118results about How to "Suitable for large area production" patented technology

The invention relates to a field electron emitting cathode based on the composite material of graphene / zinc oxide nanowire, comprising a conductive electrode and the composite material of graphene / zinc oxide nanowire, wherein the composite material of graphene / zinc oxide nanowire is positioned on the surface of the electrode, and consists of the graphene with the size ranging from 2 to 10 micronsand the zinc oxide nanowire with the length ranging from 1 to 2 microns and the diameter being 100 nanometers; and the turn-on field is lower than or equal to 1.7 volt / microns, and the threshold field is lower than or equal to 4 volt / microns. The filed emission electron source has the advantages of lower turn-on field, low threshold field, high emission current density, stable emission, easy preparation method and easy realization of industrialized volume production.

The invention discloses a method for manufacturing a transparent thin-film solar cell component. The method comprises a process of manufacturing a transparent substrate, a first electrode layer, a photoelectric translating cell area and a back electrode layer and is characterized in that the back electrode layer is made from a high-permeability and high-conductivity transparent conducting film, wherein the conducting film consists of a first layer of transparent conducting sull, a metal film and a second layer of transparent conducting sull, which are sequentially deposited on the photoelectric translating cell area. The thickness of the metal film is only 5 to 30nm, so the metal film has good light transmittance. Compared with the prior art, the method has the advantages of simple manufacturing process, low cost of raw materials and good light transmittance, is suitable for mass production and has very wide market prospect.

The invention discloses a perovskite-type solar cell and a preparation method. The perovskite-type solar cell sequentially consists of a transparent conductive substrate, a dense electron transmission layer, a composite light absorption layer and a metal electrode layer, wherein the composite light absorption layer is formed by a core shell structure where perovskite wraps P-type semiconductor quantum dots. Because the composite light absorption layer of the solar cell employs the core shell structure where perovskite wraps P-type semiconductor quantum dots and the perovskite fully contacts with the quantum dots, the contact area of the quantum dots with a perovskite structural layer is increased. Moreover, the advantage that the perovskite can be used as a hole transmission layer is employed, thereby improving the efficiency of light hole separation, and improving the photoelectric conversion efficiency of the cell.

The invention discloses an epoxy-resin-based high-dielectric composite material and a preparation method thereof. According to the composite material, epoxy resin serves as a base body, modified barium titanate serves as filler, and the modified barium titanate is modified barium titanate BTNC doped with niobium pentoxide and cobaltosic oxide. The modified barium titanate BTNC is fully mixed with epoxy resin and a curing agent, heating and curing are conducted, and the BTNC / epoxy resin dielectric composite material is obtained. Compared with an epoxy resin composite material filled with barium titanate which is not modified, the composite material has a higher dielectric constant, lower dielectric consumption and better temperature stability.

The invention relates to a preparation method of composite sol and a method for producing solar battery packaging glass by using the composite sol. The preparation method of composite sol comprises the following steps of: mixing silica-alkoxides, water, basic catalysts and alcohol organic solvents in the volume ratio of 1-100: 0.1-10: 0.01: 1:3-300 to obtain A; adjusting the pH of the A to 8-10; adding inhibitors and dispersing agents in the A and then ageing 1d-10d to obtain a first sol; adding acidic catalysts, the inhibitors and stabilizers in the first sol to form B; adjusting the pH of the B to 2-5; adding metal alkoxides or metal salts in the B and then ageing 5d-20d to obtain a second sol; dissolving the second sol, aqueous silane coupling agents and wetting flatting agents for coatings in mixed environmental-protection solvents and then stirring at least for 0.5h to prepare the compound sol. The preparation method of the composite sol has the advantages of simple process and low cost and can greatly reduce the cost of a coating material used in plating anti-reflection films, and the composite sol coating material basically has no water absorbency so that the prepared anti-reflection films keep higher light transmittance.

The invention discloses an alkaline graphene-nickel electroplating liquid, and a preparation method and an application thereof. The electroplating liquid comprises a nickel salt, a complexing agent, water as a solvent, a reducing agent, a stabilizer, graphene and the like; the graphene is uniformly dispersed in the electroplating liquid, and the electroplating liquid is alkaline. A method for preparing a graphene-nickel composite plating layer by using the electroplating liquid comprises the steps that a to-be-electroplated workpiece as a cathode and a pure nickel piece as an anode are placed in the electroplating liquid and subjected to electroplating operation, and thus the plating layer is formed on a metal surface of the workpiece. In the electroplating liquid, any surfactant does not require to be added, and graphene can be uniformly dispersed and stably exist; with use of the electroplating liquid, the graphene-nickel composite plating layer is formed by means of a simple electrodeposition process, no complex equipment is required, the process is simple and controllable, the cost is low, the electroplating liquid is suitable for production with large area, the obtained plating layer is smooth and compact, the graphene is uniformly distributed, and the obtained plating layer has excellent comprehensive properties and has a better protection effect to a substrate.

