The invention relates to a double-surface
polishing method for a
silicon carbide chip. The double-surface
polishing method comprises the steps that the
silicon carbide chip is subjected to rough
polishing, semi-finishing polishing and finishing polishing sequentially on a double-surface polishing
machine; during rough polishing, water-soluble
diamond polishing liquid is used, the
diameter of
diamond particles is 5-15 microns, the polishing pressure is 40-100 kg, and a polishing disc is a resin
copper disc or a resin
tin disc or a polishing pad of a
polyurethane structure; during semi-finishing polishing, water-soluble
diamond polishing liquid is used, the
diameter of diamond particles is 0.25-3 microns, the polishing pressure is 60-120 kg, and a polishing disc is a resin
copper disc or a resin
tin disc or a polishing pad of a
polyurethane structure; and during finishing polishing, alkali
silicon dioxide polishing liquid is used, an
oxidizing agent with a proper proportion is added, the PH value of the finishing polishing liquid is adjusted to be 9-13, the polishing pressure is 80-140 kg, and a polishing pad is of a fluff structure. By means of the double-surface polishing method, the
processing time can be shortened by a half, the flatness of the
silicon carbide chip is improved, the surface quality is consistent after polishing, and the
silicon carbide chip has no defects of orange peel,
scratching damage, matte and the like.