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Cleaning method of gallium antimonide polished monocrystal wafer

A technology of polishing wafers and gallium antimonide, which is applied in chemical instruments and methods, crystal growth, electrical components, etc., can solve problems such as long time consumption, back invasion, and slow wafer corrosion rate

Active Publication Date: 2016-03-16
BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the slow corrosion rate of the wafer in the existing cleaning technology, the etching process takes a long time and the efficiency is low
Moreover, due to the long corrosion process, the temperature change before and after the corrosion solution is not easy to control, and problems such as back invasion and back blooming are also prone to occur.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Put 8 pieces of 2-inch gallium antimonide polished wafers with a thickness of 400μm into the cleaning basket, soak the basket in alcohol solution for 20 minutes at 60°C, then immediately put the basket into the overflow rinse tank, and use deionized Water overflow rinsing combined with quick flushing for 30 seconds, followed by manual flushing for 10 seconds, and then immersing the basket in 5% sulfuric acid, 1.5% hydrochloric acid, 20% acetic acid prepared according to the volume In the solution of ionized water, keep the temperature of the solution at 20°C and shake for 20 seconds, then put the basket into the overflow rinse tank again, rinse it with deionized water overflow rinse and quick flushing water for 40 seconds, and add After manually flushing with water for 10 seconds, put the gallium antimonide polished wafer into a wafer spin dryer and dry it with hot nitrogen at a drying temperature of 50°C for 30 seconds.

Embodiment 2

[0023] Put 8 pieces of 2-inch gallium antimonide polished wafers with a thickness of 400μm into the cleaning basket, soak the basket in alcohol solution for 25 minutes at 65°C, then immediately put the basket into the overflow rinse tank, and use deionized Water overflow rinsing combined with quick flushing for 90 seconds, and manual flushing for 15 seconds, then immerse the basket in 8% sulfuric acid, 3% hydrochloric acid, 23% acetic acid prepared according to the volume ratio, and the rest is to remove In the solution of ionized water, keep the temperature of the solution at 30°C and shake for 40 seconds, then put the basket into the overflow rinse tank again, rinse it with deionized water overflow rinse and quick flushing water for 90 seconds, and add After manually flushing with water for 15 seconds, put the gallium antimonide polished wafer into a wafer spin dryer and dry it with hot nitrogen gas at a drying temperature of 55°C for 60 seconds.

Embodiment 3

[0025] Put 8 pieces of 2-inch gallium antimonide polished wafers with a thickness of 400μm into the cleaning basket, soak the basket in alcohol solution for 30 minutes at 70°C, then immediately put the basket into the overflow rinse tank, use deionized Water overflow rinsing combined with quick flushing for 100 seconds, followed by manual flushing for 20 seconds, and then immersing the basket in 10% sulfuric acid, 5% hydrochloric acid, In the solution of ionized water, keep the temperature of the solution at 40°C and shake for 60 seconds, then put the basket into the overflow rinse tank again, rinse it with deionized water overflow rinse and quick flushing water for 100 seconds, and add After manually flushing with water for 20 seconds, put the gallium antimonide polished wafer into a wafer spin dryer and dry it with hot nitrogen gas at a drying temperature of 60°C for 90 seconds.

[0026] preferred embodiment

[0027] Put 8 pieces of 2-inch gallium antimonide polished wafers...

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Abstract

The invention discloses a cleaning method of a gallium antimonide polished monocrystal wafer. The cleaning method comprises the following steps: (1) embathing the gallium antimonide polished monocrystal wafer with an organic solvent; (2) washing the gallium antimonide polished monocrystal wafer with deionized water; (3) putting the gallium antimonide polished monocrystal wafer into a chemical corrosion solution, and corroding the wafer surface at 10-40 DEG C; (4) washing the gallium antimonide polished monocrystal wafer corroded in the step (4) with the deionized water; and (5) drying the gallium antimonide polished monocrystal wafer. According to the used cleaning technology and corrosion solution, impurities and particles left on the wafer surface in the processing process can be effectively eliminated to obtain a clean surface; meanwhile, the surface roughness of the wafer is improved to reach the condition of Rq=0.5-0.3 microns; and the requirements of epitaxial growth are met.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, and in particular relates to a cleaning method used in the processing of gallium antimonide single-crystal polished wafers of III-V compound semiconductor materials. Background technique [0002] Gallium antimonide single crystal polished wafer is the key basic material of type II superlattice uncooled long-wave infrared detector and focal plane array. The uncooled long-wave infrared detector has light weight, long life, high sensitivity, high reliability, etc. It has good application prospects in the field of infrared technology. [0003] The development of modern infrared imaging technology also puts forward higher requirements for wafer materials. Obtaining gallium antimonide substrate wafer materials with good surface quality is very important for the epitaxial growth of gallium antimonide substrates. The processing of gallium antimonide substrate wafers generally includes cutting, e...

Claims

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Application Information

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IPC IPC(8): H01L21/02C30B33/10
CPCC30B33/10H01L21/02052H01L21/0209
Inventor 刘彤杨俊刘京明董志远赵有文
Owner BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD
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