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69 results about "Molecular precursor" patented technology

Atomic layer deposition of silicon nitride using dual-source precursor and interleaved plasma

Atomic layer deposition using a precursor having both nitrogen and silicon components is described. The deposition precursor contains molecules which supply both nitrogen and silicon to a growing film of silicon nitride. Silicon-nitrogen bonds may be present in the precursor molecule, but hydrogen and / or halogens may also be present. The growth substrate may be terminated in a variety of ways and exposure to the deposition precursor displaces species from the outer layer of the growth substrate, replacing them with an atomic-scale silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer grows until one complete layer is produced and then stops (self-limiting growth kinetics). Subsequent exposure to a plasma excited gas modifies the chemical termination of the surface so the growth step may be repeated. The presence of both silicon and nitrogen in the deposition precursor molecule increases the deposition per cycle thereby reducing the number of precursor exposures to grow a film of the same thickness.
Owner:APPLIED MATERIALS INC

Method for the preparation of IV-VI semiconductor nanoparticles

A high temperature (on the order of about 90° C. or above) non-aqueous synthetic procedure for the preparation of substantially monodisperse IV-VI semiconductor nanoparticles (quantum dots) is provided. The procedure includes first introducing a first precursor selected from the group consisting of a molecular precursor of a Group IV element and a molecular precursor of a Group VI element into a reaction vessel that comprises at least an organic solvent to form a mixture. Next, the mixture is heated to a temperature of about 90° C. or above and thereafter a second precursor which is different from the first precursor and is selected from the group consisting of a molecular precursor of a Group IV element and a molecular precursor of a Group VI element is added into the heated mixture. The reaction mixture is then mixed to initiate nucleation of IV-VI nanocrystals and the temperature of the reaction mixture is controlled to provide substantially monodispersed IV-VI nanoparticles having a diameter of about 20 nm or less.
Owner:GLOBALFOUNDRIES INC +1

Formation of carbon and semiconductor nanomaterials using molecular assemblies

The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.
Owner:GLOBALFOUNDRIES U S INC

Organic pore-borne material generated by self-assembly of organic and organic, and preparation method

A process for preparing organic meso-porous material by organic-organic self-assembly features that the surfactant or organic high-molecular material is used as the structure guider, and the high-molecular precursor and said structure guider take part in organic-organic self-assembly. Said meso-porous material has ordered mesoporous arteries with different structures, high pore volume and high specific surface area.
Owner:FUDAN UNIV

Preparation method of molecularly-imprinted magnetic silica microsphere with hydrophilic external surface

The invention relates to a preparation method of a molecularly-imprinted magnetic silica microsphere with a hydrophilic external surface. The preparation method comprises the following steps: A, preparing a magnetic silica microsphere by taking Fe3O4 as magnetic particles, ethyl alcohol and distilled water as reaction solvents and TEOS (Tetraethyl Orthosilicate) as a molecular precursor; B, with anhydrous methylbenzene as a solvent, and reacting the magnetic silica microsphere with KH-550 to obtain an amination magnetic silica microsphere; C, with bisphenol A as a template molecule, TEOS and PTMS (Phenyltrimethoxysilane) as cross-linking agents and HCl as a catalyst, reacting with the amination magnetic silica microsphere, and eluting the template molecule to obtain a bisphenol A imprinted magnetic silica microsphere; and D, reacting the bisphenol A imprinted magnetic silica microsphere with KH-560, and performing hydrolysis to obtain the molecularly-imprinted magnetic silica microsphere with the hydrophilic external surface. The method has the advantages of simplicity in preparation, strong selectivity, excellent enrichment and high separation efficiency, is capable of effectively excluding biomacromolecules and reducing impurities of treated samples and can be widely used in separation and extraction of pretreatment of the samples.
Owner:HEBEI UNIVERSITY

Graphite-phase carbon and nitrogen compound powder, as well as preparation method and application thereof

The invention relates to graphite-phase carbon and nitrogen compound powder, as well as a preparation method and an application thereof. The powder uses an aromatic multimember heterocyclic ring composed of carbon and nitrogen elements as a repeat unit, and has a layered graphite phase structure. The preparation method of the powder comprises the following steps of: slowly heating an organic small-molecule compound containing carbon and nitrogen elements and other precursors to 450-600 DEG C, reacting at the temperature to form a yellow solid, washing the solid with an acidic solution and drying to obtain a target product. According to the invention, the product is acquired by carrying out a solid phase reaction under normal pressure and using inexpensive and easily available raw materials containing carbon and nitrogen elements as a single molecular precursor, the process is simple, the reaction atmosphere does not need to be adjusted and controlled, the equipment investment is low, the large-scale production can be realized, and the obtained product has multiple optional practical forms and can be widely applied in the industries of air purification, such as sewage treatment, self-cleaning coating, environmental purification including hydrogen preparation through utilizing water photolysis and CO2 photocatalytic reduction and the like, solar energy conversion and utilization, etc.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI

High-molecular mask plate and manufacturing method and application thereof

The invention discloses a high-molecular mask plate. The high-molecular mask plate comprises a bearing substrate, a sacrificial layer and a mask, and the sacrificial layer and the mask are sequentially arranged on the bearing substrate in an overlapped mode. The mask comprises a high-molecular membrane layer and a plurality of holes which are formed in the high-molecular membrane layer and penetrate through the high-molecular membrane layer, and magnetic nano-particles are doped in the high-molecular membrane layer. The invention further discloses a manufacturing method of the high-molecular mask plate. The manufacturing method comprises the steps that S1, the sacrificial layer is manufactured on the bearing substrate; S2, the sacrificial layer is coated with a high-molecular precursor doped with the magnetic nano-particles, curing is conducted for membrane forming, and a raw high-molecular membrane is formed; S3, ablation is conducted on the area, unshielded by a photomask mask plate,of the raw high-molecular membrane through the photomask mask plate in a laser scanning mode so as to form holes and the mask, and a high-molecular mask plate precursor is obtained; and S4, after thehigh-molecular mask plate precursor is cleaned and dried, the acting force between the bearing substrate and the mask is weakened, and the high-molecular mask plate is obtained. The invention furtherdiscloses application of the high-molecular mask plate to OLED manufacturing.
Owner:WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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