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201 results about "Microbolometer" patented technology

A microbolometer is a specific type of bolometer used as a detector in a thermal camera. Infrared radiation with wavelengths between 7.5–14 μm strikes the detector material, heating it, and thus changing its electrical resistance. This resistance change is measured and processed into temperatures which can be used to create an image. Unlike other types of infrared detecting equipment, microbolometers do not require cooling.

Method and apparatus for sensory substitution, vision prosthesis, or low-vision enhancement utilizing thermal sensing

A sensory substitution device according to an embodiment of the invention includes a thermal imaging array for sensing thermal characteristics of an external scene. The device includes a visual prosthesis adapted to receive input based on the scene sensed by the thermal imaging array and to convey information based on the scene to a user of the sensing device. The visual prosthesis is adapted to simultaneously convey to the user different visual information corresponding to portions of the scene having different thermal characteristics. One type of thermal imaging array includes a microbolometer imaging array, and one type of visual prosthesis includes a retinal implant. According to additional embodiments, an apparatus for obtaining thermal data includes a thermal detector adapted to sense thermal characteristics of an environment using a plurality of pixels. The apparatus also includes a pixel translator, operably coupled with the thermal detector, adapted to translate pixel data of the thermal detector to a lower resolution. The apparatus also includes an interface, operably coupled with the pixel translator, adapted to communicate the thermal characteristics of the environment to a user of the apparatus at a lower resolution than sensed by the thermal detector.
Owner:ADVANCED MEDICAL ELECTRONICS

Microbolometer for infrared detector or Terahertz detector and method for manufacturing the same

A microbolometer includes a micro-bridge structure for uncooling infrared or terahertz detectors. The thermistor and light absorbing materials of the micro-bridge structure are the vanadium oxide-carbon nanotube composite film formed by one-dimensional carbon nanotubes and two-dimensional vanadium oxide film. The micro-bridge is a three-layer sandwich structure consisting of a layer of amorphous silicon nitride base film as the supporting and insulating layer of the micro-bridge, a layer or multi-layer of vanadium oxide-carbon nanotube composite film in the middle of the micro-bridge as the heat sensitive and light absorbing layer of the microbolometer, and a layer of amorphous silicon nitride top film as the stress control layer and passivation of the heat sensitive film. The microbolometer and method for manufacturing the same can overcome the shortcomings of the prior art, improve the performance of the device, reduce the cost of raw materials and is suitable for large-scale industrial production.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

On-board non-uniformity correction calibration methods for microbolometer focal plane arrays

On-board non-uniformity correction calibration methods for a microbolometer focal plane array in a thermal camera are disclosed. The methods include performing first calculations in the processor unit of the thermal camera to generate and apply a set of coarse correction bias voltages to the detector elements. The method also includes performing calculations in the external computer based on image data collected by the thermal camera with the coarse correction bias voltages applied to the detector elements to generate a set of fine correction bias voltages. The method also includes downloading the fine correction bias voltages to the thermal camera and applying the fine correction voltages to the detector elements to establish a fine calibration of the microbolometer focal plane array.
Owner:OPTICS 1

Techniques for Tiling Arrays of Pixel Elements

Sub-arrays such as tiles or chips having pixel elements arranged on a routing layer or carrier to form a larger array. Through-chip vias or the like to the backside of the chip are used for connecting with the pixel elements. Edge features of the tiles may provide for physical alignment, mechanical attachment and chip-to-chip communication. Edge damage tolerance with minimal loss of function may be achieved by moving unit cell circuitry and the electrically active portions of a pixel element away from the tile edge(s) while leaving the optically active portion closer to the edge(s) if minor damage will not cause a complete failure of the pixel. The pixel elements may be thermal emitter elements for IR image projectors, thermal detector elements for microbolometers, LED-based emitters, or quantum photon detectors such as those found in visible, infrared and ultraviolet FPAs (focal plane arrays), and the like. Various architectures are disclosed.
Owner:SANTA BARBARA INFRARED +2

Wide spectral range hybrid image detector

An apparatus for detecting radiation of a plurality of wavelengths of the electromagnetic spectrum may be provided. The apparatus includes a substrate, a laser irradiated layer proximal to a first side of the substrate, and a microbolometer and at least one readout circuit proximal to a second side of the substrate in electrical communication with the laser irradiated layer. The substrate, laser irradiated layer, and the microbolometer are disposed and arranged such that radiation of a first wavelength is substantially detected by the laser irradiated layer, and radiation of a second wavelength is substantially detected by the microbolometer.
Owner:SIONYX

Microbolometer and preparation method thereof

The invention relates to a microbolometer, which comprises a microbridge structure, wherein a thermosensitive resistance material and an infrared absorption material layer in the microbridge structure are of a carbon nanometer tube-amorphous silicon composite film, the carbon nano tube-amorphous silicon composite film is formed by compounding an one-dimension carbon nano-tube and a two-dimensional amorphous silicon film, and the microbridge structure is of a three-layer sandwich structure; the most bottom layer is of a amorphous silicon nitride film which is used as a supporting and insulation material of the microbridge; the intermediate layer is of one layer or multiple layers of carbon nano-tube-amorphous composite film, the stress is opposite to the nature of the bottom layer silicon nitride film, and the carbon nano-tube-amorphous composite film is used as the thermosensitive layer and the infrared absorption layer of the microbolometer; and the surface layer is of an amorphous silicon nitride film, the stress of the amorphous silicon nitride film is opposite to the nature of the intermediate carbon nano-tube-amorphous composite film, and the amorphous silicon nitride film is used as a passivation layer of the inforared sensing film and a control layer of the stress. The microbolometer and the preparation method can overcome the weaknesses of the prior art, improves the working performance of the part, reduces the cost of the raw material and are applicable to the industrialized mass production.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Readout circuit of uncooled infrared focal plane array

The embodiment of the invention discloses a readout circuit of an uncooled infrared focal plane array. The readout circuit comprises a first bias circuit producing a detection output signal, a second bias circuit producing a first reference output signal, a first integration circuit and an analog-to-digital conversion circuit. The analog-to-digital conversion circuit includes a ramp signal generator which generates a ramp signal based on the output of a second reference microbolometer in a third bias circuit. According to the readout circuit, 'difference calculation' and 'amplification' of the detection output signal and the first reference output signal are completed by an integrator in an analog domain, 'ratio solution' is completed by an analog-to-digital converter in the process of analog-to-digital conversion, and analog-to-digital conversion and infrared detection are integrated more closely. Moreover, only one reference microbolometer is adopted in a column-level integrated readout channel, only one reference microbolometer is adopted in the chip-level ramp signal generator, and the readout circuit occupies a smaller area and has a smaller number of noise sources.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
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