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33results about How to "Reduce the number of grain boundaries" patented technology
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Low-temperature poly-silicon manufacturing method, method for manufacturing TFT substrate by utilization of low-temperature poly-silicon manufacturing method, and TFT substrate structure
InactiveCN104064451AImprove insulation effectReduce the number of grain boundariesTransistorSolid-state devicesEngineeringPre treatment
The invention provides a low-temperature poly-silicon manufacturing method, a method for manufacturing a TFT substrate by utilization of the low-temperature poly-silicon manufacturing method, and a TFT substrate structure. The low-temperature poly-silicon manufacturing method comprises the following steps that 1, the substrate (1) is provided; 2, a buffer layer (2) is formed on the substrate (1) in a deposition mode; 3, pattern processing is carried out on the buffer layer (2), and a convex portion (21) and a concave portion (23) which are different in thickness are formed; 4, an amorphous silicon layer (3) is formed on the buffer layer (2) provided with the convex portion (21) and the concave portion (23) in a deposition mode; 5, excimer laser annealing pretreatment is carried out on the amorphous silicon layer (3); 6, excimer laser annealing is carried out on the amorphous silicon layer (3), the whole surface of the amorphous silicon layer (3) is scanned through laser beams, and the amorphous silicon layer (3) is made to melt and is recrystallized to form a poly-silicon layer (4). The method can effectively control the crystallization position and crystallization direction when the amorphous silicon layer is recrystallized.
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
High temperature and creep resistance corundum-mullite load bearing board and preparation method thereof
ActiveCN101423414AIncrease temperatureImprove thermal shock resistanceMulliteHigh-temperature corrosion
The invention belongs to the technical field of ceramic kiln furniture and provides a corundum-mullite load bearing board and a preparation method. The corundum-mullite load bearing board comprises raw material compositions in the following mass percentage: 70 to 85 percent of alpha-Al2O3 particle material with the grain diameter of between 5 and 0.088 mm, 5 to 15 percent of alumina-silica sol fine powder with the grain diameter less than 0.08 mm, 5 to 15 percent of fused mullite fine powder with the grain diameter less than 0.088 mm, and 3 to 5 percent of bonding agent which is externally added. The characteristics of high purity and small particle size of alumina-silica sol are utilized to prepare the high-temperature creep-resistant load bearing board which has high purity and is formed by large-grained mullite bonded with corundum through high-temperature calcination, and the load bearing board does not deform and has good thermal shock resistance when the load bearing board is used at high temperature, and can be taken as the load bearing board used at a temperature higher than 1,650 DEG C in the fields of electronic ceramics and high temperature ceramics.
Owner:SINOSTEEL LUOYANG INST OF REFRACTORIES RES
Preparation and application of all-inorganic perovskite cell based on transition metal ion doping
ActiveCN110047951AIncrease binding energyInhibition formationFinal product manufacturePhotovoltaic energy generationHole transport layerCrystallinity
The present invention provides an all-inorganic perovskite solar cell based on transition metal ions doped CsPbBr<3> and a preparation method and an application thereof. Specifically, the invention isthat conductive glass is first spin-coated with an electron transfer layer and subsequently spin-coated with a lead bromide solution mixed with transition metal ions, then is spin-coated with a cesium bromide solution repeatedly; the non-porous perovskite film with a high crystallinity and a large grain size is prepared; and finally the all-inorganic perovskite solar cell based on transition metal ions doped CsPbBr<3> is assembled by blade coating of carbon back electrode. The invention reduces the defect density in the perovskite film by doping transition metal ions, simultaneously the energy band structure is adjusted; the energy loss of charge migration is reduced; and the separation, extraction and transfer of photogenerated charges and charge recombination are reduced, thereby the photoelectric conversion efficiency and long-term operation stability of the cell are improved. The invention has the advantages such as simple and feasible preparation method, large optimization spaceof material combination, no noble metal back electrode or hole transporting layer and low cost.
Owner:OCEAN UNIV OF CHINA
Method for improving electrical conductivity of graphene thin films prepared by normal-pressure chemical gas-phase sedimentation method
InactiveCN107217239AInhibits heterogeneous nucleationReduce nucleation densityChemical vapor deposition coatingGas phaseSurface cleaning
The invention belongs to the technical field of grapheme material preparation and discloses a method for improving the electrical conductivity of graphene thin films prepared by a normal-pressure chemical gas-phase sedimentation method. The method for improving the electrical conductivity comprises the steps that (1) copper foil is subjected to surface cleaning treatment; (2) the treated copper foil is subjected to high-temperature heat treatment, and the conditions of high-temperature heat treatment are that the flow speed of argon is 200-500 sccm, the flow speed of hydrogen is 0-50 sccm, and constant-temperature treatment is conducted at the temperature of 700-100 DEG C for 5-7 hours; (3) the copper foil subjected to high-temperature treatment is heated till the temperature is 900-1050 DEG C, and methane is led in for growth; and (4) leading-in of the methane and the hydrogen is stopped, leading-in of the argon is kept, cooling is conducted, and then the graphene thin films grown to copper piece substrates are obtained. According to the for improving the electrical conductivity of the graphene thin films prepared by the normal-pressure chemical gas-phase sedimentation method, operating is easy, extra equipment do not need to be additionally arranged, the cost is low, operating is easy, the purposes that sheet resistance of the graphene thin films is greatly reduced, and the electrical conductivity of the graphene thin films is improved can be achieved.