The invention discloses a perovskite type solar energy battery with a quantum dot size performing gradient change and a preparation method. The perovskite type solar energy battery consists of a transparent conductive substrate, a compact electronic transmission layer, a composite light-absorption layer and a metal electrode layer; the composite light-absorption layer consists of n layers of perovskite-wrapping P type semiconductor quantum dot core shell structures, the sizes of which can perform V type gradient changing. Because the light-absorption layer of the perovskite type solar energy battery adopts multiple layers of perovskite-wrapping P type semiconductor quantum point core shell structures with the quantum sizes performing V type gradient change, the invention can realize the fact that the composite material presents gradient distribution of the forbidden bandwidth on the vertical gradient through designing the quantum dot size V type form distribution, and expands the spectrum scope of the absorption layer. Besides, the invention can improve the interface electric field on the photocathode interface, promotes the separation of the photo-induced carrier under the electric field and improves the conversion efficiency of the photoelectron.

The invention provides a method for preparing a titanium dioxide nano tip array film for field emission, mainly comprising the following steps of: firstly, performing primary anodic oxidation on a swing-cleaned titanium sheet, and then removing the titanium dioxide nano-tube film attached to the titanium sheet through ultrasound; and next, loading the titanium sheet into the electrode again and performing secondary anodic oxidation, and then taking out the titanium sheet for cleaning through swinging to finally obtain the titanium dioxide nano tip array film. The method provided by the invention realizes the preparation of the titanium dioxide nano tip array film suitable for field emission. Compared with the traditional microelectronic field emission tip array, the method provided by the invention is simple, and preparation parameters are easy to control; and the tip of the array is sharp, which is advantageous for gaining field emission. Furthermore, the titanium dioxide nano tip array film annealed at high temperature previously has lower opening and threshold field intensity; and particularly, the sample annealed at 450 DEG C has the minimum opening and threshold field intensity and is obviously improved in field emission performance.

The invention relates to the technical fields of electronics and photoelectronic packaging, and discloses a ceramic insulating film heat-conducting substrate and a manufacturing method thereof. The surface of a metal substrate is cleaned and roughened, so the surface of the metal substrate becomes a concave-convex clean surface; a layer of ceramic insulating film is sprayed on the surface of the metal substrate by a plasma spraying or ultrasonic spraying method; and a metal electrode layer required is printed on the polished surface of the ceramic insulating film by a screen printing process. The method has the advantages of simple process, low manufacturing cost, good radiating effect and no micropore conduction.

The invention relates to the technical field of graphene manufacturing and application, in particular to a rapid preparation method for a graphene electrode. The method comprises the following steps of (s1) providing a substrate and carrying out pretreatment; (s2) coating the substrate with a silver nanowire and obtaining a silver nanowire conducting layer; (s3) further coating the silver nanowireconducting layer with silver nanowire-graphene composite hydrogel to obtain a silver nanowire-graphene oxide layer; and (s4) further coating the silver nanowire-graphene oxide layer with graphene oxide to obtain a graphene oxide layer. The conductivity of the silver nanowire is improved by using graphene; by adopting the structures of the silver nanowire, silver nanowire-graphene and the graphene, the adhesive force and the wettability of the graphene on the silver nanowire are strengthened, the adhesive force and the oxidation resistance of a silver nanowire coating and the substrate are improved at the same time and the service life is prolonged.

The invention discloses an NBT / PVDF three-layer structured composite material for energy storage and a preparation method of the NBT / PVDF three-layer structured composite material for the energy storage. NBT particle powder is prepared through a ball-milling method; PVDF is divided into three parts which are respectively dissolved in a solvent to obtain three PVDF solutions; the NBT particle powder is divided into two parts and respectively added to two PVDF solutions to obtain two NBT / PVDF stock solutions; the NBT / PVDF stock solutions, the PVDF solutions and the NBT / PVDF stock solutions are laminated and subjected to tape casting on a glass substrate sequentially by using a multi-layer tape casting process. A middle layer of the composite material is a pure PVDF polymer, and the two layers of the upper and lower layers are NBT / PVDF composite layers, dielectric ceramic particles are added in an upper-lower two-layer structure, the polarization intensity and energy storage density are used, and the middle layer uses the pure PVDF polymer to obtain high breakdown field strength.

