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31 results about "Cu doped" patented technology

Cu-doped Type-II core-shell structure white light quantum dot material and preparation method thereof

The invention discloses a Cu-doped Type-II core-shell structure white light quantum dot material and a preparation method thereof, which belong to the technical field of semiconductor nanometer material preparation. The core in a quantum dot structure is a Cu-doped CdS quantum dot, the core is coated with a ZnSe quantum wall to form a type-II core-shell structure which is then coated with a broad-band gap ZnS passivation protective layer, and the final quantum dot is a Cu:CdS / ZnSe / ZnS structure. The quantum dot material has continuous spectrum white light, large Stokes shift, a low self-absorption factor, high fluorescence quantum efficiency and a high color rendering index; the distribution of light colors in space is uniform; different chromaticity coordinates and color temperature can be adjusted by means of adjusting the size of the inner core CdS, the thickness of the water outer ZnSe and the doping concentration of Cu. The quantum dot material does not have light color distortion within a certain temperature range; besides, the quantum dot still has excellent light stability after being excited for a long time by blue light.
Owner:JILIN UNIV

Aqueous-phase synthesis method of Cu-doped Zn1-xCdxS quantum dot and core/shell structure thereof

The invention discloses an aqueous-phase synthesis method of a Cu-doped Zn1-xCdxS quantum dot and a core / shell structure thereof. The method comprises the following steps of directly dissolving cadmium ion sources, copper ion sources and zinc ion sources into water, adding a stabilizer, namely sulfhydryl compound, adding a sulfur source under a certain pH value and heating under the protection of inert gases to prepare the Cu-doped Zn1-xCdxS quantum dot; jacketing the Cu-doped Zn1-xCdxS quantum dot with ZnS through a secondary injection method to obtain a Cu:Zn1-xCdxS / ZnS core / shell quantum dot. The method has the advantages of low cost, good operability, good repeatability and low requirements on equipment conditions. The Cu:Zn1-xCdxS / ZnS core / shell quantum dot prepared by the method has excellent luminescence property and good fluorescence stability, is suitable for optoelectronic devices such as solid state lighting, solar cells, displays and the like and is also suitable for being widely applied in bio-labeling, imaging and the like due to good water solubility.
Owner:GUIZHOU NORMAL UNIVERSITY

Preparation of Cu doped MnO2 mesoporous material and application of material in Fenton-like water treatment advanced oxidation technology

The invention provides the preparation of a Cu doped MnO2 mesoporous material and the application of the material in the Fenton-like water treatment advanced oxidation technology, and belongs to the fields of water treatment technologies and environment function materials. The property of the Cu doped MnO2 mesoporous material can be powder or particle; potassium permanganate, CuSO4 5H2O and maleic acid are used as main materials; the Cu doped MnO2 mesoporous material is prepared; and the ability of degradation of the Fenton-like technology on benzotriazole is improved. In order to solve the problem that the existing conventional sewage treatment has a poor effect in removing new pollutant benzotriazole, the invention provides the Cu doped MnO2 mesoporous material to be used as a catalyst, and the mesoporous material is successfully applied to a Fenton-like reaction system, the defects of the traditional Fenton method are overcome, the reactive pH range is enlarged, the forming of sludge containing iron is avoided, and the catalyst can be reused.
Owner:BEIJING FORESTRY UNIVERSITY

Method for Fabricating a P-I-N Light Emitting Diode Using Cu-Doped P-Type Zno

A method of fabricating a p-i-n type light emitting diode using p-type ZnO, and particularly, a technique for fabricating a p-type ZnO thin film doped with copper, a light emitting diode manufactured using the same, and its application to electrical and magnetic devices. The method of fabricating a p-i-n type light emitting diode using p-type ZnO includes depositing a low-temperature ZnO buffer layer on a sapphire single-crystal substrate, depositing an n-type gallium doped ZnO layer on the deposited low-temperature ZnO buffer layer, depositing an intrinsic ZnO thin film on the deposited n-type gallium doped ZnO layer, forming a p-type ZnO thin film layer on the deposited intrinsic ZnO thin film, forming a MESA structure on the p-type ZnO thin film layer through wet etching to obtain a diode structure, and subjecting the diode structure to post-heat treatment.
Owner:KOREA INST OF SCI & TECH

