41results about How to "Reduced compound center" patented technology

The invention provides a heat treatment method for an n-type silicon wafer. The heat treatment method at least includes the steps that the n-type silicon wafer to be treated is provided, the n-type silicon wafer is put into a heat treatment furnace with a certain temperature, and the temperature is increased to a certain value; oxygen is introduced into the heat treatment furnace; a dispersing agent containing n-type doping elements is supplied to the surface of the n-type silicon wafer so that a silicon oxide layer and an n-type doping layer can be formed on the surface of the n-type silicon wafer; the silicon oxide layer and the n-type doping layer are removed after heat treatment is completed. After the n-type silicon wafer is subjected to heat treatment, recombination centers, caused by the concentration of the doping elements and heat stress, in the n-type silicon wafer can be reduced, the quality and uniformity of the n-type silicon wafer can be improved, the service life of current carriers in the n-type silicon wafer can be prolonged, and thus the conversion efficiency of a solar cell can be improved.

The present invention provides a solar cell and a preparation method thereof, and relates to the technology field of solar cells. The solar cell comprises a cell matrix, a passivating film and a backelectrode. The passivating film is located between the cell matrix and the back electrode, the passivating film is provided with an opening area, and the opening area is internally provided with a high-work-function semiconductor material layer which is located between the cell matrix and the back electrode. The solar cell is employed to relieve the technical problem that there is a high recombination region in a local contact solar cell to cause decreasing of the cell performances in the prior art and achieve the technical effects on reduction of the cell recombination region and improvementof the cell electrical performances in the prior art.

The invention provides a texturing technology of a diamond wire solar battery piece. The texturing technology solves technical problems that an antireflection effect of the existing conventional chemical method is not remarkable, cost of matching of whole technology of a black silicon technology is increased more than ten times, the existing diffusion technology is not matched with a polycrystalline diamond wire texturing technology, and so on. The texturing technology of the diamond wire solar battery piece comprises the following steps: a, texturing; b, washing a surface of a silicon wafer with ultrapure water; c, alkaline washing; d, washing the surface of the silicon wafer with the ultrapure water; e, washing with mixed acid solution of hydrofluoric acid and hydrochloric acid; f, washing with the ultrapure water and drying. The texturing technology of the diamond wire solar battery piece, provided by the invention, has the advantage of low reflectivity of polycrystalline.

The invention provides a method for gettering phosphorus in an N-type polysilicon slice by a metallurgical method, and relates to polysilicon. The method is good in gettering effect, low in cost and simple in operation, and is suitable for industrial production. The method for gettering phosphorus in the N-type polysilicon slice by the metallurgical method comprises the following steps of: washing and drying the N-type polysilicon slice; feeding a gas into the obtained polysilicon slice at the temperature of 700 to 1,200 DEG C, performing phosphorous diffusion gettering thermal treatment, andcooling the polysilicon slice; immersing the obtained polysilicon slice into hydrogen fluoride (HF) solution; and corroding a gettering layer on the polysilicon slice by using acid corrosive liquid, washing and drying, and baking so as to obtain the phosphorous-gettered polysilicon slice.

The invention provides a preparing method of a graphene / gallium arsenide solar battery. The preparing method comprises the steps of 1, transferring the graphene to the surface of a window layer of the surface of a gallium arsenide epitaxial wafer to form a graphene layer; 2, preparing a heavy doping gallium arsenide cap layer on the surface of the graphene layer; 3, preparing a rear electrode on the surface of the heavy doping gallium arsenide cap layer, and preparing a front electrode on the heavy doping surface of the gallium arsenide cap layer; 4, adopting a chemical etching method to etch the heavy doping gallium arsenide cap layer among grid lines of the front electrode to expose the graphene layer, and preparing an antireflection layer on the exposed graphene layer. According to the graphene / gallium arsenide solar battery, the graphene layer is adopted as a transparent conducting layer, single or more layer of graphene are transferred to a position between a window layer of a traditional unijunction or multijunction gallium arsenide solar battery and the heavy doping gallium arsenide cap layer through a graphene transferring technology, therefore, transverse transport of photo-generated carriers can be promoted, recombination centers of photo-generated carriers can be reduced, series resistance can be reduced, a fill factor can be improved, and photoelectric conversion efficiency of the solar battery can be improved.