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Preparation method of indium antimonide (211) direction single crystal

A technology of indium antimonide and single crystal, which is applied in the field of preparation of single crystal of indium antimonide, can solve the problems of unreported crystal pulling method, easy occurrence of polycrystal, and difficulty in pulling single crystal, so as to achieve broad application and high performance Stabilizes and reduces dislocation effects

Inactive Publication Date: 2018-06-15
云南昆物新跃光电科技有限公司
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

However, there are relatively few studies on the direction single crystal of indium antimonide, and there is no report on the pulling method of the direction single crystal of indium antimonide, mainly because of the influence of the structure of the direction single crystal itself, Polycrystalline is easy to appear in the crystal pulling process, and it is difficult to pull a single crystal with a complete direction

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The preparation steps of an indium antimonide direction single crystal are as follows,

[0020] (1) Mix indium and antimony with a purity of 6N according to a molar ratio of 1:1, put the mixture of the two in a quartz boat, then transfer it to a sealed quartz tube filled with hydrogen, and heat it to make the inside of the quartz boat The solid is completely melted, and kept for 5 hours to ensure that the antimony and indium are evenly mixed, and then solidified to obtain an indium antimonide polycrystalline material;

[0021] (2) After performing 20 regional purifications on the indium antimonide polycrystalline material, the Hall effect is used to test the regionally purified ingot, and the carrier concentration in the ingot is intercepted N≤1×10 14 cm -3 (77K), electron mobility u≥5×10 5 The part of / V·S(77K) is high-purity indium antimonide polycrystalline material;

[0022] (3) Polish and clean the surface of the high-purity indium antimonide polycrystalline ma...

Embodiment 2

[0026] The same steps and process conditions as in Example 1 were used to prepare indium antimonide direction single crystal. After the crystal pulling process of the tapered section was completed, the rotation of the crucible, the rotation of the seed crystal, and the pulling of the seed crystal were stopped, and Reduce the heating power so that the temperature on the surface of the indium antimonide direction single crystal drops to 400°C, and keep it at 400°C for 30h, then continue to reduce the heating power to ensure that the temperature of the indium antimonide direction is lowered to room temperature, and then placed for 24 hours before being taken out to obtain a low dislocation indium antimonide direction single crystal.

[0027] Slice the prepared low-dislocation indium antimonide direction single crystal equal-diameter section, and use CP4 etchant to etch the equal-diameter section slice, and then put it under an optical microscope to observe and count the disloc...

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Abstract

Belonging to the technical field of photoelectric materials, the invention relates to a preparation method of an indium antimonide (211) direction single crystal. The method mainly regulates the temperature, the seed crystal pulling speed and the shouldering angle of the crystal pulling process, and successfully realizes preparation of the indium antimonide (211) direction single crystal. Moreover, through in-situ annealing treatment on the crystal pulled indium antimonide (211) direction single crystal, the dislocation density of the prepared indium antimonide (211) direction single crystal is greatly reduced. Compared with an indium antimonide (111) direction single crystal, an infrared detector prepared from the indium antimonide (211) direction single crystal provided by the inventionhas more stable performance. The invention provides a technical scheme for successful preparation of the indium antimonide (211) direction single crystal, and greatly broadens application of the indium antimonide (211) direction single crystal to infrared detectors.

Description

technical field [0001] The invention relates to a method for preparing an indium antimonide <211> direction single crystal, belonging to the technical field of photoelectric materials. Background technique [0002] Indium antimonide is the material with the narrowest bandgap and the largest mobility among III-V compound semiconductors. Its physical and chemical properties are stable, and it is widely used in infrared detectors and Hall devices. The quantum efficiency of infrared detectors is closely related to the selected infrared sensitive materials, and indium antimonide has a high quantum efficiency in the 3 μm ~ 5 μm band, and indium antimonide has low cost in the preparation of infrared detectors, indium antimonide infrared Detectors have attracted more and more attention because of their important military applications and broad prospects in civilian applications. In addition, in order to adapt to the trend of large-scale development of indium antimonide infrar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B15/00C30B33/02
CPCC30B15/00C30B29/40C30B33/02
Inventor 李忠良叶薇李增寿刘世能陈建才何雯瑾苏玉辉龚晓霞太云见赵鹏黄晖
Owner 云南昆物新跃光电科技有限公司
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