In, Fe and Cu three-doping lithium niobate crystal and preparation thereof

The invention relates to an In, Fe and Cu triple-doped lithium niobate crystal and a preparation method thereof, relating to the lithium niobate crystal and the preparation method thereof. The method solves the problems of slow response time and low light injury resistant ability of a doped lithium tantalite crystal prepared by the prior art. The In, Fe and Cu triple-doped lithium niobate crystal is prepared by Li2CO3, Nb2O5, Fe2O3, CuO and In2O3. The method comprises the following steps: firstly, required compositions are weighed; secondly, sintering is performed; thirdly, the crystal is grown by adoption of the crystal pulling method; fourthly, polarization treatment is performed; and fifthly, oxidation treatment or reduction treatment is performed, and the In, Fe and Cu doped lithium niobate crystal is obtained. The method dopes element indium (In), ferrum (Fe) and Copper (Cu) in the lithium niobate crystal, and obviously improves the light injury resistant ability and the response time of the lithium niobate crystal on the basis of preserving the prior superior performance of the lithium niobate crystal.
Owner:HARBIN INST OF TECH

Wiring technology of copper doped metal based on A1 material

A metal wring process of Cu doping based on Al material mainly uses the physical deposition method to deposit multiple layers of films with Ta, TaN, Ta, Al, TaN within the same equipment continuously, among which Al metal is added with Cu and Si atom to raise antielectromigration ability of Al metal wiring. At the bottom of Al layer, a composite blocking layer is to prevent Al and Cu from diffusing to silicon slice and media. The deposition of Al metal is in two steps of low temperature and high temperature with Al seed crystal layer deposited in low temperature having a good compactness and Al layer deposited in high temperature having a good porefilling ability and a good back-flow result. TaN layer above Al metal layer can be used as a blocking layer as well as top covering layer and antireflective layer of photoetching.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1

Cu doped MgB2 superconductor and low-temperature rapid preparation method

The invention provides a copper-doping MgB2 superconductor and a method for preparing at low temperature. The components and the molecular mass ratio are as follows: (Mg1.1B2)1-xCux, x equals to 0.01-0.10. The preparation method is that: sufficiently mix magnesium powder, copper powder and boron powder according to a ratio in an agate mortar, then make a sheet under a pressure of 2-10 MPa, finally send the sheet into a high temperature difference indication scan calorimetric instrument or a tubular type sintering furnace to carry out low-temperature sintering, the heating rate is 10-40 DEG C / min, keep the temperature and carry out sintering for 2-7 hours when the temperature reaches 490-600 DEG C, then cool the temperature to room temperature at the rate of 10-40 DEG C / min. The analysis indicates that the sintering temperature for preparing the MgB2 superconductor is low and the sintering time is short, thus considerably remedy the defect of long sintering time of a traditional low-temperature sintering method for preparing the MgB2 superconductor, furthermore, the MgB2 superconductor prepared by the method has excellent superconductive performance. Therefore, the copper-doping sintering method is a very potential and practical production method.
Owner:TIANJIN UNIV

Preparation method of active carbon catalyst used for flue gas desulphurization and denitration

The invention discloses a preparation method of an active carbon catalyst used for flue gas desulphurization and denitration, and belongs to the technical field of flue gas treatment. The preparation method of the active carbon catalyst comprises the following steps: 1, doping TiO2 with Cu: adding a copper salt into a titanium alcohol salt solution, carrying out water-bath heating to form gel, drying the gel, and grinding and sintering the dried gel to obtain Cu-doped TiO2 powder; and 2, loading the Cu-doped TiO2 powder on active carbon: adding the Cu-doped TiO2 powder, a dispersant and a binder into water, impregnating the active carbon in the above obtained solution, carrying out ultrasonic vibration, drying the vibrated solution, heating the dried solution to 400-450 DEG C according to a rate of 3-6 DEG C / min, carrying out heat insulation, and cooling the heat-insulated solution to obtain the Cu-doped TiO2 loaded active carbon catalyst. The desulphurization rate of the catalyst reaches 93.2% or above, the denitration rate of the catalyst reaches 88.7% or above; after the catalyst is regenerated, the desulphurization rate reaches 88.4% or above, and the denitration rate reaches 83.8% or above; and the catalyst has no toxicity.
Owner:山东金瑞达环保科技股份有限公司

