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Polishing agent and method for polishing gallium antimonide wafer by employing polishing agent

A technology of polishing liquid and gallium antimonide, which is applied in the field of polishing liquid, can solve the problems of uneven thickness of gallium antimonide substrate material, chipping and slag removal on the surface of the substrate, scratches, etc., and achieves less human control factors and no chipping. The effect of edge slag removal and improved availability

Active Publication Date: 2017-04-26
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since gallium antimonide material is a soft and brittle material, the conventional grinding method is easy to chip and slag to scratch the substrate surface and form deep damage; while the ordinary polishing process is easy to make the gallium antimonide substrate material uneven thickness

Method used

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  • Polishing agent and method for polishing gallium antimonide wafer by employing polishing agent

Examples

Experimental program
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Effect test

example 1

[0043] Example 1: A type containing SiO 2 Abrasive suspending weakly acidic and alkaline bottom liquid, adding hydrogen peroxide as an oxidizing agent, adding a small amount of glacial acetic acid formula, put the pre-treated gallium antimonide substrate with a thickness of 454 microns, put it on a general polishing machine, and polish it The rotation speed is 40rpm, and the polishing pressure is 100g / cm 2 , add 22℃, 12% SiO 2 In the mixed polishing liquid of abrasive + 7% hydrogen peroxide + 0.7% glacial acetic acid, the drop rate of the polishing liquid is 12ml / min, the polishing time is 30mins, and then cleaned with absolute ethanol and blown dry with nitrogen. After polishing, the gallium antimonide substrate is removed by 94 microns, and the surface of the gallium antimonide is smooth and flat.

example 2

[0044] Example 2: A type containing SiO 2 Abrasive suspending weakly acidic and alkaline base liquid, adding hydrogen peroxide as an oxidizing agent, adding a small amount of lactic acid formula, put the pre-treated gallium antimonide substrate with a thickness of 480 microns on a general polishing machine, and the polishing speed 40rpm, polishing pressure 110g / cm 2 , adding 26°C, 13% SiO 2 In the mixed polishing liquid of abrasive + 8% hydrogen peroxide + 3% lactic acid, the drop rate of the polishing liquid is 15ml / min, the polishing time is 20mins, and then cleaned with absolute ethanol and blown dry with nitrogen. After polishing, the gallium antimonide substrate is removed by 83 microns, and the gallium antimonide surface is smooth and flat.

example 3

[0045] Example 3: A type containing SiO 2 Abrasive suspending weakly acidic and alkaline bottom liquid, adding hydrogen peroxide as an oxidizing agent, adding a small amount of lactic acid formula, put the pre-treated gallium antimonide substrate with a thickness of 425 microns on a general polishing machine, and the polishing speed 50rpm, polishing pressure 120g / cm 2 , add 25℃, 14% SiO 2 In the mixed polishing solution of abrasive + 10% hydrogen peroxide + 4% lactic acid, the drop rate of the polishing solution is 15ml / min, the polishing time is 20mins, and then cleaned with absolute ethanol and blown dry with nitrogen. After polishing, the gallium antimonide substrate is removed by 95 microns, and the surface of the gallium antimonide is smooth and flat.

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Abstract

The invention discloses a polishing agent and a method for polishing a gallium antimonide wafer by employing the polishing agent. The polishing agent is high in speed of polishing and removing a gallium antimonide material; the polished wafer surface is glabrous and smooth; edge breakage and scaling off do not exist; the polishing technology is simple, artificial control factors are relatively few, the availability ratio is greatly improved, and the polishing agent and the method are beneficial to cost reduction.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a polishing liquid and a method for polishing gallium antimonide using the polishing liquid. Background technique [0002] GaSb is another very important III-V semiconductor substrate material after GaAs and InP. It can be used to make many very useful narrow-band optoelectronic devices, such as long-wave light-emitting diodes, lasers, detectors, and lasers made with it The wavelength can be changed within the range of 1.7-4.3 μm, and the conversion efficiency of GaAs / GaSb layer solar cells developed with GaSb single crystal as the substrate can reach 35%; therefore, GaSb is widely used in infrared research, optical fiber communication, space technology, infrared focusing plane array (IRfocal plane arrays) and other fields have attracted widespread attention. [0003] Although mercury cadmium telluride crystal MCT is a recognized and long-term used infrared band ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/304
CPCC09G1/02H01L21/304
Inventor 程雨肖钰李春领
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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