73 results about "Zn doped" patented technology

The invention discloses a Zn-doped Ge2Sb2Te5 phase-change storage film material and a preparation method of the material. The Zn-doped Ge2Sb2Te5 phase-change storage film material is characterized in that the material has a chemical structural formula of Znx(Ge2Sb2Te5)100-x, wherein x is larger than 0 and smaller than 20. The preparation method comprises: selecting a quartz plate or a silicon oxide plate as a substrate in a magnetron sputtering coating system; mounting a Zn target in a magnetron DC sputtering target; mounting a Ge2Sb2Te5 target in a magnetron radio sputtering target; pumping air in a magnetron sputtering room to 1.6*10<-4>Pa; introducing high-purity argon gas until the pressure rises to 0.3Pa; controlling the sputtering power of the Zn target to 3 to 7W, and the sputtering power of the Ge2Sb2Te5 target to 75 to 130W; sputtering and coating at room temperature for 200 seconds to obtain the deposited phase-change storage film material; and placing the film sample in a quick annealing furnace to carry out annealing treatment to obtain the Zn-doped Ge2Sb2Te5 phase-change storage film material after thermal treatment. The Zn-doped Ge2Sb2Te5 phase-change storage film material provided by the invention has the advantages of high crystallization temperature, high thermal stability, high crystallization speed, long service life and low power consumption.

The invention discloses a method for preparing a zinc-doped iron trioxide composite structure gas-sensitive element and application thereof and belongs to the field of preparation of nanometer functional materials. The gas-sensitive element is a nanocomposite material synthesized by taking MOFs as a template. The preparation method specifically comprises the following steps: preparing a Zn-doped MIL-88B nano spindle by adopting a one-step solvothermal method; performing centrifugal drying on the obtained product, calcining in an air atmosphere, and finally obtaining Zn-doped alpha-Fe2O3 nanocomposite material powder; further adding terpilenol into the obtained nano powder, uniformly grinding, smearing on a ceramic tube, sintering in a muffle furnace, thereby obtaining the gas-sensitive element. The gas-sensitive element has the gas-sensitive characteristics of low concentration detection, fast response, high stability and high selectivity and can be used for preparing semiconductor gas-sensitive sensors.

The invention relates to the technical field of semiconductor lasers, and discloses an NPN (negative-positive-negative) heterojunction bipolar-junction transistor laser which comprises a substrate (1), a buffer layer (2), a lower cladding layer (3), a sub-collector layer (4), a collector layer (5), a base layer (6), a quantum well active region layer (7), an emitter layer (8), an upper cladding layer (9) and a contact layer (10), wherein the quantum well active region layer is positioned between the base layer and the emitter layer, which reduces the dispersion of impurity Zn doped in the base layer to an active region on the one hand and decreases the dispersion of the impurity Zn doped in the base layer to the emitter layer on the other hand, thereby being beneficial to improving the optical and the electrical properties of elements. One part of electrons injected from an emitter illuminates in a radiative recombination way in the quantum well active region layer and the other part is collected by the collector layer to form a collector current.

An epitaxial wafer for semiconductor light-emitting devices has an n-type substrate, on which are sequentially formed an n-type cladding layer, an active layer, a p-type cladding layer having Mg as a p-type dopant, and a p-type cap layer. The p-type cap layer has at least two Mg-doped and Zn-doped layers that are formed sequentially from the substrate side.

The invention belongs to the fields of nanometer materials and biomedical analysis chemistry, and particularly relates to a one-step method for synthesizing DNA functionalized Zn doped CdTe quantum dots. The quantum dot probe is prepared by connecting phosphorylated DNA to surface of quantum dot by coordination of sulfur and cadmium, and quantum dot surface can be connected with 1-2 DNA fragments. The preparation method is as below: in a synthesis process of quantum dots, phosphorylated DNA is added to obtain the DNA functionalized quantum dot probe through a one-step reaction. The probe can be used as a bifunctional nanometer material, has high fluorescence quantum yield, good biocompatibility and good dispersion, and can be used for detection of DNA fragment and protein, cell identification and tumor targeting. Compared with a traditional DNA marked quantum dot method, the preparation method provided by the invention is simple and low-cost, does not require expensive preparation facilities, can be accomplished in general chemistry laboratory, and can be widely used in fields of biological detection, cellular imaging, target tracing and disease diagnosis, etc.