Preparation method of transition metal oxide nanosheet array @ carbon paper electrode

The invention discloses a transition metal oxide nanosheet array @ carbon paper electrode material and a preparation method thereof, and belongs to the preparation field of negative electrode materials for lithium ion batteries. The preparation method comprises the following process: cobalt nitrate hexahydrate and copper nitrate trihydrate are dissolved in ultra-pure water A by an ultrasonic method, and 2-methylimidazole (2-MIM) is also dissolved in ultra-pure water B by the ultrasonic method; the solution B is added to the solution A under the condition of magnetic stirring; clean paper is added to the above mixed solution to react at room temperature and then rinsed and dried; and the dried sample is carbonized so as to obtain the Cu-doped Co / CoO nanosheet array @ carbon paper electrodematerial. According to the prepared electrode material, the porous nanosheet array is densely grown on the carbon paper substrate derived from the paper and the material can be directly used as the electrode and has higher specific capacity and cycle stability.
Owner:FUZHOU UNIV

Low-toxicity heat-sensitive quantum dot material and preparation method thereof

InactiveCN103074058AIsolation of electronic processesNo mutual interferenceLuminescent compositionsChemical synthesisDispersity
The invention discloses a low-toxicity heat-sensitive quantum dot material and a preparation method thereof, and belongs to the technical field of semiconductor nanomaterial preparation. The preparation method comprises the steps as follows: by taking a Cu-doped InP quantum dot as a core, coating with a semiconductor ZnS isolation layer at first for isolating an inner material layer from an outer material layer, then coating with a semiconductor InP nanocrystal shell layer, and finally coating an outermost layer with a ZnS protection layer to form a Cu@InP / ZnS / CdSe / ZnS quantum dot. The quantum dot is highly sensitive to temperature, emits green light at normal temperature, red light at the temperature of 200 DEG C and different levels of yellow light at the intermediate temperature, and is stable in property, uniform in size and good in dispersity, and particles after the quantum dot is coated with the shell layer are in a perfect spherical shape; and as the quantum dot material prepared with the method is a non-cadmium semiconductor material, the quantum dot material has the advantage of low toxicity, accords with the green chemical synthesis concept, and is environment-friendly and strong in applicability.
Owner:JILIN UNIV

La and Cu doped BaFeO3-delta based ceramic oxygen permeable membrane material and preparation method thereof

The invention belongs to the field of inorganic film materials, and relates to a La and Cu doped BaFeO3-delta based ceramic oxygen permeable membrane material and a preparation method thereof. The B position of Ba0.975La0.025FeO3-delta is doped with Cu, and the chemical formula of the material is Ba0.975La0.025Fe(1-x)CuxO3-delta, wherein x is larger than 0.05 and smaller than 0.3. The preparationmethod comprises the steps as follows: dissolving materials in deionized water, adding HNO3, performing stirring, adding citric acid and ethylenediaminetetraacetic acid, evaporating the mixed solutionin water bath at 60-100 DEG C to form colloid, and heating and igniting the colloid at 200-400 DEG C to obtain powder; treating the prepared powder in an air atmosphere at 400-900 DEG C, and performing grinding and dry-pressing forming after cooling to room temperature; heating the pressed sample to 1000-1200 DEG C in an air atmosphere, keeping the temperature for 4-15 hours, and performing sintering to prepare the dense Ba0.975La0.025Fe(1-x)CuxO3-delta oxygen permeable membrane product. The oxygen permeable membrane material has compact structure, high oxygen permeability, good stability andexcellent comprehensive performance, and can be applied to continuous oxygen supply for methane partial oxidation reaction and industrial processes of separation and purification of oxygen from otheroxygen-containing gases.
Owner:UNIV OF SCI & TECH BEIJING

