Polishing solution, preparation method thereof and processing method of silicon carbide crystal
A processing method and polishing liquid technology, which are applied to polishing compositions containing abrasives, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low polishing efficiency, reduce the time of fine polishing, shorten the time of fine polishing, Effect of Polishing Rate Elimination
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Embodiment 1
[0076] The preparation method of the polishing liquid of this embodiment includes the following steps:
[0077] (1) Take 50g D50=0.125μm polycrystalline diamond powder, 100g inorganic bentonite, 35g BYK-345, 50gAFE-3168, 10g borax, add 5kg of pure water, and ultrasonically stir for 0.5h;
[0078] (2) Add 5 kg of silica sol with a solid content of 40% and a particle size of 70 nm to the material of step (1), and then ultrasonically stir for 0.5 h to obtain a polishing liquid.
Embodiment 2
[0080] The preparation method of the polishing liquid of this embodiment includes the following steps:
[0081] (1) Take 25g D50=0.5μm polycrystalline diamond micropowder, 45g Silok 7370W, 60g BYK-W 9010, 20g BYK-024, 10g BYK-094 and 50g methyl monoethanolamine, add 5kg of pure water, ultrasonically stir for 0.5h ;
[0082] (2) Add 5 kg of silica sol with a particle size of 80 nm with a solid content of 45% to the material of step (1), and then ultrasonically stir for 0.5 h to obtain a polishing liquid.
Embodiment 3
[0084] The preparation method of the polishing liquid of this embodiment includes the following steps:
[0085] (1) Take 100g of polycrystalline diamond powder with D50=0.25μm, 30g BYK-431, 30g TRITON CF-10, 45g FOAMEX 825, and 20g potassium hydroxide, add 5kg of pure water, and ultrasonically stir for 0.5h;
[0086] (2) Add 5 kg of silica sol with a solid content of 50% and a particle size of 60 nm to the material of step (1), and then ultrasonically stir for 0.5 h to obtain a polishing liquid.
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