409 results about "Silicon nitride membrane" patented technology

Described are methods of making SiN materials on substrates, particularly SiN thin films on semiconductor substrates. Improved SiN films made by the methods are also included.

We have discovered that adding H₂ to a precursor gas composition including SiH₄, NH₃, and N₂ is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiN_x:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H₂ to the SiH₄/NH₃/N₂ precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiN_x:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm² and larger.

A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed.

A method for forming a silicon oxide film on a step formed on a substrate includes: (a) designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film to be selectively deposited or removed or reformed with reference to a non-target portion of the initial silicon nitride film resulting in the final silicon oxide film; and (b) forming the initial silicon nitride film and the final silicon oxide film on the surfaces of the step according to the topology designed in process (a), wherein the initial silicon nitride film is deposited by ALD using a silicon-containing precursor containing halogen, and the initial silicon nitride film is converted to the final silicon oxide film by oxidizing the initial silicon nitride film without further depositing a film wherein a Si—N bond in the initial silicon nitride film is converted to a Si—O bond.

We have discovered that is possible to tune the stress of a single-layer silicon nitride film by manipulating certain film deposition parameters. These parameters include: use of multiple (typically dual) power input sources operating within different frequency ranges; the deposition temperature; the process chamber pressure; and the composition of the deposition source gas. In particular, we have found that it is possible to produce a single-layer, thin (300 Å to 1000 Å thickness) silicon nitride film having a stress tuned to be within the range of about −1.4 GPa (compressive) to about +1.5 GPa (tensile) by depositing the film by PECVD, in a single deposition step, at a substrate temperature within the range of about 375° C. to about 525 ° C., and over a process chamber pressure ranging from about 2 Torr to about 15 Torr.

Gate trenches 108 are formed in a memory cell region M using a silicon nitride film 103 as a mask in a state in which the semiconductor substrate 100 in a P-type peripheral circuit region P and an N-type peripheral circuit region N is covered by a gate insulating film 101s, a protective film 102, and the silicon nitride film 103. A gate insulating film 109 is then formed on the inner walls of the gate trenches 108, and a silicon film 110 that includes an N-type impurity is embedded in the gate trenches 108. The silicon nitride film 103 is then removed, and a non-doped silicon film is formed on the entire surface, after which a P-type impurity is introduced into the non-doped silicon film on region P, and an N-type impurity is introduced into the non-doped silicon film on regions M and N.

A plasma etching method includes etching an etching target under plasma conditions using a process gas, the process gas including a saturated fluorohydrocarbon shown by the formula (1): C_xH_yF_z, wherein x is 3, 4, or 5, and y and z are individually positive integers, provided that y>z is satisfied. When etching a silicon nitride film that covers a silicon oxide film formed on the etching target, the silicon nitride film can be selectivity etched as compared with the silicon oxide film by utilizing the process gas including the specific fluorohydrocarbon under the plasma conditions.

This invention provides a very sensitive optical attenuator, which can be used to couple and attenuate optical signals between optical fibers with a wide range of attenuation level. Such an optical attenuator includes a flexible conductive membrane to be moved by an external force, such as electrostatic force, to achieve deformation of the conductive membrane. The conductive membrane can be formed, for example, by a vacuum deposited silicon nitride film. A thin metallic, conductive layer is then deposited on the flexible membrane to form a reflective mirror to receive and reflect incident optical signals. The semiconductor structure includes one or more spacing posts, with which the first structural member is to be joined and bonded. Electrodes are placed on the semiconductor structure in close proximity to the flexible membrane. At various areas of the semiconductor structure, additional spacing posts are added to cause deformation of the conductive membrane when a voltage is applied between the membrane and the electrodes on the semiconductor structure.

In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.

Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH₂Cl₂, SiCl₄, Si₂Cl₆, etc.) from an injector and feeding a mixed gas of monomethylamine (CH₃NH₂) and ammonia (NH₃) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).

The invention relates to a method for the production of a multilayer electrostatic lens arrangement with at least one lens electrode in general, a method for the production of a phase plate in particular as well as the lens arrangement, the phase plate and a transmission electron microscope with the phase plate.

The lens arrangement or the phase plate is produced from a thin self-supporting silicon nitride membrane which is fixed in a macroscopic chip with deposition of further layers. beam.

The central bore as well as the aperture opening are milled out by means of an ion

A method of making a patterned OLED layer or layers. The method uses a shadow mask having, for example, a free-standing silicon nitride membrane to pattern color emitter material with a feature size of less than 10 microns. The methods can be used, for example, in the manufacture of OLED microdisplays.

The invention discloses a silicon nitride membrane strained GeSn infrared LED device and a preparation method thereof. The infrared LED device comprises an Si substrate and a Ge buffer layer arranged on the silicon substrate, wherein the Ge buffer layer is successively provided with an aluminum electrode, a transverse P-I-N GeSn layer, a silicon nitride layer and an aluminum electrode from the left to the right, and a silicon nitride film is deposited above a GeSn P-I-N structure. According to the invention, the device and the method are compatible with a CMOS process, the problem of difficulty in growing a GeSn alloy with a high stannum ingredient content in the prior art is overcome, the stress size can be changed through adjusting the structure of a silicon nitride membrane so as to realize the demand of a GeSn material light source for different-wavelength light, the photoelectric conversion efficiency is quite high, the light stability is high, the processing is simple and convenient, and a concrete structure and a concrete implementation scheme are provided for realization of a light source on chip.

There is provided a liquid crystal display device that can obtain a high light utilization efficiency and a sufficient supplementary capacitance without reducing an aperture rate of pixels and is able to attain higher resolution. A silicon nitride film 22 that serves as a supplementary capacitance use transparent insulating film is formed under a pixel electrode 3. A common electrode 21 that is made of ITO and is connected to a potential common to an opposite electrode is formed under the silicon nitride film 22. The pixel electrode 3, the silicon nitride film 22 and the common electrode 21 constitute the supplementary capacitance, and the pixel electrode 3, the silicon nitride film 22 and the common electrode 21 are each made to have a film thickness such that a transmittance is increased by interference at a specified wavelength.

Disclosed is a method of forming a silicon nitride film which can form a silicon nitride film having a high film stress at a low process temperature. The method includes the steps of (a) supplying dichlorosilane into a reaction chamber containing a process object, thereby allowing chemical species originated from dichlorosilane as a precursor to be adsorbed on the process object; (b) hydrogenating chlorine contained in the chemical species, thereby removing the chlorine from the chemical species; and (c) supplying ammonia radicals into the reaction chamber, thereby nitriding the chemical species, from which the chlorine has been removed, by the ammonia radicals to, deposit resultant silicon nitride on the process object, wherein the steps (a), (b) and (c) are performed repeatedly for plural times in that order, thereby a silicon nitride film of a desired thickness is formed on a semiconductor wafer.