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Rheotaxial preparation method of gallium antimonide quantum dot

A liquid phase epitaxy, gallium antimonide technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as high toxicity and high cost, and achieve low production cost, wide application prospects, and uniform size distribution. Effect

Inactive Publication Date: 2012-02-08
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solve the problem of high cost and high toxicity of existing technology

Method used

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  • Rheotaxial preparation method of gallium antimonide quantum dot
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  • Rheotaxial preparation method of gallium antimonide quantum dot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] 1. Configuration of growth source

[0027] Composition determination: the epitaxial growth temperature in the present invention is 575° C., the mole percentage of gallium is 0.8, and the mole percentage range of antimony (Sb) is 0.2. According to the size of the graphite liquid tank and the molar percentage and molar weight of the above-mentioned growth sources, the required amount of antimony (Sb) and gallium (Ga) can be obtained.

[0028] (2) Weighing of growth source: According to the above calculation, use a microbalance to accurately weigh the antimony (Sb) source and gallium (Ga) source required for growth. The used antimony (Sb) source and gallium (Ga) source are all 99.99999% (7N) high-purity elemental sources.

[0029] 2. Preparatory work before epitaxial growth

[0030] (1) Graphite boat treatment. In order to avoid pollution from growth sources, the boat should be very clean. Before use, it should be soaked in aqua regia for 24 hours to remove impurities, ...

Embodiment 2

[0042] 1. Configuration of growth source

[0043] (1) Composition calculation: the epitaxial growth temperature in the present invention is 570° C., the mole percentage range of gallium is 0.85, and the mole percentage range of antimony (Sb) is 0.15. According to the size of the graphite liquid tank and the molar percentage and molar weight of the above-mentioned growth sources, the required amount of antimony (Sb) and gallium (Ga) can be obtained.

[0044] (2) Weighing of growth source: According to the above calculation, use a microbalance to accurately weigh the antimony (Sb) source and gallium (Ga) source required for growth. The used antimony (Sb) source and gallium (Ga) source are all 99.99999% (7N) high-purity elemental sources.

[0045] 2. Preparatory work before epitaxial growth

[0046] (1) Graphite boat treatment. In order to avoid pollution from growth sources, the boat should be very clean. Before use, it should be soaked in aqua regia for 24 hours to remove im...

Embodiment 3

[0058] 1. Configuration of growth source

[0059] (1) Determination of growth source components: the epitaxial growth temperature in the present invention is 565° C., the mole percentage of gallium is 0.9, and the mole percentage of antimony (Sb) is 0.1. According to the size of the graphite liquid tank and the molar percentage and molar weight of the above-mentioned growth sources, the required amount of antimony (Sb) and gallium (Ga) can be obtained.

[0060] (2) Weighing of growth source: According to the above calculation, use a microbalance to accurately weigh the antimony (Sb) source and gallium (Ga) source required for growth. The used antimony (Sb) source and gallium (Ga) source are all 99.99999% (7N) high-purity elemental sources.

[0061] 2. Preparatory work before epitaxial growth

[0062] (1) Graphite boat treatment. In order to avoid pollution from growth sources, the boat should be very clean. Before use, it should be soaked in aqua regia for 24 hours to remov...

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Abstract

The invention discloses a rheotaxial preparation method of a gallium antimonide quantum dot. The method comprises the steps of rapidly pushing a growth source with an overcooling degree from the surface of a gallium arsenide substrate through a drive motor; and consequently forming a material structure of the gallium antimonide quantum dot on the surface of the substrate due to the lattice mismatch between the material of the quantum dot and the surface of the substrate. The preparation method provided by the invention is simpler and lower in cost, and the problems in high cost and high toxicity in the prior art are solved.

Description

technical field [0001] The invention relates to a preparation method of gallium antimonide quantum dot material, in particular to a liquid phase epitaxy preparation method of gallium antimonide quantum dot, which is widely used in solar devices, information function devices and the like. Background technique [0002] In recent years, people have been looking for a material system that can more effectively improve the efficiency of solar cells. Theoretical calculations show that the efficiency of solar cells with GaAs / GaSb quantum dots / GaAs composite structures can reach 44.5%. Therefore, GaSb quantum dot composite solar cells have attracted great attention. At present, the preparation of GaSb quantum dot materials mainly adopts two methods: molecular beam epitaxy (MBE) and low pressure-organic metal chemical vapor deposition (LP-MOCVD): [0003] (1) Growth of GaSb quantum dots by molecular beam epitaxy [0004] The technology of growing GaSb quantum dots by molecular beam ...

Claims

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Application Information

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IPC IPC(8): H01L21/208
Inventor 胡淑红戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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