An epitaxial wafer for a semiconductor light emitting device according to the present invention in which at least an n-type cladding layer formed with a mixed crystal made of an AlGaInP material, an active layer, a p-type Mg-doped cladding layer, and a p-type contact layer are stacked successively in that order on an n-type GaAs substrate, and the p-type contact layer is formed as at least two layers that are an Mg-doped contact layer and a Zn-doped contact layer stacked thereon when viewed from the n-type GaAs substrate, comprises a Zn-doped layer which is inserted between the p-type Mg-doped cladding layer and the p-type contact layer.

The invention relates to a photocatalytic nitrogen-fixation Zn-doped indium oxide photocatalyst material as well as a preparation method and application thereof. The photocatalyst material is an iron-manganese ore type oxide and has a spherical microstructure, the particle size is 20nm-80nm, and the molecular formula is In1-xZnxO3, wherein x is more than 0 and less than or equal to 0.15. The preparation method comprises the steps of preparing a carbon sphere by virtue of a hydrothermal method, ammoniating the carbon sphere so as to obtain a carbon sphere template, and synthesizing and preparing the photocatalyst material by virtue of the carbon sphere template through a solvothermal method. By doping Zn, the oxygen vacancy concentration of In2O3 of a cubic iron-manganese ore structure is adjusted and controlled, so that the performance of photocatalytic nitrogen-fixation synthesis ammonia is improved, the photocatalyst material has a good visible light absorption property and a relatively large specific surface area, is rich in oxygen vacancies and beneficial to the adsorption of nitrogen and the dissociation of N-N bonds, can present excellent chemical stability in the applicationof photocatalytic nitrogen-fixation synthesis ammonia and can be circularly utilized.

The invention discloses a photoelectronic material for a Zn-doped CuS superlattice nanoflower, a preparation method and an application thereof and belongs to the technical field of nano materials. The preparation method comprises the following steps of: adopting an alcohol solvothermal method and a coprecipitation and crystallization technology, and utilizing chemical reaction among sulfur powder, cuprous chloride and zinc acetate under the mild condition, thus realizing uniform distribution of doped atoms in the lattice by regulating the use amount of inorganic salt, and finally obtaining the Zn-doped CuS superlattice nanoflower. The prepared Zn-doped CuS superlattice nanoflower has the advantages that high crystalline completeness, monodispersity, perfect flower shape and the like, and due to the strong photoelectronic response characteristic, the photoelectronic material is suitable for being used as a response material of a photoelectronic device. The preparation method is simple and convenient in operation and low in cost of used materials, does not need any chemical additive, does not generate any toxic side products, is environmental-friendly and is convenient for industrial production of products with high additional value.

The invention discloses a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a conductive glass layer, a compact titanium dioxide film, a porous titanium dioxide film, a methylamine lead iodine polycrystalline film, a hole-transport material layer and a metal electrode layer in sequence. The perovskite solar cell is characterized in that the porous titanium dioxide film is Zn-doped, and after doping, mole ratio between zinc atoms and titanium atoms is 0.1%-0.4%:1. The perovskite solar cell has the advantages that the Zn-doped porous titanium dioxide is utilized as a photo anode of the perovskite solar cell; a titanium dioxide conduction band can be changed through Zn-doping, and the titanium dioxide conduction band is allowed to move down, so that a gap between a methylamine lead iodine conduction band serving as a perovskite light absorption layer and Zn-doped porous titanium dioxide conduction band is enlarged, electrons are allowed to be easier to inject and pass, and photoelectric conversion efficiency of the perovskite solar cell can be improved.

