Preparation method of in-situ electrifying type indium arsenide/gallium antimonide superlattice semiconductor sample of transmission electron microscope

Abstract

The invention belongs to the technical field of nanometer functional materials, and specifically relates to a preparation method of an of in-situ electrifying type indium arsenide / gallium antimonidesuperlattice semiconductor sample of a transmission electron microscope. The preparation method comprises three steps of preparing high-temperature conductive adhesive, preparing a superlattice material transmission sample, and preparing an in-situ electrode, wherein the indium arsenide / gallium antimonide superlattice semiconductor sample suitable for the characterization test of the transmissionelectron microscope can be prepared by oppositely adhering the conductive adhesive, and mechanically thinning and other processes, and then the sample is connected to a four-electrode transmission electron microscope sample stand through an enamel insulated wire, therefore, the in-situ electrifying test of the transmission electron microscope can be carried out. According to the preparation method, an arsenide / gallium antimonide superlattice semiconductor is a classic and practical infrared photoelectric detecting device for researching the physical mechanism between a microstructure and current carrier property and the conveying mechanism of a current carrier in an electrifying working state, and the arsenide / gallium antimonide superlattice semiconductor assists the design of photoelectric devices such as an infrared detector and a quantum cascade laser.

Description

technical field [0001] The invention belongs to the technical field of nanometer functional materials, and in particular relates to a method for preparing a sample of a superlattice semiconductor body material by applying an electric field in situ for a transmission electron microscope. Background technique [0002] III-V compound superlattice semiconductor is a mature and classic infrared detection device and imaging device. Based on its advantages such as wide detection range, flexible energy band adjustment and low dark current, III-V compound superlattice semiconductors have been widely studied by domestic and foreign scholars. 1-3 . Among them, indium arsenide, gallium antimonide, aluminum antimonide, and indium antimonide have similar lattice constants, and they have become the main choice for structure design and regulation. 4 . In recent years, in order to continuously improve the quantum efficiency of III-V compound superlattice semiconductors or reduce the dark ...

AI Technical Summary

Problems solved by technology

Due to the low hardness of III-V compounds, it is difficult to prepare samples for transmission electron microscopy. In the past ten years, the microscopic research on III-V compounds in the literature has focused on static structural characterization, but the research on nanoscale microscopic electrical properties under working conditions is blank. , which is a research bottleneck that urgently needs to be broken through for the research of device materials

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