73 results about "Zn doped" patented technology

In certain example embodiments, a coated article includes a Zn-doped zirconium based layer before heat treatment (HT). The coated article is heat treated sufficiently to cause the Zn-doped zirconium based layer to transform into a Zn-doped zirconium oxide based layer that is scratch resistant and / or chemically durable. The doping of the layer with Zn has been found to improve scratch resistance and / or corrosion resistance.

The invention discloses a Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector and preparation method thereof. The method specifically comprises the following steps: using a c-surface sapphire single crystal as the substrate, using Zn-doped beta-Ga2O3 film (Zn: Ga2O3) preferentially grown along crystal plane as shown in the description through magnetron sputtering growth as a light absorbing layer, and sputtering an Au / Ti interdigital electrode on the light absorbing layer as a collecting electrode of a photon-generated carrier, and preparing to acquire the Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector. The speed of photoresponse of the Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector through the Zn doping, the Zn particles with specific number are placed around the light-up circle of the Ga2O3 target to grow the Zn: Ga2O3 film with specific concentration, and the method is simple. A commercial preparation method is used for growing the film through the magnetron sputtering, the process is strong in controllability, and easy to operate; the obtained film is compact in surface, stable and uniform in thickness, capable of being prepared in large scale, and good in repeatability. The Zn: Ga2O3 film-based MSM structure solar-blind ultraviolet photoelectric detector prepared through the invention has potential application prospect in the solar-blind ultraviolet detection field.

The invention discloses a Ag, Cu and Zn doped nanometer titanium dioxide composite antibacterial agent and a preparation method thereof. The method uses n-butyl titanate as a titanium source material, and employs a sol-gel method to conduct hydrolysis polycondensation reaction on n-butyl titanate under certain reaction conditions, so as to form alcogel with particular space network structure. In the sol / gel reaction process, a proper amount of silver ion, copper ion and zinc ion are added while adding tetraethyl orthosilicate, thereby forming a mixed gel, which is subjected to drying and sintering to obtain the silver, copper and zinc doped nanometer titanium dioxide composite antibacterial powder. The composite antimicrobial agent prepared by the method provided by the invention has no adverse effect on the melt crystallization temperature, crystallinity and processing properties of polymer; the composite antibacterial agent can used in antibacterial polyethylene plastic products, and has antibacterial rate to Escherichia coli and Staphylococcus aureus higher than 99.99%, and bacteriostasis on all kinds of molds of grade 0. The composite antibacterial agent does not change color under natural light conditions.

The invention discloses a Zn-doped Ge2Sb2Te5 phase-change storage film material and a preparation method of the material. The Zn-doped Ge2Sb2Te5 phase-change storage film material is characterized in that the material has a chemical structural formula of Znx(Ge2Sb2Te5)100-x, wherein x is larger than 0 and smaller than 20. The preparation method comprises: selecting a quartz plate or a silicon oxide plate as a substrate in a magnetron sputtering coating system; mounting a Zn target in a magnetron DC sputtering target; mounting a Ge2Sb2Te5 target in a magnetron radio sputtering target; pumping air in a magnetron sputtering room to 1.6*10<-4>Pa; introducing high-purity argon gas until the pressure rises to 0.3Pa; controlling the sputtering power of the Zn target to 3 to 7W, and the sputtering power of the Ge2Sb2Te5 target to 75 to 130W; sputtering and coating at room temperature for 200 seconds to obtain the deposited phase-change storage film material; and placing the film sample in a quick annealing furnace to carry out annealing treatment to obtain the Zn-doped Ge2Sb2Te5 phase-change storage film material after thermal treatment. The Zn-doped Ge2Sb2Te5 phase-change storage film material provided by the invention has the advantages of high crystallization temperature, high thermal stability, high crystallization speed, long service life and low power consumption.

