The invention relates to the technical field of precision
machining and in particular relates to a
polishing solution, a preparation method thereof and a
processing method of a
silicon carbide crystal. The
polishing solution comprises the following components in parts by weight: 5-30 parts of
polycrystalline diamond micropowder, 1000 parts of silica
sol, 2-40 parts of a suspending agent,4-21 partsof a
wetting agent, 2-14 parts of a defoaming agent and 2-10 parts of a pH
regulator. The preparation method comprises the steps: mixing the
polycrystalline diamond micropowder, the suspending agent,the
wetting agent, the defoaming agent and the pH
regulator, adding the mixture into water, then, adding silica
sol, and carrying out uniform stirring. The
polishing solution can be used for
processing the
silicon carbide crystal. If the polishing solution disclosed by the invention is matched with a polishing pad to polish
silicon carbide, the precision polishing time can be effectively shortened, the whole
grinding and polishing time can be shortened, and the surface quality of the
crystal can be remarkably improved.