Preparation method and corresponding structure of Cu-doped beta-Ga2O3 thin film

The invention discloses a preparation method and corresponding structure of a Cu-doped beta-Ga2O3 thin film. The preparation method comprises the following steps that copper and gallium oxide are co-sputtered by a magnetron sputtering method to generate a copper-doped gallium oxide thin film; and the copper-doped gallium oxide thin film is annealed to form the copper-doped beta-Ga2O3 thin film. The atomic ratio of Cu to Ga in the copper-doped gallium oxide thin film is controlled within the range of 0.012-0.048. The surface of the prepared Cu-doped beta-Ga2O3 thin film is uniform in distribution and controllable in film thickness, the preparation method is easy to operate, and high in process controllability, and the obtained film is compact in surface, stable and uniform in thickness, capable of being prepared on a large area and good in repeatability.
Owner:北京镓族科技有限公司

Method used for preparing carbon-coated Cu-doped CdS flower-shaped nano composite structure photocatalyst conveniently

The invention discloses a method used for preparing a carbon-coated Cu-doped CdS flower-shaped nano composite structure photocatalyst conveniently. The method is used for solving problems in the prior art that preparation cost of CdS nano structure photocatalyst is high, synthesis process is complex and is difficult to control, product uniformity is poor, yield is low, repeatability is low, and much photocorrosion is caused. The method is low in cost, and high in repeatability, and is convenient to control; and an obtained product possesses photocorrosion resistance. According to the method, cadmium chloride, thiourea, glucose, copper sulphate, and polyvinylpyrrolidone (PVP) are taken as reaction reagents, glycol is taken as a solvent, one-step solvothermal reaction is adopted, and an obtained liquid is subjected to centrifugation, washing, and drying so as to obtain the carbon-coated Cu-doped CdS flower-shaped nano composite structure photocatalyst product.
Owner:ZHEJIANG NORMAL UNIVERSITY

Preparation method of Cu-OMS-2 catalyst and application of Cu-OMS-2 catalyst in degradation of organic pollutants

The invention discloses preparation of a Cu-doped OMS-2 catalyst and application of the Cu-doped OMS-2 catalyst to degradation of organic pollutants. The Cu-OMS-2 catalyst is prepared by refluxing, filtering, washing, drying and calcining a mixed solution of manganese sulfate, copper nitrate, concentrated nitric acid and potassium permanganate. The prepared catalyst is used for catalyzing and activating peroxydisulfate to generate sulfuric acid free radicals and hydroxyl free radicals with strong oxidizing property, so that organic dyestuff is efficiently oxidized and degraded, and the catalyst can be recycled after reaction. The preparation method of the catalyst is simple; the obtained catalyst can be used for efficiently catalyzing and activating hydrogen persulfate for multiple times at room temperature to generate sulfate free radicals and hydroxyl free radicals to degrade organic pollutants; the catalyst can be recycled and repeatedly used after reaction, the catalytic performance is not obviously reduced, the industrial cost can be greatly reduced, the green production principle is met, and the catalyst has a great application prospect in the field of organic wastewater degradation.
Owner:CHINA THREE GORGES UNIV

Copper-doped cadmium sulfide quantum dot sensitizer of solar cell and preparation method thereof

The invention relates to a Cu-doped CdS quantum dot sensitizer of a solar cell and a preparation method thereof. According to the preparation method, Cu impurity atoms are doped into a CdS semi-conductor quantum dot to serve as the sensitizer to be assembled into the quantum dot sensitized solar cell. By optimizing a transmission path of an electron hole in the cell, an electron hole can be separated quickly, electrons can be injected into a conduction band of TiO2 effectively, dark current is reduced, and short-circuit current, open-circuit voltage and photoelectric conversion efficiency of the solar cell can be increased. The preparation method is simple, easy to operate, low in cost and capable of performing large-area preparation.
Owner:BEIJING INFORMATION SCI & TECH UNIV

Preparation method of Cu doped p type ZnO thin film

The invention provides a preparation method of a Cu doped p type ZnO thin film, which comprises the following steps of: firstly, pressing ZnO with the purity being more than 4N and high-purity Cu powder into a required target material in a mixing way; secondly, sputtering and depositing the target material on a substrate to form a thin film under a mixed gas environment of argon gas and oxygen; and thirdly, carrying out annealing treatment on the substrate with the formed thin film to obtain the Cu doped p type ZnO thin film. The invention can solve the difficulty that a p type ZnO material is difficult to prepare by Group IB elements.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Preparation method and application method for zinc cathode active material of zinc-nickel secondary battery

