Thermal coreduction preparation method of gallium antimonide nano-semiconductor solvent

Abstract

A process for preparing the nano-particles of GaSb semiconductor by solvent heat coreduction method includes such steps as reacting between CaCl3, SbCl3, reducer and solvent at 120-350 deg.C for 10-60 hr, cooling, filtering, washing and drying. Its advantages are less pollution and low reaction temp.

Description

technical field [0001] The invention relates to a semiconductor material preparation technology, in particular to a gallium antimonide nano semiconductor solvothermal co-reduction preparation method. Background technique [0002] The method for preparing VIII-V compound semiconductors is generally obtained by reacting molten elemental substances at high temperatures in the solid phase. Metal-organic compound vapor deposition (MOCVD) and molecular beam epitaxy (MBE) developed in recent years have been widely used in the preparation of thin films and superlattices of compound semiconductors, but these methods generally require high temperatures of 500-600 ° C, and due to The high reaction temperature and high activity of the reaction precursor often require absolute anhydrous and oxygen-free operation, which makes the preparation process quite complicated. In order to achieve lower preparation temperature and better control of grain shape and size, it is very necessary to see...

AI Technical Summary

Problems solved by technology

Metal-organic compound vapor deposition (MOCVD) and molecular beam epitaxy (MBE) developed in recent years have been widely used in the preparation of thin films and superlattices of compound semiconductors, but these methods generally require high temperatures of 500-600 ° C, and due to The reaction temperature is high, the activity of the reaction precursor is high, and it often requires absolute anhydrous and oxygen-free operation, which makes the preparation process quite complicated