A Si substrate 1, a metal adhesion layer 2, a reflective metal film 3 comprising a multilayer of metallic material having a light reflectivity, a SiO2 film 4, an ohmic contact portion 5 provided at a predetermined position of the SiO2 film 4, a GaP layer 6 including a Mg-doped GaP layer 6A and a Zn-doped GaP layer 6B, a p-type GaInP interposed layer 7, a p-type AlGaInP cladding layer 8, an undoped MQW active layer 9, an n-type AlGaInP cladding layer 10, an n-type AlGaInP window layer 11, an n-type GaAs contact layer 12, a first electrode 13, and a second electrode 14 are formed. The ohmic contact portion 5 is distant from the light emitting part including the p-type AlGaInP cladding layer 8, the undoped MQW active layer 9 and the n-type AlGaInP cladding layer 10 by not less than 300 nm.

The invention discloses a method for preparing a zinc-doped iron trioxide composite structure gas-sensitive element and application thereof and belongs to the field of preparation of nanometer functional materials. The gas-sensitive element is a nanocomposite material synthesized by taking MOFs as a template. The preparation method specifically comprises the following steps: preparing a Zn-doped MIL-88B nano spindle by adopting a one-step solvothermal method; performing centrifugal drying on the obtained product, calcining in an air atmosphere, and finally obtaining Zn-doped alpha-Fe2O3 nanocomposite material powder; further adding terpilenol into the obtained nano powder, uniformly grinding, smearing on a ceramic tube, sintering in a muffle furnace, thereby obtaining the gas-sensitive element. The gas-sensitive element has the gas-sensitive characteristics of low concentration detection, fast response, high stability and high selectivity and can be used for preparing semiconductor gas-sensitive sensors.

In certain example embodiments, a coated article includes a Zn-doped zirconium based layer before heat treatment (HT). The coated article is heat treated sufficiently to cause the Zn-doped zirconium based layer to transform into a Zn-doped zirconium oxide based layer that is scratch resistant and / or chemically durable. The doping of the layer with Zn has been found to improve scratch resistance and / or corrosion resistance.

The invention discloses a preparation method of a water-soluble Zn-doped CdTe quantum dot CdxZn1-xTe. The preparation method comprises the following steps of: mixing a cadmium salt and a zinc salt or oxides of cadmium and zinc with a water-soluble mercapto-compound in a water phase; injecting prepared tellurium hydride to obtain a CdxZn1-xTe precursor solution; putting the solution into a hydro-thermal reaction kettle; and reacting to obtain a CdxZn1-xTe fluorescent quantum dot. The method is implemented in a water phase, is safe, easy and convenient for operation, is easy for mass productionand is environmentally friendly; the obtained product has high performance; even Zn doping molar percentage (i.e., the molar percentage of Zn to Cd in CdxZn1-xTe) surpasses 70 percent, the obtained quantum dot has high fluorescent quantum yield and high light stability and can be widely applied to photoelectric conversion, luminous and display materials, biological detection and targeting tracing; and the content and the toxicity of Cd are greatly lowered.

The invention relates to the technical field of semiconductor lasers, and discloses an NPN (negative-positive-negative) heterojunction bipolar-junction transistor laser which comprises a substrate (1), a buffer layer (2), a lower cladding layer (3), a sub-collector layer (4), a collector layer (5), a base layer (6), a quantum well active region layer (7), an emitter layer (8), an upper cladding layer (9) and a contact layer (10), wherein the quantum well active region layer is positioned between the base layer and the emitter layer, which reduces the dispersion of impurity Zn doped in the base layer to an active region on the one hand and decreases the dispersion of the impurity Zn doped in the base layer to the emitter layer on the other hand, thereby being beneficial to improving the optical and the electrical properties of elements. One part of electrons injected from an emitter illuminates in a radiative recombination way in the quantum well active region layer and the other part is collected by the collector layer to form a collector current.

