Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Copper-doped cadmium sulfide quantum dot sensitizer of solar cell and preparation method thereof

A technology for sensitizing solar cells and quantum dots, which is applied in the field of solar energy to achieve the effects of increasing short-circuit current density, increasing short-circuit current and rapid separation

Inactive Publication Date: 2014-06-11
BEIJING INFORMATION SCI & TECH UNIV
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the work of improving the performance parameters of solar cells by doping CdS quantum dots with Cu as a sensitizer through the SILAR method has not been reported so far.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Copper-doped cadmium sulfide quantum dot sensitizer of solar cell and preparation method thereof
  • Copper-doped cadmium sulfide quantum dot sensitizer of solar cell and preparation method thereof
  • Copper-doped cadmium sulfide quantum dot sensitizer of solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The specific steps of the copper-doped cadmium sulfide quantum dot sensitizer and its preparation method are as follows:

[0025] 1) Equipped with 0.1M Cd(NO 3 ) 2 Solution and Na 2 S solution, put it in a water bath at 20-50℃ for 30-60min;

[0026] 2) Put CuCl 2 Add step 1) Cd(NO 3 ) 2 In the solution, where Cu 2+ With Cd 2+ The ratio of the number of atoms is 1:1;

[0027] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0028] 4) The photoanode material to be sensitized TiO 2 Immerse in the solution prepared in step 3) for 5 minutes, take it out, clean it with the corresponding solvent, and blow dry with nitrogen;

[0029] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 1) 2 In the S solution for 5 minutes, take it out and clean it with the corresponding solvent, and dry it with nitrogen, then a Cu-doped CdS semiconductor quantum dot sensitizer layer is formed on the photoanode material;

Embodiment 2

[0031] The specific steps of the copper-doped cadmium sulfide quantum dot sensitizer and its preparation method are as follows:

[0032] 1) Equipped with 0.1M Cd(NO 3 ) 2 Solution and Na 2 S solution, put it in a water bath at 20-50℃ for 30-60min;

[0033] 2) Put CuCl 2 Add step 1) Cd(NO 3 ) 2 In the solution, where Cu 2+ With Cd 2+ The ratio of the number of atoms is 1:500;

[0034] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0035] 4) The photoanode material to be sensitized TiO 2 Immerse in the solution prepared in step 3) for 5 minutes, take it out, clean it with the corresponding solvent, and blow dry with nitrogen;

[0036] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 1) 2 In the S solution for 5 minutes, take it out and clean it with the corresponding solvent, and dry it with nitrogen, then a Cu-doped CdS semiconductor quantum dot sensitizer layer is formed on the photoanode material;

Embodiment 3

[0038] The specific steps of the copper-doped cadmium sulfide quantum dot sensitizer and its preparation method are as follows:

[0039] 1) Equipped with 0.1M Cd(NO 3 ) 2 Solution and Na 2 S solution, put it in a water bath at 20-50℃ for 30-60min;

[0040] 2) Put CuCl 2 Add step 1) Cd(NO 3 ) 2 In the solution, where Cu 2+ With Cd 2+ The ratio of the number of atoms is 1:1000;

[0041] 3) Put the solution obtained in step 2) into a 30°C water bath for 30 minutes;

[0042] 4) The photoanode material to be sensitized TiO 2 Immerse in the solution prepared in step 3) for 5 minutes, take it out, clean it with the corresponding solvent, and blow dry with nitrogen;

[0043] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 1) 2 In the S solution for 5 minutes, take it out and clean it with a corresponding solvent, and dry it with nitrogen, then a Cu-doped CdS semiconductor quantum dot sensitizer layer is formed on the photoanode material.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a Cu-doped CdS quantum dot sensitizer of a solar cell and a preparation method thereof. According to the preparation method, Cu impurity atoms are doped into a CdS semi-conductor quantum dot to serve as the sensitizer to be assembled into the quantum dot sensitized solar cell. By optimizing a transmission path of an electron hole in the cell, an electron hole can be separated quickly, electrons can be injected into a conduction band of TiO2 effectively, dark current is reduced, and short-circuit current, open-circuit voltage and photoelectric conversion efficiency of the solar cell can be increased. The preparation method is simple, easy to operate, low in cost and capable of performing large-area preparation.

Description

Technical field [0001] The invention belongs to the technical field of solar energy, and more specifically relates to a doped quantum dot sensitizer for solar cells and a preparation method thereof. Background technique [0002] With the rapid development of the global economy, the continuous growth of the population and the gradual deepening of human dependence on energy, the energy crisis and environmental pollution have become the primary problems facing mankind in the 21st century. Faced with the increasingly depleted global petrochemical energy, the inexhaustible solar energy is undoubtedly the first choice for mankind's future energy development. Therefore, solar energy has attracted the most attention as a source of new energy supply, and it has received close attention from all walks of life from the technological development process or future forward-looking. The device that directly converts light energy into electrical energy through the photoelectric effect is a sola...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/042H01G9/20
Inventor 邹小平周洪全黄宗波滕功清
Owner BEIJING INFORMATION SCI & TECH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com