Gallium nitride (GaN) based personal identification number (PIN) detector based on imaging sapphire substrate and preparation method

Abstract

The invention relates to a gallium nitride (GaN) based personal identification number (PIN) detector based on an imaging sapphire substrate and a preparation method. The structure is that a thick cushion layer grows on the imaging sapphire substrate, the thick cushion layer comprises low temperature cushion layer growing, recrystallization, three-dimensional growing and two-dimensional growing, and a GaN film material with good quality is obtained. An n+ type GaN layer, an intrinsic GaN layer and a p type GaN layer sequentially grow. A p ohmic contact electrode is deposited on the surface of a p layer, a p type film layer and an intrinsic layer are etched to an n+ type film layer, the shape of an etching table face is round, square or hexagon, an n type ohmic contact electrode is deposited on an n+ type layer, and an n type electrode is annular or square. A passivation layer grows and holes are drilled, the p electrode and the n electrode are exposed out, and a thickening electrode grows on the p electrode and the n electrode respectively. Devices prepared by using the method are high in growth material quality, small in dislocation and defect density, small in dark current and stable in performance. The dark current under reversal biasing voltage almost has no change, and quantum efficiency is substantially improved.

Description

technical field [0001] The invention relates to ultraviolet detector technology, in particular to an ultraviolet detector based on a GaN-based PIN structure grown on a patterned sapphire substrate (PSS, Patterned Sapphire Substrate) and a preparation method thereof. Background technique [0002] In recent years, GaN-based materials have become mainstream materials and research hotspots in the field of blue lasers and ultraviolet detectors due to their characteristics of direct bandgap semiconductors, stable chemical properties, adjustable bandgap, and wide spectral response range. GaN-based LEDs have great application prospects in energy saving; and the use of GaN-based semiconductor detectors instead of vacuum tubes for ultraviolet detection also has a significant application background; at present, ultraviolet detection also has broad application prospects in the military. [0003] Due to the mismatch between the lattice constant and thermal expansion coefficient of the sa...

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Problems solved by technology

[0004] At present, there is no public report on the ultraviolet detector based on the GaN-based PIN structure of the patterned sapphire substrate.

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