The invention discloses a method for preparing a Zn-doped p-type beta-Ga2O3 nanowire according to a chemical vapor deposition method. The method provided by the invention comprises the following steps: carrying out evaporation to form a metal catalyst layer which is 1-50 nm thick on a cleaned substrate; sufficiently mixing a Ga source and a Zn source according to a certain mass ratio to prepare a reaction source material; putting the reaction source material and the substrate on which the metal catalyst layer is formed through evaporation into a quartz boat, and then putting the quartz boat into a high-temperature heating zone in a chemical vapor deposition system growth chamber, wherein the substrate is positioned in the downstream direction of gas flows and 1-2 cm away from the reaction source material, injected high-purity argon gas is carrier gas, and the argon gas flux is 50-500 ml / min; when the heating temperature reaches 600-1100 DEG C, injecting oxygen and keeping the oxygen flux of 1-5 ml / min for 15-30 minutes; stopping the oxygen injection, keeping the argon gas flux, cooling to 100 DEG C and below, and taking out an obtained sample.

The invention provides a solar cell composite film, a forming method therefor and a transparent conductive film forming composition, wherein the conversion efficiency of the solar cell is improved by reducing the contact resistance between a photoelectric conversion layer and the transparent conductive film and the serial resistance of the solar cell during the generation process. The invention is characterized in that conductive oxide particles are Sn or Zn doped indium oxide with In, Sn or Zn as constituent elements, or In, Sn, Al, Ga or Ge doped zinc oxide with In, Sn, Al, Ga or Ge as constituent elements, or In, Ga, Al or Sb-doped tin oxide with In, Ga, Al or Sb as constituent elements. The conductive oxide particles further comprise additive elements different from the constituent elements. The proportion of the additive elements is 0.01-20 mole %.

An epitaxial wafer for semiconductor light-emitting devices has an n-type substrate, on which are sequentially formed an n-type cladding layer, an active layer, a p-type cladding layer having Mg as a p-type dopant, and a p-type cap layer. The p-type cap layer has at least two Mg-doped and Zn-doped layers that are formed sequentially from the substrate side.

The invention belongs to the fields of nanometer materials and biomedical analysis chemistry, and particularly relates to a one-step method for synthesizing DNA functionalized Zn doped CdTe quantum dots. The quantum dot probe is prepared by connecting phosphorylated DNA to surface of quantum dot by coordination of sulfur and cadmium, and quantum dot surface can be connected with 1-2 DNA fragments. The preparation method is as below: in a synthesis process of quantum dots, phosphorylated DNA is added to obtain the DNA functionalized quantum dot probe through a one-step reaction. The probe can be used as a bifunctional nanometer material, has high fluorescence quantum yield, good biocompatibility and good dispersion, and can be used for detection of DNA fragment and protein, cell identification and tumor targeting. Compared with a traditional DNA marked quantum dot method, the preparation method provided by the invention is simple and low-cost, does not require expensive preparation facilities, can be accomplished in general chemistry laboratory, and can be widely used in fields of biological detection, cellular imaging, target tracing and disease diagnosis, etc.

An epitaxial wafer for a semiconductor light emitting device according to the present invention in which at least an n-type cladding layer formed with a mixed crystal made of an AlGaInP material, an active layer, a p-type Mg-doped cladding layer, and a p-type contact layer are stacked successively in that order on an n-type GaAs substrate, and the p-type contact layer is formed as at least two layers that are an Mg-doped contact layer and a Zn-doped contact layer stacked thereon when viewed from the n-type GaAs substrate, comprises a Zn-doped layer which is inserted between the p-type Mg-doped cladding layer and the p-type contact layer.

The invention relates to a photocatalytic nitrogen-fixation Zn-doped indium oxide photocatalyst material as well as a preparation method and application thereof. The photocatalyst material is an iron-manganese ore type oxide and has a spherical microstructure, the particle size is 20nm-80nm, and the molecular formula is In1-xZnxO3, wherein x is more than 0 and less than or equal to 0.15. The preparation method comprises the steps of preparing a carbon sphere by virtue of a hydrothermal method, ammoniating the carbon sphere so as to obtain a carbon sphere template, and synthesizing and preparing the photocatalyst material by virtue of the carbon sphere template through a solvothermal method. By doping Zn, the oxygen vacancy concentration of In2O3 of a cubic iron-manganese ore structure is adjusted and controlled, so that the performance of photocatalytic nitrogen-fixation synthesis ammonia is improved, the photocatalyst material has a good visible light absorption property and a relatively large specific surface area, is rich in oxygen vacancies and beneficial to the adsorption of nitrogen and the dissociation of N-N bonds, can present excellent chemical stability in the applicationof photocatalytic nitrogen-fixation synthesis ammonia and can be circularly utilized.

