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Ultraviolet detection device based on gold nanoparticle enhanced gallium oxide thin film and preparation method thereof

A gold nanoparticle and gold nanoparticle technology, applied in the field of ultraviolet detection devices, can solve the problems of fragile, bulky, etc., and achieve the effects of stable performance, improved sensitivity, and strong process controllability

Inactive Publication Date: 2016-05-04
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Photomultiplier tubes need to work at high voltages, and are bulky and easily damaged, which has great limitations for practical applications

Method used

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  • Ultraviolet detection device based on gold nanoparticle enhanced gallium oxide thin film and preparation method thereof
  • Ultraviolet detection device based on gold nanoparticle enhanced gallium oxide thin film and preparation method thereof
  • Ultraviolet detection device based on gold nanoparticle enhanced gallium oxide thin film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0029] Proceed as follows:

[0030] 1. Pretreatment of n-type Si substrate: put n-type Si substrate into V(HF):V(H 2 o 2 )=1:5 solution soaked to remove the natural oxide layer, then ultrasonic cleaning with acetone, ethanol and deionized water respectively, and vacuum drying;

[0031] 2. Place the target and substrate: put the Ga 2 o 3 The target is placed on the target stage of the RF magnetron sputtering system, and the n-type Si substrate processed in step 1) is fixed on the sample holder and put into the vacuum chamber;

[0032] 3. Ga 2 o 3 Thin film deposition process: first evacuate the chamber, heat the n-type Si substrate, pass in argon gas, and adjust the pressure in the vacuum chamber; among them, Ga 2 o 3 The distance between the target and the n-type Si substrate is set to 5 cm, the sputtering power is 60 W, and the deposition time is 1 hour;

[0033] 4. The preparation process of gold nanoparticles: the chamber is first evacuated, and the Ga obtained in h...

Embodiment 2

[0037] Steps (1), (2) and (5) are all the same as in Example 1. In step 3, the chamber is first evacuated, the n-type Si substrate is heated, and argon gas is introduced to adjust the pressure in the vacuum chamber; wherein, Ga 2 o 3 The distance between the target and the n-type Si substrate is set to 5 cm, the sputtering power is 70W, and the deposition time is 1 hour; in step 4, the chamber is first evacuated, the n-type Si substrate is heated, and argon gas is introduced. Adjust the pressure in the vacuum chamber; wherein, the distance between the gold target and the n-type Si substrate is set to 5 cm, the sputtering power is 50 W, and the deposition time is 10 seconds; then the gold film is transferred to a high-temperature furnace for annealing to obtain For gold nanoparticles, the annealing temperature is 450° C., and the annealing time is 1 hour.

[0038] A voltage is applied across the interdigitated electrode of the gold nanoparticle-enhanced gallium oxide film to ...

Embodiment 3

[0040] Steps (1), (2) and (5) are all the same as in Example 1. In step 3, the chamber is first evacuated, the n-type Si substrate is heated, and argon gas is introduced to adjust the pressure in the vacuum chamber; wherein, Ga 2 o 3 The distance between the target and the n-type Si substrate is set to 5 cm, the sputtering power is 70W, and the deposition time is 1 hour; in step 4, the chamber is first evacuated, the n-type Si substrate is heated, and argon gas is introduced. Adjust the pressure in the vacuum chamber; wherein, the distance between the gold target and the n-type Si substrate is set to 5 cm, the sputtering power is 60W, and the deposition time is 15 seconds; then the gold film is transferred to a high-temperature furnace for annealing to obtain For gold nanoparticles, the annealing temperature is 450° C., and the annealing time is 1 hour.

[0041] A voltage is applied across the interdigitated electrode of the gold nanoparticle-enhanced gallium oxide film to m...

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Abstract

The invention relates to an ultraviolet detection device based on a gallium oxide thin film and a preparation method thereof, in particular to an ultraviolet detection device based on a gold nanoparticle enhanced Ga2O3 thin film and a preparation method thereof. The preparation method includes the steps that a layer of Ga2O3 thin film is deposited on a Si substrate according to the radio-frequency magnetron sputtering technology; then, a layer of gold thin film is deposited on the surface of the Ga2O3 thin film, the obtained gold thin film is subjected to spheroidizing annealing, and thus gold particles are obtained; finally, a layer of gold thin film interdigital electrodes are deposited on the Au-Ga2O3 thin film with a mask. A photoelectric property testing result of the ultraviolet detection device shows that the device has good photoelectric responses. The ultraviolet detection device based on the gold nanoparticle enhanced gallium oxide thin film and the preparation method thereof have the advantages that the prepared ultraviolet detection device based on the gold nanoparticle enhanced gallium oxide thin film is stable in property, capable of making sensitive responses and small in dark current and has good potential application; besides, the preparation method is strong in process controllability, easy to implement and good in universality, has restorability in repeated testing and has broad application prospects.

Description

technical field [0001] A kind of ultraviolet detection device based on gallium oxide thin film, specifically refers to a kind of based on gold nanoparticle enhanced Ga 2 o 3 Thin-film ultraviolet detectors and methods for their preparation. technical background [0002] With the development of ultraviolet detection technology, more and more people pay attention to ultraviolet detectors. Photomultiplier tubes have been used more in commercial and military applications before. Photomultiplier tubes need to work at high voltages, and are bulky and easily damaged, which has great limitations on practical applications. Wide-bandgap semiconductor materials have superior physical and chemical properties and potential technical advantages. Devices made of them have superior working characteristics in high-frequency, high-temperature, high-power and short-wavelength applications, making them more useful in military and civilian fields. The good development prospects have always a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/032H01L31/18B82Y30/00
CPCH01L31/032H01L31/101H01L31/18B82Y30/00Y02P70/50
Inventor 郑宇徽朱为康王顺利李小云李培刚
Owner ZHEJIANG SCI-TECH UNIV
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