The invention belongs to the technical field of photoelectrochemical sensors, and in particular relates to a gold nano particle-titanium dioxide nano wire array composite material as well as a preparation method and application thereof. The preparation method comprises the steps of adjusting the hydrolysis reaction rate through concentrated hydrochloric acid, wherien tetra-n-butyl titanate is taken as a titanium source and water is taken as a solvent under a hydrothermal system, and growing a titanium dioxide nano wire array on an FTO conductive glass-containing substrate; immersing the titanium dioxide nano wire array in a chloroauric acid solution, and heating and roasting the titanium dioxide nano wire array in air to obtain a gold nano particle-titanium dioxide nano wire composite structure; and performing chemical group and specific acceptor modification on the surfaces of gold nano particles to obtain the gold nano particle-titanium dioxide nano wire composite material. The composite material can be used for performing high-sensitivity bacterial toxin detection. The prepared photoelectrochemical sensor is low in cost, high in stability, high in photoelectric conversion efficiency and suitable for large-area production.

The invention relates to a method for pretreating a glass substrate. The method comprises the following steps of: immersing the glass substrate into a mixed solution of concentrated sulfuric acid and hydrogen peroxide for certain time; taking out, then carrying out ultrasonic cleaning by using deionized water, and then placing into a baking box for drying to obtain a glass substrate with a hydroxylated surface; placing the glass substrate with the hydroxylated surface into a mixed solution of 3-aminopropyl triethoxysilane and ethanol, standing, and reacting for certain time; taking out the glass substrate, blow-drying by using nitrogen, then placing into the baking box to dry for certain time, and cooling to room temperature to obtain an aminated glass substrate, namely the completely pretreated glass substrate. The manufacturing method of solar cell packaging glass comprises the following step of: preparing the solar cell packaging glass which has the advantages of good antireflection film adhesive force and good antireflection film layer hardness and abrasion resistant property by using the glass substrate with an amination pretreated surface as a base material and using modified silicon sol which contains an epoxy group as film coating liquid. The prepared solar cell packaging glass has the advantage that the antireflection film layer is difficult to desquamate in an aging environment.

The invention discloses a method for preparing a cuprous oxide thin film. The method includes the following steps of using a cleaned copper sheet as an anode, a platinum sheet as a cathode, and a 0.1-0.5mol / L sodium hydroxide aqueous solution as an electrolyte, and performing electrolysis reaction for 1-3 minutes under electrolysis conditions of 8-10V of direct current voltage and 0.5-1.0A of direct current; using a 0.01-0.05mol / L sodium hydroxide aqueous solution as an electrolyte, and performing electrolysis reaction for 40-120 minutes under electrolysis conditions of 2-5V of direct current voltage and 0.01-0.05A of direct current; finally, performing annealing. The method is simple in operation, easy to control, applicable to large-area production, and capable of achieving controllable growth of a structure and thickness of the cuprous oxide thin film, the prepared cuprous oxide thin film has a nanocrystalline structure with a crystalline grain size of 100-150nm, and improvement of photoelectricity converting efficiency of solar cells is facilitated.

The present invention discloses a phase change vanadium dioxide film prepared by a rapid thermal oxidation method. The purpose of the present invention is to overcome disadvantages of more regulation parameters, complex process, poor experiment controllability in the existing preparation method for a vanadium dioxide film with a phase change characteristic. With the present invention, a metal vanadium film with a sputtering time of 10-30 minutes is subjected to rapid thermal oxidation for 30-90 seconds (wherein the thermal insulation time is the rapid thermal oxidation time) at a temperature of 430-500 DEG C to obtain the material with the thermal induced phase transition characteristic, wherein the temperature increasing speed is 50 DEG C per second, the temperature decreasing time is less than 3 minutes, and the working gas is high purity oxygen or nitrogen-oxygen mixed gas during the rapid thermal oxidation process. The method of present invention has high repeatability, and is suitable for large scale production.

