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Transparent conductive glass and preparation method and application thereof

A technology of transparent conductive glass and transparent conductive film, which is applied to equipment for manufacturing conductive/semiconductive layers, cable/conductor manufacturing, conductive layers on insulating carriers, etc., which can solve the problem of increasing the complexity of preparation and the difficulty of substrate modification , limited preparation area, etc., to achieve the effect of simple preparation method, low cost, and improved electrical conductivity

Active Publication Date: 2018-02-16
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the method of epitaxial growth on epitaxial substrates can only be used in laboratories due to limited preparation area and high cost.
And with Ca 2 Nb 3 o 10 The method of modifying the substrate with nanosheets increases the complexity of the preparation, and the Ca 2 Nb 3 o 10 Nanosheets are often achieved by the pulling method, which increases the difficulty of substrate modification

Method used

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  • Transparent conductive glass and preparation method and application thereof
  • Transparent conductive glass and preparation method and application thereof
  • Transparent conductive glass and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] The transparent conductive film of this example is prepared by magnetron sputtering at an inclination angle of 30° to prepare a niobium-doped titanium dioxide film, and then post-annealing to obtain an anatase phase (004) preferentially grown Niobium-doped titanium dioxide thin films. details as follows:

[0042] (1) Titanium dioxide powder and niobium pentoxide powder are used as raw materials, the purity is 4N-5N, and the molar ratio of Ti:Nb is 9.5:0.5. After mixing, grind them to make them evenly mixed. Then put it into a high-temperature silicon-molybdenum furnace and pre-fire at 820°C for 3 hours; after completion, add 5mL of polyvinyl alcohol as a polymerizer, press it into a circular target with a thickness of 4.5mm and a diameter of 5cm with a powder tablet press, and then put it into a high-temperature silicon-molybdenum target. Sinter in a molybdenum furnace at 5°C / min to 1350°C for 5h. After cooling, fix a 0.5mm thick copper backing to prepare a niobium-dop...

Embodiment 2

[0048] The transparent conductive thin film in this example is prepared by magnetron sputtering at an inclination angle of 14° to prepare a tantalum-doped titanium dioxide film, and then post-annealing to obtain anatase (004) phase preferential growth Ta-doped TiO thin films. details as follows:

[0049] (1) Titanium dioxide powder and tantalum pentoxide powder are used as raw materials, the purity is 4N-5N, and the molar ratio of Ti:Ta is 9.4:0.6. After mixing, it is ground to make it evenly mixed. Then put it into a high-temperature silicon-molybdenum furnace and pre-fire at 820°C for 3 hours; after completion, add 5mL of polyvinyl alcohol as a polymerizer, press it into a circular target with a thickness of 4.5mm and a diameter of 5cm with a powder tablet press, and then put it into a high-temperature silicon-molybdenum target. Sinter in a molybdenum furnace at 5°C / min to 1350°C for 5h. After cooling, fix a 0.5mm thick copper backing to prepare a tantalum-doped titanium di...

Embodiment 3

[0056] The transparent conductive thin film of this example adopts the magnetron sputtering method to prepare a tantalum-doped titanium dioxide film with an inclination angle of 11°, and then performs a post-annealing treatment to obtain an anatase phase (004) preferentially grown. Tantalum-doped titanium dioxide films. details as follows:

[0057] (1) Titanium dioxide powder and tantalum pentoxide powder are used as the main raw materials, the purity is 4N-5N, and the molar ratio of Ti:Ta is 9:1. After mixing, it is ground to make it evenly mixed. Then put it into a high-temperature silicon-molybdenum furnace and pre-fire at 820°C for 3 hours; after completion, add 5mL of polyvinyl alcohol as a polymerizer, press it into a circular target with a thickness of 4.5mm and a diameter of 5cm with a powder tablet press, and then put it into a high-temperature silicon-molybdenum target. Sinter in a molybdenum furnace at 5°C / min to 1350°C for 5h. After cooling, fix a 0.5mm thick copp...

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Abstract

The invention discloses transparent conductive glass and preparation method and application thereof. The transparent conductive glass comprises an amorphous substrate and a transparent conductive thinfilm, wherein the transparent conductive thin film is attached onto the amorphous substrate and is anatase phase (004)-oriented metal-doped titanium dioxide thin film. In the transparent conductive glass, the anatase phase (004)-oriented metal-doped titanium dioxide thin film with consistent grain growth direction and distribution is initially formed on the amorphous substrate, and the electricalconductivity of the transparent conductive glass is greatly improved; moreover, the transparent conductive glass is simple in preparation method and low in cost, is easy to operate and is suitable for production on a large scale; and the orientation process of an anatase phase (004) in the metal-doped titanium dioxide thin film prepared by the method is controllable, and different application demands can be satisfied.

Description

technical field [0001] The present application relates to the field of transparent conductive films, in particular to a transparent conductive glass and its preparation method and application. Background technique [0002] With the rapid development of the flexible display industry worldwide, the demand for large-area transparent conductive oxide (abbreviated as TCO) glass substrates will maintain rapid growth for a long time. According to preliminary estimates, by 2020, the worldwide demand for TCO glass substrates will exceed 1.2 billion square meters. The transparent conductive films widely used in the industry currently mainly include three categories: indium tin oxide (abbreviated ITO), zinc aluminum oxide (abbreviated AZO) and fluorine-doped tin oxide (abbreviated FTO). Among them, the application of ITO is greatly limited due to the large amount of expensive indium material used. The photoelectric properties of FTO and AZO systems are close to the level of ITO, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/16H01B5/14H01B13/00
CPCH01B1/16H01B5/14H01B13/00H01B13/0016H01B13/0026
Inventor 杨晓杨潘锋梁军闵煜鑫
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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