The invention relates to a reference pixel for an uncooled
infrared detector and a manufacturing method of the reference pixel. The reference pixel comprises a
metal reflecting layer arranged on an ASIC circuit, an insulating medium layer, a sacrificial layer, a support layer, a thermo-sensitive thin film, a medium
protection layer, an
electrode metal layer, a
metal filling pattern, a shielding layer, a protection structure and a
passivation layer medium, wherein the insulating medium layer, the sacrificial layer, the support layer, the thermo-sensitive thin film, the medium
protection layer, the
electrode metal layer, the metal filling pattern, the shielding layer, the protection structure and the
passivation layer medium are sequentially arranged on the metal reflecting layer;
pier holes are arranged in the sacrificial layer; a through hole is arranged in each
pier hole; and a
contact hole is arranged in the medium
protection layer. A special structure of the reference pixel is finished; meanwhile, thermal conductance of the reference
pixel array is improved since the reference pixel is covered with the metal layer in large area; the
thermal radiation interference factor of a
chip environment is greatly removed; and the performance of the uncooled
infrared detector is improved.