavelength is ten times larger than the metal grid spacing, the polarization is greatly reduced. Extinction Ratio. Researchers usually use thin film deposition and photolithography to manufacture infrared and high-frequency terahertz polarizers, and the requirements for transparent substrates often limit their applications in several terahertz to 20THz ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/30
CPCG02B5/3033
Inventor 芦红陈九果
Owner NANJING UNIV
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