The invention discloses a preparation method and an application method for a zinc cathode active material of a zinc-nickel secondary battery. The preparation method for the active material includes the steps: (1) dissolving Cu (CH3COO) 2, Zn (CH3COO) 2 and urea in deionized water to form transparent mixed liquor; (2) ultrasonically dispersing the mixed liquor, transferring the mixed liquor into a hydro-thermal reactor and placing the reactor into a drying oven for heat preservation; and (3) filtering, washing and drying deposits and calcining the deposits at a certain temperature to obtain Cu doped ZnO. By the aid of the active material, zinc cathode deformation can be decreased, dissolution of the zinc cathode active material is suppressed, and accordingly, the cycle life of the zinc-nickel secondary battery is prolonged.
Owner:DONGTAI TIANXIANG NEW ENERGY

Preparation method of diluted magnetic semiconductor film

The invention discloses a preparation method of a diluted magnetic semiconductor film. The preparation method comprises the following steps that S1, a substrate is cleaned, and oil contamination and impurities on the surface of the substrate are removed; and S2, magnetron sputtering equipment is adopted, a Cu target and an Al target serve as spluttering target materials, the substrate is placed ina vacuum cavity of the magnetron sputtering equipment, spluttering gas Ar and reacting gas N2 are filled, and sputtering coating is carried out on the surface of the substrate to obtain a Cu doped AlN diluted magnetic semiconductor film. The two target materials are mutually independent, technological parameters can be independently set according to the requirement, and the preparation on the diluted magnetic semiconductor film in any doped concentration can be carried out; coating on a Cu film and an AlN film is simply carried out in the whole film coating process, the process is simple, andvariables are less; and a preparation technology is simple, the repeatability is good, and a lot of cost of the target materials can be reduced.
Owner:(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD

Cu-doped manganese oxide octahedral molecular sieve catalyst and preparation method and application thereof

The invention provides a Cu-doped manganese oxide octahedral molecular sieve catalyst and a preparation method and application thereof. The preparation method comprises the following steps: S1, dissolving bivalent manganese salt in deionized water, and adding an appropriate amount of nitric acid for regulating the pH value to obtain a first solution; S2, dissolving permanganate in deionized waterto obtain a permanganate solution, dropwise adding the obtained permanganate solution in a first solution or dropwise adding the first solution in the permanganate solution, after the dropwise addingis completed, obtaining a mixed solution, adding a copper salt containing metal component solution, and performing reflowing at the temperature of 100-140 DEG C to obtain an intermediate; S3, washingthe intermediate with deionized water, filtering and drying to obtain a black solid; and S4, performing high-temperature calcination to obtain the Cu-doped manganese oxide octahedral molecular sieve catalyst. The catalyst has effective ozone decomposing performance at room temperature.
Owner:GUANGZHOU UNIVERSITY

Preparation method of carbon-doped reinforced w-cu composite material

The preparation method of the carbon-doped reinforced W-Cu composite material of the present invention is a preparation method based on organic matter-doped carbon-doped reinforced W-Cu composite material. A layer of organic additives, the coated W powder is placed in an inert atmosphere for high temperature treatment to pyrolyze the organic additives to obtain a C@W composite powder; then use the C@W composite powder as a raw material to pass the coating method The Cu@C@W composite powder is prepared; then the Cu@C@W composite powder is subjected to cold isostatic pressing at 100-500MPa to obtain a green body, and finally the green body is put into a vacuum hot-press furnace for sintering to obtain a carbon-doped Reinforced W‑Cu composites. The invention can obtain high-density carbon-doped reinforced W-Cu composite material, and has the advantages of low W-Cu two-phase interface thermal resistance, strong interface bonding force, high thermal conductivity, and the like.
Owner:WUHAN UNIV OF TECH

Hydrothermal method for preparing Cu-doped SnSe2 lithium ion battery electrode material

