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Photoelectronic material for Zn-doped CuS superlattice nanoflower, preparation method and application thereof

A superlattice and nanoflower technology, applied in the field of nanomaterials, can solve the problems of difficult industrial production, complex process equipment, strict operation requirements, etc., and achieve the effects of simple operation, simple process and wide application prospects.

Inactive Publication Date: 2016-01-27
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The common feature of these methods is to achieve a balanced distribution of dopant atoms in the lattice through the gas-liquid-solid growth process (VLS), which requires multiple alternate changes of reactants under the condition of reactant gasification, process equipment Complex, strict operation requirements and a lot of energy consumption, it is difficult to realize industrial production

Method used

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  • Photoelectronic material for Zn-doped CuS superlattice nanoflower, preparation method and application thereof
  • Photoelectronic material for Zn-doped CuS superlattice nanoflower, preparation method and application thereof
  • Photoelectronic material for Zn-doped CuS superlattice nanoflower, preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044]Add 0.5mmol CuCl, 0.75mmol S powder and 15mL absolute ethanol to a polytetrafluoroethylene liner of a 20mL reaction kettle, and then seal the reaction kettle after magnetic stirring for 10 minutes, place it in a constant temperature drying oven, control the temperature at 180°C, and react at a constant temperature 24 hours, naturally cooled to room temperature. The obtained product was washed twice with distilled water and absolute ethanol successively, separated by centrifugation, and dried at 60° C. for 30 minutes in a vacuum oven (0.1 Pa) to obtain a black solid powder product.

[0045] Product analysis results: the chemical composition of the product is pure CuS (Cu:S=50.2:49.8) through EDS elemental analysis. Powder X-ray diffraction (XRD) analysis shows that the pure CuS product is a hexagonal crystal phase, and the unit cell parameters Raman spectrum active mode vibration frequency peak appears at 474cm -1 , which is consistent with the vibration frequency of...

Embodiment 2

[0047] Add 0.25mmol CuCl, 0.25mmol Zn(Ac) 2 2H 2 O, 0.75mmol S powder and 15mL absolute ethanol were stirred magnetically for 10 minutes, sealed the reaction vessel, placed in a constant temperature drying oven, controlled at a temperature of 180°C, reacted at a constant temperature for 24 hours, and cooled naturally to room temperature. The obtained product was washed twice with distilled water and absolute ethanol successively, separated by centrifugation, and dried at 60° C. for 30 minutes in a vacuum oven (0.1 Pa) to obtain a black solid powder product.

[0048] Product analysis results: The chemical composition of the product is Zn by EDS elemental analysis 0.49 Cu 0.51 S (Zn:Cu:S=24.7:25.1:50.2, Zn / (Zn+Cu)=49.6%). The scanning electron microscope (SEM) photo observation product has a flower-like micromorphology, the particle size of the flower is about 1 μm, and the petal thickness is about 30 nm. Powder X-ray diffraction (XRD) analysis shows that all X-ray diffracti...

Embodiment 3

[0050] Add 0.45mmol CuCl, 0.05mmol Zn(Ac) 2 2H 2 O, 0.75mmol S powder and 15mL absolute ethanol were stirred magnetically for 10 minutes, sealed the reaction vessel, placed in a constant temperature drying oven, controlled at a temperature of 180°C, reacted at a constant temperature for 24 hours, and cooled naturally to room temperature. The obtained product was washed twice with distilled water and absolute ethanol successively, separated by centrifugation, and dried at 60° C. for 30 minutes in a vacuum oven (0.1 Pa) to obtain a black solid powder product.

[0051] Product analysis results: The chemical composition of the product is Zn by EDS elemental analysis 0.06 Cu 0.94 S (Zn:Cu:S=3.2:46.9:49.9, Zn / (Zn+Cu)=6.4%). The scanning electron microscope (SEM) photo observation product has a flower-like micromorphology, the particle size of the flower is about 1 μm, and the petal thickness is about 30 nm. Powder X-ray diffraction (XRD) analysis shows that all X-ray diffraction...

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Abstract

The invention discloses a photoelectronic material for a Zn-doped CuS superlattice nanoflower, a preparation method and an application thereof and belongs to the technical field of nano materials. The preparation method comprises the following steps of: adopting an alcohol solvothermal method and a coprecipitation and crystallization technology, and utilizing chemical reaction among sulfur powder, cuprous chloride and zinc acetate under the mild condition, thus realizing uniform distribution of doped atoms in the lattice by regulating the use amount of inorganic salt, and finally obtaining the Zn-doped CuS superlattice nanoflower. The prepared Zn-doped CuS superlattice nanoflower has the advantages that high crystalline completeness, monodispersity, perfect flower shape and the like, and due to the strong photoelectronic response characteristic, the photoelectronic material is suitable for being used as a response material of a photoelectronic device. The preparation method is simple and convenient in operation and low in cost of used materials, does not need any chemical additive, does not generate any toxic side products, is environmental-friendly and is convenient for industrial production of products with high additional value.

Description

technical field [0001] The invention belongs to the technical field of nanomaterials, and in particular relates to a zinc-doped CuS superlattice nanoflower optoelectronic material and a preparation method and application thereof. Background technique [0002] In the field of optoelectronic applications, 3D flower-like nanostructure materials have obvious advantages over 1D nanowires and 2D nanosheets. transport of fluids. For more than 20 years, people have successfully prepared many semiconductor flower-like nanocrystals through nanotechnology, such as iron oxide nano-snow, zinc oxide nano-lilac, lead sulfide nano-albizia, titanium oxide nano-camellia, copper oxide nano-peony, sulfide Copper nanoroses, nickel sulfide nanoflowers, cobalt sulfide nanoflowers, etc. However, in the application of nano-optoelectronic devices, three-dimensional flower-like nanostructure materials still face the problem of high recombination probability of photogenerated electrons and holes. In...

Claims

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Application Information

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IPC IPC(8): C01G3/12
CPCC01G3/006C01P2002/72C01P2002/80C01P2002/82C01P2002/85C01P2004/03C01P2004/62
Inventor 高远浩王培培李品将张校飞雷岩郑直
Owner XUCHANG UNIV
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