The invention discloses a photoelectronic material for a Zn-doped CuS superlattice nanoflower, a preparation method and an application thereof and belongs to the technical field of nano materials. The preparation method comprises the following steps of: adopting an alcohol solvothermal method and a coprecipitation and crystallization technology, and utilizing chemical reaction among sulfur powder, cuprous chloride and zinc acetate under the mild condition, thus realizing uniform distribution of doped atoms in the lattice by regulating the use amount of inorganic salt, and finally obtaining the Zn-doped CuS superlattice nanoflower. The prepared Zn-doped CuS superlattice nanoflower has the advantages that high crystalline completeness, monodispersity, perfect flower shape and the like, and due to the strong photoelectronic response characteristic, the photoelectronic material is suitable for being used as a response material of a photoelectronic device. The preparation method is simple and convenient in operation and low in cost of used materials, does not need any chemical additive, does not generate any toxic side products, is environmental-friendly and is convenient for industrial production of products with high additional value.

The invention provides an LED epitaxial growth method, which comprises the steps of: growing a layer of Zn-doped InGaN:Zn structure layer at first after growing a multiple-quantum-well layer, blocking electrons from migrating to a p-type GaN and preventing a large amount of electrons from leaking from the multiple-quantum-well layer to a P-type layer, thereby increasing an electron concentration of the multiple-quantum-well layer; and growing an AlGaN:Mg thin barrier layer with a high Mg-doping concentration to provide a high hole concentration, and effectively driving holes to be injected into the multiple-quantum-well layer so as to increase a number of electron hole pairs of the multiple-quantum-well layer. In addition, a two-dimensional hole gas is generated at an interface between the InGaN:Zn structure layer and the AlGaN:Mg thin barrier layer through utilizing the condition that lattices of AlGaN and InGaN are not matched, the hole transverse expansion efficiency is increased by means of the two-dimensional hole gas, the hole injection level of the multiple-quantum-well layer is further improved, the operating voltage of an LED is reduced, and the light emitting efficiency of the LED is improved.

The invention discloses a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a conductive glass layer, a compact titanium dioxide film, a porous titanium dioxide film, a methylamine lead iodine polycrystalline film, a hole-transport material layer and a metal electrode layer in sequence. The perovskite solar cell is characterized in that the porous titanium dioxide film is Zn-doped, and after doping, mole ratio between zinc atoms and titanium atoms is 0.1%-0.4%:1. The perovskite solar cell has the advantages that the Zn-doped porous titanium dioxide is utilized as a photo anode of the perovskite solar cell; a titanium dioxide conduction band can be changed through Zn-doping, and the titanium dioxide conduction band is allowed to move down, so that a gap between a methylamine lead iodine conduction band serving as a perovskite light absorption layer and Zn-doped porous titanium dioxide conduction band is enlarged, electrons are allowed to be easier to inject and pass, and photoelectric conversion efficiency of the perovskite solar cell can be improved.

The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which is a p-type dopant, into an undoped active layer, thus to realize a sharp doping profile. When a Zn-doped InGaAlAs layer having favorable crystallinity is provided between a C-doped InGaAlAs upper-side guiding layer and an undoped active layer, the influence of the C-doped InGaAlAs layer whose crystallinity is lowered can be reduced in the vicinity of the active layer. Further, the Zn diffusion from a Zn-doped InP cladding layer can be suppressed by the C-doped InGaAlAs layer.