The invention belongs to the technical field of photoelectrochemical sensors, and in particular relates to a high-sensitivity glutathione photoelectrochemical sensor made from iridium oxide-ferriporphyrin-titanium oxide and a preparation method for the sensor. The photoelectrochemical sensor takes an iridium oxide-ferriporphyrin-titanium oxide nano wire array as a working electrode, an Ag / AgCl electrode as a reference electrode and a platinum wire as a counter electrode; a PBS (phosphate buffer solution) with the pH of 7.4 is used as reaction electrolyte; the irradiation light intensity is equal to the sunshine, and the irradiation sectional area is 0.02-0.06cm<2>; the lowest sensitivity is 10nM. The preparation method comprises the steps of preparing a titanium oxide nano wire by adopting a hydrothermal method, bonding upper ferriporphyrin through chemical coupling, finally performing chemical immersion deposition on iridium oxide to prepare the iridium oxide-ferriporphyrin-titanium oxide nano wire array, and then preparing the photoelectrochemical sensor. The raw materials of the photoelectrochemical sensor are readily available; the preparation method is simple, environmentally-friendly, low in cost, high in response speed, large in linear range, high in selectivity and favorable for popularization and application.

The invention discloses a method for growing a TiO2 nanowire thin film on the surface of a stainless steel wire screen. The method comprises the following steps of adding tetrabutyl titanate, diethanol amine, de-ionized water and cetyl trimethyl ammonium bromide into ethanol to form sol; coating the sol on the surface of the cleaned and dried stainless steel wire screen by utilizing a dipping-pulling method, soaking the stainless steel wire screen in a hydrogen peroxide solution containing melamine and nitric acid, reacting for 6-48 hours at 80 DEG C by taking titanium sponge as a titanium source, and maintaining the temperature for 1 hour at 450-550 DEG C, thus obtaining the TiO2 nanowire thin film growing on the surface of the wire screen. The method is simple and convenient and is low in cost; stainless steel wire carries are uniformly coated by the prepared titanium dioxide nanowire thin film, the combination is firm, and the method has a good industrial application prospect.

The invention belongs to the technical field of metal material surface treatment and discloses a preparation method for surface-wettability-controllable super-hydrophobic copper and an alloy thereof. The preparation method comprises copper or a copper alloy slice is placed in an aqueous solution containing thiocarbamide and disodium edetate dihydrate after pretreating, an electrodeposition reaction is conducted, and a super-hydrophilic surface with a rough structure is obtained; then the copper or the copper alloy slice is placed in an ethanol solution with tetradecanoic acid to be soaked, and the super-hydrophobic copper or a super-hydrophobic copper alloy of which the surface is subjected to self-assembly to generate a super-hydrophobic film is obtained; and the super-hydrophobic copper or the super-hydrophobic copper alloy is annealed for 5-20 min at the temperature of 250-400 DEG C and soaked in the ethanol solution with the tetradecanoic acid, and the surface-wettability-controllable super-hydrophobic copper and the alloy thereof are obtained. The surface wettability of the copper and the alloy thereof is controllable, the process of hydrophobic transformation can be rapidly finished, and an efficient and environmental-friendly method is provided for industrialized, rapid and large-area production of the super-hydrophilic metal surface.

The invention is applicable to the quantum dot light emitting diode and provides a white light QLED member and a preparation method.The white light QLED member comprises a substrate, a short wave length QLED member, a film encapsulation layer and a light taking-out layer. The short wave length QLED member is arranged on the surface of the substrate in a stacking manner; the film encapsulation layer is arranged on the short wave length QLED member in a stacking manner; the light taking-out layer is arranged on the side which is opposite to the side where the short wave length QLED member is arranged in a stacking manner, wherein the light taking-out layer contains electroluminescence quantum dots and polymers.

The invention relates to an electrochemical composite doping method of graphene. The method comprises steps as follows: Step 1, an electrolyte solution is prepared; Step 2, a copper foil substrate with graphene growing is soaked in the electrolyte solution, and a power supply is connected to be used as a working electrode; Step 3, the power supply is started, a layer of conductive macromolecules are electrically polymerized on the surface of the graphene attached to the copper foil substrate, and a composite structure of conductive macromolecules / graphene / copper foil is formed; Step 4, the conductive macromolecules / graphene / copper foil are taken out, soaked in a cleaning agent for rinsing and dried; Step 5, the conductive macromolecules / graphene are separated from the copper foil and transferred to a target substrate. The method has the beneficial effects as follows: the electrochemical polymerization method which is high in controllability, simple and easy to implement is adopted, a high-conductivity doped layer with uniform thickness is formed on the surface of the graphene in situ, and the uniform and stable doping effect is realized for the graphene; besides, a formed conductive macromolecule membrane can effectively support a graphene membrane and enhance the mechanical strength of the graphene membrane.