The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which is a p-type dopant, into an undoped active layer, thus to realize a sharp doping profile. When a Zn-doped InGaAlAs layer having favorable crystallinity is provided between a C-doped InGaAlAs upper-side guiding layer and an undoped active layer, the influence of the C-doped InGaAlAs layer whose crystallinity is lowered can be reduced in the vicinity of the active layer. Further, the Zn diffusion from a Zn-doped InP cladding layer can be suppressed by the C-doped InGaAlAs layer.

The invention discloses a core-shell structure nanocrystal. The core-shell structure nanocrystal comprises a nanocrystal core, a Zn-doped first shell layer wrapping the nanocrystal core and a second shell layer wrapping the first shell layer; and the constitution of the nanocrystal core is Ag2S, the constitution of the first shell layer is ZnxAg2(1-x)S and the constitution of the second core shellis ZnS, wherein x is more than 0 and less than 1. The prepared core-shell structure nanocrystal has high luminous efficiency, the fluorescent emission peak can be continuously controlled between 1000and 1200, and the problem that the existing Ag2S nanocrystal is low in stability, easy to aggregate and low in luminous efficiency is solved.

The invention relates to a preparation method of doped spherical nanoscale Ni(OH)2, which solves the problem that the existing doped spherical nanoscale Ni(OH)2 has irregular shape. The preparation method comprises the following steps: adding alkane or cycloalkane in the mixed solution of n-hexanol and surfactant; stirring uniformly; adding a solution doped with metal ions and Ni<2+>, and stirring uniformly; adding an alkaline solution dropwise to adjust pH value to 8 to 11; separating precipitate; washing; calcining; and milling to obtain the final product. The nanoscale Ni(OH)2 prepared by the method has a spherical or nearly spherical shape, and a beta-type crystal form. The maximum 1C discharge specific capacity of a Cd-Ni (cadmium-nickel) battery prepared from Co-doped spherical nanoscale Ni(OH)2 reaches 245 mAh/g, which is improved by 16% in comparison with that of Cd-Ni battery prepared from doped nonspherical nanoscale Ni(OH)2, and the cycle specific capacity is also improved remarkably. The discharge specific capacities of Zn-doped spherical nanoscale Ni(OH)2 and Al-doped spherical nanoscale Ni(OH)2 are also improved.

The invention discloses a manufacturing method of tunable quantum well laser epitaxial chips of the large lattice mismatch, which includes the following steps: step 1: selecting an InP (Indium Phosphide) substrate; sep 2: sequentially depositing an Inp buffer layer, a lower waveguide layer, a lower limiting layer, a quantum well layer, an upper limiting layer, an upper waveguide layer and an InP cover layer on the substrate; step 3: extending a Zn diffusion buffer layer from the InP cover layer; step 4: extending a Zn-doped InP upper cladding layer, a gradient layer and an InGaAs contact layer on the Zn diffusion buffer layer to complete the preparation. The manufacturing method of tunable quantum well laser epitaxial chips of the large lattice mismatch is capable of achieving a wide range of tune of the quantum well laser wavelength.

The present invention provided an epitaxial wafer for a light-emitting element in which Zn in a p-type cap layer, consisting of GaAs, is prevented from being diffused into a cladding layer and an active layer, and thereby to provide a light-emitting element by which stable high output operation and high temperature operation can be performed and high reliability LED and LD can be obtained. In the epitaxial wafer for the semiconductor light-emitting element in which at least an n-type clad layer 4, an active layer 6, p-type clad layers 7, 9, and a p-type cap layer 11 are sequentially laminated on an n-type substrate 1, and p-type dopant of the p-type clad layers 7, 9 is Mg, the p-type cap layer 11 consists of at least two layers, i.e. a Mg-doped layer 11a dna a Zn-doped layer 11b, sequentially formed from the substrate side.