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Preparation method of Cu doped p type ZnO thin film

A thin-film, p-type technology, applied in the field of preparing p-type zinc oxide thin films, can solve the problems of large atomic size, low ionization energy, and difficulty in achieving ZnOp-type doping

Inactive Publication Date: 2010-07-21
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, p-type doping of ZnO is also difficult for doping with group IA elements, mainly because of the low ionization energy of electron-hole pairs of group IA elements and the large mismatch of atomic size.

Method used

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  • Preparation method of Cu doped p type ZnO thin film
  • Preparation method of Cu doped p type ZnO thin film
  • Preparation method of Cu doped p type ZnO thin film

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Embodiment Construction

[0016] see figure 1 Shown, the present invention provides a kind of preparation method of Cu-doped p-type ZnO film, comprises the steps:

[0017] Step 1: Using radio frequency magnetron sputtering method; the sample growth is a self-designed JB-650 ultra-high vacuum multi-target magnetron sputtering instrument, the power supply mode is radio frequency; there are four sputtering in the reaction chamber The diameter of the shooting target reaches 85mm, and the substrate can be rotated at the same time to ensure the uniform thickness of the film; the targets used for sputtering growth films are divided into two targets, A and B, and the A target is made of ZnO powder with a purity of 99.99% and high-purity The Cu powder is uniformly mixed and pressed in a copper round holder, and the molar ratio of Cu element in the target is 2%. The B target is only pressed from ZnO powder with a purity of 99.99%. The purpose of using two targets is to obtain samples with different Cu doping c...

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Abstract

The invention provides a preparation method of a Cu doped p type ZnO thin film, which comprises the following steps of: firstly, pressing ZnO with the purity being more than 4N and high-purity Cu powder into a required target material in a mixing way; secondly, sputtering and depositing the target material on a substrate to form a thin film under a mixed gas environment of argon gas and oxygen; and thirdly, carrying out annealing treatment on the substrate with the formed thin film to obtain the Cu doped p type ZnO thin film. The invention can solve the difficulty that a p type ZnO material is difficult to prepare by Group IB elements.

Description

technical field [0001] The invention provides a process for preparing a p-type zinc oxide film, in particular a process for preparing a p-type zinc oxide film by using a magnetron sputtering method. Background technique [0002] Zinc oxide (Zinc oxide: ZnO) has been widely used as a multifunctional material. As a II-VI direct wide bandgap semiconductor material, ZnO has become one of the hotspots in the research of semiconductor thin film materials. Its forbidden band width at room temperature is 3.37eV, corresponding to the wavelength of ultraviolet light, which can realize ultraviolet light emission, and then can develop short-wavelength light-emitting diodes; moreover, ZnO has a large exciton binding energy (60meV), Compared with GaN (28meV), it is twice as high, and ZnO replaces the recombination of electron-hole pairs with exciton recombination, which can produce stimulated emission at a lower threshold, and the excitation temperature is higher (550°C) , showing great...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35C23C14/58
Inventor 杨晓丽陈诺夫尹志岗
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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