The invention discloses a hydrothermal method for preparing a Cu-doped SnSe2 lithium ion battery electrode material, comprising the steps of: weighing SnCl2 and SeO2; placing the SnCl2 and SeO2 in theliner of a hydrothermal reaction vessel; weighing and placing copper nitrate solid particles in the liner; adding deionized water to the liner, and sealing the liner in the reaction vessel after magnetic stirring; placing the liner in a drying oven for a hydrothermal reaction; after the reaction is completed, centrifugally washing a reaction product with deionized water and absolute ethyl alcohola plurality times, and then drying the reaction product. The method is easy to operate and does not require complicated equipment. The synthesized Cu-doped SnSe2 composite material, as a negative electrode material, is used in a lithium ion battery system to be subjected to an electrochemical performance test. In an electrochemical test with a current density of 0.1C, the specific discharge capacities in the first three charge-discharge cycles are 433.1mAh g-1, 415.4mAh g-1, 395.9mAh g-1 respectively,, and the specific discharge capacity remains at 152mAh g-1 after 100 cycles.
Owner:ZHEJIANG UNIV

Method for preparing Cu doped dilute magnetic semiconductor thin film

The invention discloses a method for preparing a Cu doped dilute magnetic semiconductor thin film. The method comprises the following steps of 1, a substrate is cleaned, oil stains and impurities on the surface of the substrate are removed; 2, an ion beam deposition equipment and a magnetron sputtering equipment are adopted, the substrate is placed in a vacuum chamber of the ion beam deposition equipment, and a Cu layer is deposited on the surface of the substrate through the ion beam; 3, the substrate deposited with the Cu layer is transferred into a vacuum chamber of the magnetron sputteringequipment, an Al target is adopted as a sputtering target material, a working gas Ar, a reaction gas N2, and an AlN layer on the surface of the Cu layer is sputtered to obtain a composite thin film;4, a sample table for heating magnetron sputtering equipment to place substrate to 500 DEG c, and annealing treatment on the composite thin film obtained in the step s3 to finally obtain the Cu dopeddilute magnetic semiconductor thin film. The method is simple in process, controllable and high in operability, the sample table heating system is used for heating the sample, so that the effect of re-uniformly distributing the doped cu in the thin film is achieved, meanwhile, the crystallization quality of the whole thin film can be improved.
Owner:(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD

Cu-doped zno nano-columnar crystal thin film with room temperature ferromagnetism and preparation method thereof

The invention relates to a Cu-doped ZnO nano-columnar crystal film with room temperature ferromagnetism and a preparation method thereof. The chemical formula of the film is Zn1-xCuxO, wherein 0.01≤x≤0.1, the film has room temperature ferromagnetism, and the microcosm of the film is The morphology is in the form of columnar crystals in the nanoscale range, and the columnar structures are evenly distributed and arranged neatly. The microscopic morphology of the Cu-doped ZnO nano-columnar crystal film of the present invention is a columnar crystal form in the nanoscale range. On the one hand, this makes the film have photoconductivity and electrical conductivity in the preferred direction, and on the other hand, it also makes the film have a larger ratio. The surface area makes this type of film have excellent magnetoelectric and magneto-optical properties.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI

Low-toxicity heat-sensitive quantum dot material and preparation method thereof

InactiveCN103074058BClear color change with temperatureWide range of discolorationLuminescent compositionsChemical synthesisDispersity
The invention discloses a low-toxicity heat-sensitive quantum dot material and a preparation method thereof, and belongs to the technical field of semiconductor nanomaterial preparation. The preparation method comprises the steps as follows: by taking a Cu-doped InP quantum dot as a core, coating with a semiconductor ZnS isolation layer at first for isolating an inner material layer from an outer material layer, then coating with a semiconductor InP nanocrystal shell layer, and finally coating an outermost layer with a ZnS protection layer to form a Cu@InP / ZnS / CdSe / ZnS quantum dot. The quantum dot is highly sensitive to temperature, emits green light at normal temperature, red light at the temperature of 200 DEG C and different levels of yellow light at the intermediate temperature, and is stable in property, uniform in size and good in dispersity, and particles after the quantum dot is coated with the shell layer are in a perfect spherical shape; and as the quantum dot material prepared with the method is a non-cadmium semiconductor material, the quantum dot material has the advantage of low toxicity, accords with the green chemical synthesis concept, and is environment-friendly and strong in applicability.
Owner:JILIN UNIV