The invention discloses a self-repairing sensing chip and a preparation method thereof. The self-repairing sensing chip comprises a chip body with a micro channel therein; two ends of the micro channel are communicated with the outside through openings formed in the chip body, so that electrode interfaces can be formed; an electrode matched with the electrode interfaces is connected between the electrode interfaces; and the micro channel is filled with ionic liquid or nanoparticle doped ionic liquid. The self-repairing sensing chip of the invention is applied to the sensor field. After the self-repairing sensing chip of the invention is damaged by external factors, the sensing performance of the self-repairing sensing chip can be recovered, and the sensing performance can be like that of the undamaged self-repairing sensing chip. The self-repairing sensing chip can be filled with ionic liquid, so that a temperature sensor can be formed; the self-repairing sensing chip can be filled with acidified carbon nanotubes, so that a near infrared sensor can be formed; the self-repairing sensing chip can be filled with doped silicon dioxide coated ferroferric oxide nanoparticles, so that an alternating electromagnetic field sensor can be formed; and therefore, the self-repairing sensing chip has excellent expansibility. Technologies used in a preparation process are mature. Polymer self-repairing cost is low. Thermoplastic materials are adopted, so that the self-repairing sensing chip can be formed through direct printing and molding. The method is simple and can be applicable to large scale production.

The invention provides a graphene-laminated composite doping method, which comprises the following steps: (1) preparing an oxidant coating liquid; (2) coating the surface of a target substrate with an oxidant solution, and heating and drying to form an oxidant coating; (3) putting the target substrate coated with the oxidant into an airtight container, and heating to a certain temperature; (4) heating and gasifying a conductive polymer precursor, mixing with a carrier gas to introduce into the airtight container, and adsorbing a small molecular precursor to an oxidative coating to form a doping coating through polymerization; (5) soaking the doping coating with deionized water and drying the doping coating; and (6) transferring graphene into the target substrate with the doping coating, and furthermore, repeating the steps (2) to (5) on the graphene to form a second doping coating. A layer of doping coating with uniform and controllable thickness is formed on the surface of the target substrate in situ; the doping effect is uniform; in addition, the doping coating is stable, and is located between the graphene and the target substrate after being transferred; and the doping effect is stable and lasting.

The invention provides a CdS / Cu2S / Co-based photoelectrocatalytic material, comprising a substrate. The substrate is loaded with CdS, Cu2S and Co based cocatalysts, wherein CdS and Cu2S are compoundedto form a CdS / Cu2S heterojunction. The prepared novel visible-light-responsive CdS / Cu2S / Co-based photocatalytic material solves the problem of severe photo-corrosion of CdS, overcomes the problem of proneness of photo-generated electrons and holes to compounding, is greatly improved in photoelectrocatalytic activity and electrode stability, realizes high-efficiency stable photocatalytic decomposition of water, and has the characteristics of stable structure, high photocatalytic performance, etc. The results of photoelectric tests show that the photocurrent of a CdS / Cu2S / Co-Pi membrane electrode prepared in the invention is improved by 6 times compared with the photocurrent of a pure CdS membrane electrode.

The invention discloses a Cu2ZnSnS4 / a-Si heterojunction solar cell and a manufacturing method thereof, and belongs to the technical field of solar cell device design and novel materials. The solar cell has two structures, wherein the first structure is a heterogeneous p-i-n junction composed of a p-type layer, an i-type layer and an n-type layer, the p-type layer is copper zinc tin sulfide (CZTS), and the first structure is characterized in that the i-type layer and the n-type layer are both alpha-Si, and a transparent conductive electrode is deposited on the n-type layer. The second structure is a heterogeneous p-n junction composed of the i-type layer and the n-type layer, the p-type layer is CZTS, and the second structure is characterized in that the n-type layer is alpha-Si, and a transparent conductive electrode is deposited on the n-type layer. The solar cell is novel in structure, completely free of poison and low in price, and has wide application prospect and large commercial value.

A sensing apparatus that includes a plurality of sensing pixels is provided. The sensing pixels are arranged in an array, and each of the sensing pixels includes an active device and a sensing device. The sensing device is electrically connected to the active device, and the sensing device includes a first electrode layer, an amorphous silicon layer, a second electrode layer, and a graphene layer. The amorphous silicon layer is located on the first electrode layer. The second electrode layer is located on the amorphous silicon layer and has an opening. The graphene layer is in contact with the second electrode layer and the amorphous silicon layer.

