Reference pixel for uncooled infrared detector and manufacturing method of reference pixel

Abstract

The invention relates to a reference pixel for an uncooled infrared detector and a manufacturing method of the reference pixel. The reference pixel comprises a metal reflecting layer arranged on an ASIC circuit, an insulating medium layer, a sacrificial layer, a support layer, a thermo-sensitive thin film, a medium protection layer, an electrode metal layer, a metal filling pattern, a shielding layer, a protection structure and a passivation layer medium, wherein the insulating medium layer, the sacrificial layer, the support layer, the thermo-sensitive thin film, the medium protection layer, the electrode metal layer, the metal filling pattern, the shielding layer, the protection structure and the passivation layer medium are sequentially arranged on the metal reflecting layer; pier holes are arranged in the sacrificial layer; a through hole is arranged in each pier hole; and a contact hole is arranged in the medium protection layer. A special structure of the reference pixel is finished; meanwhile, thermal conductance of the reference pixel array is improved since the reference pixel is covered with the metal layer in large area; the thermal radiation interference factor of a chip environment is greatly removed; and the performance of the uncooled infrared detector is improved.

Description

Technical field [0001] The invention relates to the field of micro-electromechanical system manufacturing in semiconductor technology, in particular to an uncooled infrared detector reference pixel and a manufacturing method thereof. Background technique [0002] With the rapid development of technology now, uncooled infrared focal plane detectors are widely used in the fields of automobiles, security, biomedicine, electric power, military, aviation, police, forest fire prevention and the Internet of Things. The existing uncooled infrared focal plane array detectors usually consist of an effective pixel array and a reference pixel. In order to compensate for the impact of ambient temperature changes on the output of the photosensitive effective pixel array, a reference pixel that is not sensitive to light needs to be integrated in the chip. . The reference pixel needs to avoid receiving infrared radiation, and to quickly transmit the self-heating infrared radiation of the circui...

AI Technical Summary

Problems solved by technology

The reference pixel needs to avoid receiving infrared radiation, and to quickly transfer away the self-heating infrared radiation of the circuit or the heat conducted by the device environment, it is necessary to design a special layer of structure separately to shield the infrared radiation and conduct the received heat, and keep The stability of the reference pixel signal, such as the use of a shielding cover or a shielding structure, is used to shield the infrared radiation signal and quickly transmit the infrared radiation from the self-heating of the chip or the package tube, which increases the process steps and manufacturing difficulty, and at the same time has an additional layer of structure and Process steps will reduce product yield, increase manufacturing cycle and manufacturing cost

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