Household functional paint as well as preparation method and application thereof

The invention discloses a household functional paint as well as a preparation method and application thereof. A Cu-doped bismuth vanadate visible light catalyst and porous aluminium oxide microspheres are used as synergetic filling materials for adsorption and photocatalysis; a water-based fluorocarbon emulsion is used as a binding agent; indoor wall surfaces and furniture are coated with the paint which has the air purification function of degrading harmful organic matters in air. The preparation process is simple, and the paint is easy to store and apply.
Owner:SHANGHAI SHAOGUANG ENVIRONMENT PROTECTION TECH CO LTD

A preparation method for realizing cu-doping of topological insulator bismuth selenide nanomaterials

The invention discloses a preparation method for Cu doping of bismuth selenide nano-materials of a topology insulator, and the nano-materials are a nano-wire and a nano-strip. The method comprises thesteps: employing a vapour deposition method, taking bismuth selenide as a raw material, carrying out the high-temperature evaporation in a tube furnace, carrying out the transmission through inertialcarrying gas, and preparing the Cu-doped bismuth selenide nano-materials under the condition of taking an Au / Cu film as a catalyst. The prepared materials are good in crystallinity, and the lengths of the nano-wire and the nano-strip are at the level of hundreds of micrometers. The X-ray diffraction analysis (XRD), X-ray energy dispersion spectrum (EDS) and X-ray excited Auger electron spectrum (XAES) are employed for indicating the introduction of Cu and the valence state of doped Cu.
Owner:TIANJIN UNIVERSITY OF TECHNOLOGY

A preparation method of activated carbon catalyst for flue gas desulfurization and denitrification

The invention discloses a preparation method of an active carbon catalyst used for flue gas desulphurization and denitration, and belongs to the technical field of flue gas treatment. The preparation method of the active carbon catalyst comprises the following steps: 1, doping TiO2 with Cu: adding a copper salt into a titanium alcohol salt solution, carrying out water-bath heating to form gel, drying the gel, and grinding and sintering the dried gel to obtain Cu-doped TiO2 powder; and 2, loading the Cu-doped TiO2 powder on active carbon: adding the Cu-doped TiO2 powder, a dispersant and a binder into water, impregnating the active carbon in the above obtained solution, carrying out ultrasonic vibration, drying the vibrated solution, heating the dried solution to 400-450 DEG C according to a rate of 3-6 DEG C / min, carrying out heat insulation, and cooling the heat-insulated solution to obtain the Cu-doped TiO2 loaded active carbon catalyst. The desulphurization rate of the catalyst reaches 93.2% or above, the denitration rate of the catalyst reaches 88.7% or above; after the catalyst is regenerated, the desulphurization rate reaches 88.4% or above, and the denitration rate reaches 83.8% or above; and the catalyst has no toxicity.
Owner:山东金瑞达环保科技股份有限公司

Photoelectric sensor based on copper-doped cadmium sulfide nanowires and preparation method of photoelectric sensor

The invention discloses a photoelectric sensor based on copper-doped cadmium sulfide nanowires and a preparation method of the photoelectric sensor. The preparation method comprises the following steps: cleaning a substrate material, blow-drying with nitrogen, placing a mask, and depositing a Ti film and an Au film in sequence in a vacuum cavity by using an electron beam evaporation method; usinga UV laser marking machine to ablate and carve a groove in the Au / Ti film along a set square-wave-shaped route, and constructing an interdigital electrode; putting a substrate into gas-phase growth equipment, preparing Cu-doped CdS nanowires by using Au as a catalyst through a high-temperature gas-phase growth method, wherein according to the filling amount of a doped raw material, the percentageof Cu atoms doped into CdS is enabled to be 0-7 percent; and overlapping and bridging the nanowires one another at the top of the groove to form a photoelectric sensor unit; according to the present invention, the photoelectric sensor has characteristics of few crystal defects, no surface pollution and current transmission according to the one-dimensional path, and the gas-phase growth equipment is used to achieve the efficient growth of the nanowire steam.
Owner:范佳旭
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