The invention discloses a method for preparing the back surface of a PERC single crystal double-sided solar cell, comprising the following steps: S1, depositing a passivation layer on the back surface of a silicon substrate; S2, using a low-energy laser to irradiate the passivation layer with laser light, so that the laser irradiates the passivation layer with laser light. The lower passivation layer forms a groove, and the silicon substrate in the groove is exposed; S3, deposit a protective layer on the surface of the groove and the passivation layer, and the protective layer is a silicon nitride film; S4, use electronic paste to burn through the groove The protective layer is prepared, and the back electrode is in contact with the silicon substrate in the groove. In the method for preparing the back of the PERC single crystal double-sided solar cell, immediately after depositing the passivation layer, a low-energy laser is used for grooving, which reduces damage to the silicon substrate and reduces energy consumption, and then deposits a protective layer, which not only realizes the protection of the passivation layer It also has a repairing effect on the surface of the silicon substrate and in the body, reducing the recombination center and improving the conversion efficiency of the battery.