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Phase change vanadium dioxide film prepared by rapid thermal oxidation method

A vanadium dioxide and thermal oxidation technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of unstable vanadium dioxide, poor experimental controllability, and many control parameters, etc. The effect of time and cycle reduction, less control parameters, and simple process

Inactive Publication Date: 2012-10-17
TIANJIN UNIV
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  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is, aiming at the extreme instability of vanadium dioxide, and aiming at the shortcomings of the general preparation method of vanadium dioxide film with phase change characteristics, many control parameters, complicated process and poor experimental controllability, provide A new method for preparing vanadium dioxide thin films with phase transition properties by rapid thermal oxidation

Method used

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  • Phase change vanadium dioxide film prepared by rapid thermal oxidation method
  • Phase change vanadium dioxide film prepared by rapid thermal oxidation method
  • Phase change vanadium dioxide film prepared by rapid thermal oxidation method

Examples

Experimental program
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Effect test

Embodiment 1

[0022] (1) Cutting the silicon wafer into small silicon wafers with a size of 2cm×2cm, soaking them in absolute ethanol solution, adopting standard silicon wafer cleaning process, ultrasonic cleaning, cleaning with deionized water, and drying;

[0023] (2) Place the sample cleaned in step (1) in the vacuum chamber of the DPS-Ⅲ ultra-high vacuum target magnetron sputtering coating machine, and vacuum the body by 2.5×10 -4 Pa; Introduce argon gas with a purity of 99.999%, the flow rate of argon gas is 50sccm, and adjust the working pressure to 2.0Pa; first perform pre-sputtering to remove dirt on the target surface, sputtering power is 165w, and start deposition after pre-sputtering Metal vanadium film, sputtering time is 10min;

[0024] (3) put the metal vanadium thin film of step (2) into the AG610 type rapid heat treatment equipment produced by Allwin21corp.USA company, the rapid thermal oxidation temperature is 430 ° C, the rapid thermal oxidation time is 90s; the heating ra...

Embodiment 2

[0028] The operation steps are the same as in Example 1, the process conditions of step (2) are: sputtering time 10min; the working gas in the rapid thermal oxidation process of step (3) is oxygen, the rapid thermal oxidation temperature is 470°C, and the rapid thermal oxidation time is 30s;

[0029] The vanadium dioxide film prepared in Example 2 has a measured sheet resistance of 197.2KΩ / □ at a temperature of 20°C, and a measured sheet resistance of 3.4KΩ / □ at a temperature of 80°C. The temperature coefficient of resistance of the vanadium oxide film is -1.63×10 -2 K -1 .

[0030] The resistance-temperature curve of embodiment 2 is as figure 2 shown by figure 2 It can be seen that the prepared vanadium dioxide thin film has phase change properties.

Embodiment 3

[0032] The operation steps are the same as in Example 1, the process conditions of step (2) are: sputtering time 30min; the working gas in the rapid thermal oxidation process of step (3) is oxygen, the rapid thermal oxidation temperature is 500°C, and the rapid thermal oxidation time is 40s;

[0033] The vanadium dioxide film prepared in Example 3 has a measured sheet resistance of 225.8KΩ / □ at a temperature of 20°C, and a measured sheet resistance of 0.53KΩ / □ at a temperature of 80°C. The temperature coefficient of resistance of the vanadium dioxide film is -1.66×10 -2 K -1 .

[0034] The resistance-temperature curve of embodiment 3 is as image 3 shown by image 3 It can be seen that the prepared vanadium dioxide thin film has phase change properties.

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Abstract

The present invention discloses a phase change vanadium dioxide film prepared by a rapid thermal oxidation method. The purpose of the present invention is to overcome disadvantages of more regulation parameters, complex process, poor experiment controllability in the existing preparation method for a vanadium dioxide film with a phase change characteristic. With the present invention, a metal vanadium film with a sputtering time of 10-30 minutes is subjected to rapid thermal oxidation for 30-90 seconds (wherein the thermal insulation time is the rapid thermal oxidation time) at a temperature of 430-500 DEG C to obtain the material with the thermal induced phase transition characteristic, wherein the temperature increasing speed is 50 DEG C per second, the temperature decreasing time is less than 3 minutes, and the working gas is high purity oxygen or nitrogen-oxygen mixed gas during the rapid thermal oxidation process. The method of present invention has high repeatability, and is suitable for large scale production.

Description

technical field [0001] The invention relates to a film preparation method, in particular to a method for preparing a vanadium oxide film with phase change properties. Background technique [0002] Vanadium dioxide has a reversible phase transition characteristic from a low-temperature semiconductor phase to a high-temperature metal phase near Tc=68°C, and its phase transition temperature close to room temperature makes the 2 The prepared films have a wide range of applications in the fields of smart windows, microbolometers, and optical switches. [0003] There are many methods for preparing vanadium dioxide thin films, mainly including sputtering, vacuum evaporation, pulsed laser deposition and sol-gel-gel methods. Among them, the sputtering method has the characteristics of high sputtering efficiency, uniform film formation, large area growth and no pollution. It is a common method used by many researchers at home and abroad to prepare vanadium dioxide thin films. This m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/58
Inventor 胡明武斌高旺后顺保吕志军
Owner TIANJIN UNIV
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