The invention discloses a core-shell structure nanocrystal. The core-shell structure nanocrystal comprises a nanocrystal core, a Zn-doped first shell layer wrapping the nanocrystal core and a second shell layer wrapping the first shell layer; and the constitution of the nanocrystal core is Ag2S, the constitution of the first shell layer is ZnxAg2(1-x)S and the constitution of the second core shellis ZnS, wherein x is more than 0 and less than 1. The prepared core-shell structure nanocrystal has high luminous efficiency, the fluorescent emission peak can be continuously controlled between 1000and 1200, and the problem that the existing Ag2S nanocrystal is low in stability, easy to aggregate and low in luminous efficiency is solved.

An epitaxial wafer for semiconductor light-emitting devices has an n-type substrate, on which are sequentially formed an n-type cladding layer, an active layer, a p-type cladding layer having Mg as a p-type dopant, and a p-type cap layer. The p-type cap layer has at least two Mg-doped and Zn-doped layers that are formed sequentially from the substrate side.

A dye-sensitized solar cell and method for fabricating the same are provided. The dye-sensitized solar cell includes a photo electrode including a first electrode and a Zn-doped TiO2 porous layer disposed on the first electrode, wherein the Zn-doped TiO2 porous layer absorbs a dye. A second electrode is disposed opposite to the photo electrode, wherein the Zn-doped TiO2 porous layer is disposed between the first and second electrodes. An electrolyte is disposed between the photo electrode and the second electrode.

The invention provides a method for synthesizing zinc-doped copper-indium-sulfur (Zn-doped CuInS2) quantum dots. The method is characterized in that by using copper diethyldithiocarbamate as a copper source, indium diethyldithiocarbamate as an indium source, zinc diethyldithiocarbamate as a zinc source, oleylamine as a ligand and a solvent, one-step reaction is conducted to prepare the Zn-doped CuInS2 quantum dots. The Zn-doped CuInS2 quantum dots prepared according to the invention have the size of 4 to 5nm and a good photoelectric property, and are suitable for preparing a quantum dot sensitized solar cell. According to the invention, the zinc content of the quantum dots can be changed by changing the quantity of the zinc source; compared with pure CuInS2 quantum dots, the Zn-doped CuInS2 quantum dots obtained by the method have fewer internal defects; compared with a thermal injection method, the method provided by the invention has the advantages of simple and easy operation, simpler process, shorter synthesis cycle, good production controllability and repeatability and low cost, and the method provided by the invention is suitable for industrialized production, and has a wide application prospect in the solar cell.

The invention relates to a preparation method of doped spherical nanoscale Ni(OH)2, which solves the problem that the existing doped spherical nanoscale Ni(OH)2 has irregular shape. The preparation method comprises the following steps: adding alkane or cycloalkane in the mixed solution of n-hexanol and surfactant; stirring uniformly; adding a solution doped with metal ions and Ni<2+>, and stirring uniformly; adding an alkaline solution dropwise to adjust pH value to 8 to 11; separating precipitate; washing; calcining; and milling to obtain the final product. The nanoscale Ni(OH)2 prepared by the method has a spherical or nearly spherical shape, and a beta-type crystal form. The maximum 1C discharge specific capacity of a Cd-Ni (cadmium-nickel) battery prepared from Co-doped spherical nanoscale Ni(OH)2 reaches 245 mAh / g, which is improved by 16% in comparison with that of Cd-Ni battery prepared from doped nonspherical nanoscale Ni(OH)2, and the cycle specific capacity is also improved remarkably. The discharge specific capacities of Zn-doped spherical nanoscale Ni(OH)2 and Al-doped spherical nanoscale Ni(OH)2 are also improved.

The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which is a p-type dopant, into an undoped active layer, thus to realize a sharp doping profile. When a Zn-doped InGaAlAs layer having favorable crystallinity is provided between a C-doped InGaAlAs upper-side guiding layer and an undoped active layer, the influence of the C-doped InGaAlAs layer whose crystallinity is lowered can be reduced in the vicinity of the active layer. Further, the Zn diffusion from a Zn-doped InP cladding layer can be suppressed by the C-doped InGaAlAs layer.

