Method for epitaxial generation of gallium antimonide on gallium arsenide substrate

Abstract

The invention discloses a method of the epitaxial growth GaSb on a gallium arsenide substrate. A three buffer layers growth process is adopted in the method. The method specifically comprises the following steps: firstly, a GaAs buffer layer grows on a GaAs substrate under the condition of 580 DEG C; secondly, an AlSb buffer layer grows on the grown GaAs buffer layer under the condition of 550 DEG C; thirdly, a GaSb / AlSb super crystal lattice buffer layer grows on the AlSb buffer layer under the condition of 450 DEG C; fourthly, a GaSb epitaxial layer grows on the GaSb / AlSb super crystal lattice buffer layer under the condition of 400 to 500 DEG C. By utilizing the invention, a doublebuffer layer process is changed into a three-buffer layer process, firstly the GaAs buffer layer grows on the GaAs substrate, then the AlSb buffer layer grows on the grown GaAs buffer layer, the GaSb / AlSb super crystal lattice buffer layer grows on the AlSb buffer layer, finally the GaSb epitaxial layer grows on the GaSb / AlSb super crystal lattice buffer layer, and the perforating dislocation is reduced effectively, thereby the optical quality of the GaSb epitaxial layer is enhanced.

Description

technical field [0001] The invention relates to gallium antimonide (GaSb) crystal epitaxial growth technology, in particular to a method for epitaxially growing GaSb on a gallium arsenide (GaAs) substrate by adopting a three-buffer layer growth process. Background technique [0002] GaSb-based semiconductor material (lattice constant is InAs, GaSb, AlSb and their ternary compounds), both in terms of optical and electrical properties, they make up for the shortcomings of traditional semiconductor materials, and are ideal for preparing high-speed, low-power electronic devices-high electron mobility transistors (HEMTs) ) or new materials of choice for mid-to-far infrared detectors and lasers (InAs / GaSb, superlattice infrared detectors and lasers). [0003] Although GaSb single wafers have been commercialized, GaSb epitaxial layers are usually prepared on GaAs substrates due to the disadvantages of high cost and lack of semi-insulating substrates. In the heteroepitaxy process...

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Problems solved by technology

However, there are the following disadvantages: due to the lattice mismatch of about 7% between the GaAs substrate and the GaSb epitaxial layer, GaSb grows in a three-dimensional island shape, and the obtained GaSb material has a rough surface, high dislocation density, and poor crystal quality

[0006] However, the test found that the optical quality of the GaSb epitaxial layer prepared by the double buffer layer process is not good. Errors enter the GaSb epitaxial layer, resulting in a large number of non-radiative recombination centers, and the photogenerated carriers are recombined by these defects before radiative recombination occurs.

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