The invention belongs to the technical field of a photoelectric material and application, and particularly relates to a polythiophene derivative photoelectric material, and a preparation method and application thereof. Through the material, the density of polythiophene derivative alkyl side chains is reduced; electron withdrawing groups are introduced for reducing the HOMO energy grade, so that the regulation and control on the polymer energy grade, the dissolution performance, the aggregation and the crystallinity can be realized through changing different reactant proportioning ratio. Compared with P3HT, the material has the advantages that the crystallinity is improved; the adsorption spectrum generates red shift to a certain degree. The structure is simple; different repeated units arerealized; the synthesis is easy; the material is suitable for large-area production. In addition, the polythiophene derivative has the high absorption coefficient (105cm<-1>); the absorption capability on the sun light is enhanced; the requirements of a high-efficiency device can be met; the polythiophene derivative photoelectric material can be applied to the field of photoelectric materials oforganic solar batteries, perovskite solar batteries, organic thin film transistor and the like. The formula is shown in description.

The invention relates to anti-reflection self-cleaning photovoltaic coating glass which comprises a glass substrate. The coating glass is characterized in that the glass further comprises an antireflection coating layer and a self-cleaning coating layer, the antireflection coating layer is arranged on the surface of one side of the glass substrate, the self-cleaning coating layer is arranged on the antireflection coating layer, the thickness of the antireflection coating layer ranges from 70nm to 120nm, and the thickness of the self-cleaning coating layer ranges from 10nm to 50nm. The invention further relates to a preparation method of the anti-reflection self-cleaning photovoltaic coating glass.

The invention discloses transparent conductive glass and preparation method and application thereof. The transparent conductive glass comprises an amorphous substrate and a transparent conductive thinfilm, wherein the transparent conductive thin film is attached onto the amorphous substrate and is anatase phase (004)-oriented metal-doped titanium dioxide thin film. In the transparent conductive glass, the anatase phase (004)-oriented metal-doped titanium dioxide thin film with consistent grain growth direction and distribution is initially formed on the amorphous substrate, and the electricalconductivity of the transparent conductive glass is greatly improved; moreover, the transparent conductive glass is simple in preparation method and low in cost, is easy to operate and is suitable for production on a large scale; and the orientation process of an anatase phase (004) in the metal-doped titanium dioxide thin film prepared by the method is controllable, and different application demands can be satisfied.

The invention belongs to the technical field of solar cells, in particular to a Ti-doped titanium dioxide nanowire array capable of photolyzing water efficiently, as well as a preparing method and the application of the Ti-doped titanium dioxide nanowire array. The preparing method comprises the following steps: taking tetrabutyl titanate as a Ti source, water as a solvent, and stannic chloride as an Sn source under a hydrothermal system; adding concentrated hydrochloric acid to regulate and control the hydration reaction speed; growing a Ti-doped titanium dioxide nano-wire array on an electro-conductive glass substrate made of FTO (fluorine-doped tin oxide); and carrying out heat treatment in an argon-hydrogen mixture gas or a nitrogen-hydrogen mixture gas. The technology has the advantage that the conventional water photolyzing technology and the conventional photoelectric conversion technology are coupled, so as to improve the light absorption efficiency of a solar cell, and realize the one-step process of efficient water photolyzing and photoelectric photocurrent conversion. The invention further has the advantages that the raw material sources are wide; the preparing method is simple and environment-friendly; the cost is low; and the popularization and the application are more convenient.

The invention provides an inverted organic solar cell using aluminum and sodium chloride as a cathode buffer layer and a preparation method thereof for the first time. Compared with previous research, the inverted organic solar cell is novel in structure, simple in preparation process, low in cost and suitable for large-scale production. Al and NaCl compositely modify an ITO so as to reduce the work function of an ITO surface, improve an electrode surface contact characteristic, improve the hydrophobicity of the buffer layer surface, reduce the surface roughness of an active layer and obtain better surface morphology. An inverted structure device does not comprises an acidic hole transport material PEDOT: PSS and a low work function metal electrode so as to improve the stability of the organic solar cells. The prepared device can still maintain efficiency over 84% after 700 hours, which is 1.7 times than that of a traditional device. The two inorganic materials aluminum and sodium chloride are clean, free of pollution, rich in reserve in the natural world, low in price, and are ideal candidate materials of the cathode buffer layer of the organic solar cell.