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Semiconductor material polishing method and polishing solution for polishing gallium antimonide substrate

A technology for semiconductors and polishing liquids, applied in polishing compositions containing abrasives, semiconductor/solid-state device manufacturing, electrical components, etc. , The effect of uniform surface defects and maintaining stability

Pending Publication Date: 2021-04-23
SUZHOU KUNYUAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is, aiming at adopting prior art CMP technology to polishing soft semiconductor material such as gallium antimonide, the metal ion etc. contained in polishing abrasive, polishing liquid are easy to be attached to the surface of polished object, make polishing object surface produce Insufficiency of scratches and low lifespan of polishing fluid provides a polishing method for semiconductor materials, especially suitable for polishing softer semiconductor substrates such as gallium antimonide or indium antimonide

Method used

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  • Semiconductor material polishing method and polishing solution for polishing gallium antimonide substrate
  • Semiconductor material polishing method and polishing solution for polishing gallium antimonide substrate
  • Semiconductor material polishing method and polishing solution for polishing gallium antimonide substrate

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Embodiment 1

[0067] Gnad41 grinding and polishing machine was used for polishing.

[0068] The process flow of the gallium antimonide substrate includes grinding, chamfering, polishing, and cleaning, and the present invention is mainly described for the polishing process.

[0069] First remove the line marks on the surface of the gallium antimonide wire-cut sheet, and grind it to the thickness required by the process. Generally, the thickness removed on one side is 40-50um during grinding; then the ground gallium antimonide wafer is cleaned with a cleaning agent and ultrasonic waves , to ensure that there are no particles produced during gallium antimonide grinding on the surface; heat 60-80°C with solid paraffin to paste the φ50.8±0.5mm gallium antimonide wafer evenly on the quartz carrier plate, cool and compact it to ensure TTV≤2- 3um, to ensure that the total thickness deviation accuracy of subsequent polishing is within a controllable range, use a dust-free cloth to dip isopropyl alco...

Embodiment 2

[0080] The process flow of gallium antimonide wafer includes grinding, chamfering, polishing, and cleaning, and the present invention mainly focuses on the polishing process. First remove the line marks on the surface of the gallium antimonide wire-cut sheet, and grind it to the thickness required by the process (generally, the removal thickness of one side is 40-50um); then clean the ground gallium antimonide wafer with a cleaning agent and ultrasonic waves, Make sure that there are no particles produced during gallium antimonide grinding on the surface; heat 60-80°C with solid paraffin, paste the φ50.8±0.5mm gallium antimonide wafer evenly on the quartz carrier plate, cool and compact it, and ensure that TTV≤2-3um , to ensure that the total thickness deviation accuracy of subsequent polishing is within a controllable range, use a dust-free cloth to dip isopropanol or absolute ethanol to wipe off the excess paraffin on the quartz carrier plate, around the wafer and on the surf...

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Abstract

In order to overcome the defects that when a soft semiconductor material such as gallium antimonide is polished by adopting a CMP (Chemical Mechanical Polishing) process in the prior art, metal ions and the like contained in a polishing abrasive and a polishing solution are easily attached to the surface of a polished object, scratches are generated on the surface of the polished object, and the service life of the polishing solution is short, the invention provides a semiconductor material polishing method and a polishing solution for polishing a gallium antimonide substrate. According to the method, a semiconductor material with the Mohs hardness of 1.5-6 is polished. A first step is rough polishing, and a polishing solution containing a hard abrasive is adopted to conduct mechanical polishing on a semiconductor material substrate slice. A second step is medium polishing, and a medium polishing solution comprises a soft polishing abrasive, a weak acid oxidizing agent, organic acid, a hydrophilic nonionic surfactant and deionized water. A third step is fine polishing, and a fine polishing solution comprises a weak acid oxidizing agent, organic acid and deionized water. When the polishing method is adopted for polishing a semiconductor material, corrosion pits and scratches are eliminated, pits are reduced, and a material with good surface roughness is obtained.

Description

technical field [0001] The invention relates to the technical field of optoelectronic material polishing, in particular to a chemical mechanical polishing method for a gallium antimonide substrate. Background technique [0002] Gallium antimonide is an important III-V compound semiconductor material, a good material for electronic and optoelectronic devices, and an excellent material for manufacturing solar cells. Since gallium antimonide material has a narrow bandgap and a large lattice constant, it is easy to match with semiconductor materials with a bandgap, grow high-quality superlattice and double heterojunction epitaxial layer, and is also a good choice for manufacturing infrared monitoring Excellent substrate material for devices and quantum well devices. In addition to the huge potential application value in optical fiber communication, the devices made of gallium antimonide materials also have great potential application value in other fields, such as making infrar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306C09G1/02
CPCH01L21/30625C09G1/02
Inventor 陈意桥钱磊周千学
Owner SUZHOU KUNYUAN OPTOELECTRONICS CO LTD
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