The invention relates to a coating with infrared radiating effect, composed of infrared radiating powder and polyacrylic resin emulsion and other routine fillings and resistant; the infrared radiating powder is an alpha- cordierite structural powder obtained by making high-temperature burning or further mixing with stearic acid 14-28 weight shares and acrylic acid 3.5-7 weight shares and then drying after grinding the mixture of magnesium chloride 7.8-13 weight shares, zinc oxide 1.5-10.5 weight shares, alumina 33-34.5 weight shares, and quartz sand 48.7-51 weight shares. It is mainly used for building inner wall, and because of being added with Zn-doped cordierite system, its normal infrared radiation ratio in 2.5-25 mum waveband at normal temperature is not less than 0.90, able to effectively realize mildew resistant and bacteriostatic.

The invention discloses a Zn-doped Ni-MOF self-supporting composite electrode and a preparation method and application thereof. A NF / GF / Zn-doped Ni-MOF self-supporting composite electrode is preparedby vapor deposition and a solvothermal method. According to the invention, the NF / GF / Zn-doped Ni-MOF self-supporting composite electrode is prepared by the vapor deposition method and the solvothermalmethod. The self-supporting electrode of the three-phase composite structure is prepared for the first time, and the performance of the self-supporting electrode in a supercapacitor is researched. The results show that the electrode has high pseudocapacitance energy storage characteristics, and the maximum specific capacity at current density of 0.5 Ag<-1> can reach 2552Fg<-1>.

The invention discloses a method for synthesizing Zn doped with CdTe quantum dots in one step. The preparation method is simple, and time consumption is short. The method comprises the following steps: firstly mixing zinc salt with cadmium salt with aqueous-phase sulfhydryl compound in water liquor; adjusting the pH; adding tellurium source tellurite or tellurium dioxide liquor and reductant hydroboron; conveying the liquor into a hydrothermal reaction kettle; and heating for a segment of time to obtain the Zn doped with CdTe fluorescent quantum dots. The method adopts the tellurite or the tellurium dioxide liquor as the Te source, so that the operation steps are greatly simplified and the synthesis reaction time is reduced; as the synthesis is carried out in water phase, the method is easy to produce on large scales and is green and environmental-friendly; the quantum dots have high quantum yield and good optical properties, and the doped molar percentage of Zn in the quantum dots achieves 30%, and the actual input rate achieves 80%, so that the content of heavy metal Cd in the quantum dots is greatly reduced; and the method can be widely applied to biological detection, targeted tracer, photovoltaic conversion and lighting display material.

The invention discloses a manufacturing method of tunable quantum well laser epitaxial chips of the large lattice mismatch, which includes the following steps: step 1: selecting an InP (Indium Phosphide) substrate; sep 2: sequentially depositing an Inp buffer layer, a lower waveguide layer, a lower limiting layer, a quantum well layer, an upper limiting layer, an upper waveguide layer and an InP cover layer on the substrate; step 3: extending a Zn diffusion buffer layer from the InP cover layer; step 4: extending a Zn-doped InP upper cladding layer, a gradient layer and an InGaAs contact layer on the Zn diffusion buffer layer to complete the preparation. The manufacturing method of tunable quantum well laser epitaxial chips of the large lattice mismatch is capable of achieving a wide range of tune of the quantum well laser wavelength.

The present invention provided an epitaxial wafer for a light-emitting element in which Zn in a p-type cap layer, consisting of GaAs, is prevented from being diffused into a cladding layer and an active layer, and thereby to provide a light-emitting element by which stable high output operation and high temperature operation can be performed and high reliability LED and LD can be obtained. In the epitaxial wafer for the semiconductor light-emitting element in which at least an n-type clad layer 4, an active layer 6, p-type clad layers 7, 9, and a p-type cap layer 11 are sequentially laminated on an n-type substrate 1, and p-type dopant of the p-type clad layers 7, 9 is Mg, the p-type cap layer 11 consists of at least two layers, i.e. a Mg-doped layer 11a dna a Zn-doped layer 11b, sequentially formed from the substrate side.