Owner:SOUTH CHINA UNIV OF TECH +1
Valve-controlled sealing lead-acid storage battery for starting and stopping of automobiles
InactiveCN104091969AImprove timelinessReduce corrosionFinal product manufactureSmall-sized cells cases/jacketsAlloySilicon dioxide
The invention provides a valve-controlled sealing lead-acid storage battery for starting and stopping of automobiles. The valve-controlled sealing lead-acid storage battery is characterized in that ytterbium is added into Pb-Ca-Sn positive electrode grid alloy, the main ingredient of the alloy is Pb, Ca accounts for 0.05%-0.09% of the mass of the grid alloy, Sn accounts for 1.0%-2.0% of the mass of the grid alloy, and Yb accounts for 0.005%-0.05% of the mass of the grid alloy; heat treatment is carried out on a grid for 5-60 minutes under the environment with the temperature of 250-320 DEG C; silicon dioxide is added into an AGM (Absorptive Glass Mass) partitioning plate, or silicon dioxide is added into electrolyte, and the content of the silicon dioxide in the electrolyte is 0.3%-1.5%. The valve-controlled sealing lead-acid storage battery provided by the invention has the advantages that by improvement on the grid alloy of the storage battery and combination of improvement on the alloy of the partitioning plate and structural improvement on a battery jar, not only are the characteristics such as the discharging depth, the discharging frequency and the specific energy of the starting and stopping battery achieved, but also the heating amount of the valve-controlled battery is reduced, the expansion and thermal runaway of the battery are prevented, the corrosion resistance of the grid of the battery is improved and the battery can work under the environment with the temperature of 70 DEG C at highest.
Owner:ZHEJIANG NARADA POWER SOURCE CO LTD +1
Method for casting large-grained silicon ingot
InactiveCN102653881AImprove photoelectric conversion efficiencyReduce the number of grain boundariesPolycrystalline material growthFrom frozen solutionsCrystal orientationIngot
The invention discloses a method for casting a large-grained silicon ingot by adopting a directional-solidification growing method, mainly comprising the following steps of: (1) putting a monocrystalline silicon plate cut according to a certain crystal orientation on the bottom layer of a quartz crucible as seed crystals; (2) filling an appropriate quantity of polycrystalline silicon materials and doping elements on the seed crystals; (3) putting the crucible with the raw materials into a polycrystalline furnace, vacuumizing and heating to melt the silicon material at the upper part, and when the monocrystalline silicon plate starts to be melted at the later stage of melting, the temperature of the bottom of the crucible is controlled by adjusting the rise height of a heat-resistant cage; therefore, the seed crystals are partially melted; and (4) staring a crystal growing procedure, and forming a vertical temperature gradient by controlling the power of a heater and lifting the heat-resistant cage, so that the silicon crystals grow in the direction of the monocrystalline silicon plate which is not completely melted; and finally, carrying out annealing and cooling steps to obtain the large-grained polycrystalline silicon ingot.
Owner:ZHENJIANG HUANTAI SILICON TECH
Integral turbine orientated crystallization method
ActiveCN1676243AReduced high temperature creep resistanceImprove high temperature creep resistanceTurbine bladeAlloy
The directional crystallization method of one-piece turbine relates to a casting method of one-piece turbine, which includes the following steps: a. coating shell, coating large end plane of turbine mould shell with heat-insulating material whose thickness is 1-10 mm; b. boxing and sand-filling, placing the turbine mould shell into mould box, filling the mould box with quartz sand, bottom surface in the mould box and top surface of mould box adopt heat-insulating plate; firing temperature is 850-1300 deg.C; d. smelting, smelting nickel base alloy in equiaxial vacuum casting induction smelting furnace, pouring at 1450-1700 deg.C; and e. cooling, after it is poured, placing for 2-30 min. under the vacuum state.
Owner:WUXI POWER ENG
Polysilicon film for film transistor and display device with the polysilicon film
InactiveCN1310338CImprove featuresFeature SynchronizationTransistorSolid-state devicesDisplay deviceEngineering
A polycrystalline silicon thin film for a TFT and a display device using the same where the number of crystal grain boundaries exerts a fatal influence on movement of electric charge carrier, providing a distance 'S' between active channels of the TFT having dual or multiple channels with a relation S = mGs.sec [theta]- L, and also providing a display device in which uniformity of TFT characteristics is improved by synchronizing the number of the crystal grain boundaries included in each of the channels of the dual or multiple channels S = mGs.sec [theta]-L, Gs is a size of crystal grains of the polycrystalline silicon thin film, m is an integer of 1 or more, [theta] is an inclined angle where fatal crystal grain boundaries, that is, 'primary' crystal grain boundaries are inclined in a direction perpendicular to an active channel direction, and L represents a length of active channels for each TFT having dual or multiple channels.
Owner:SAMSUNG DISPLAY CO LTD
Nano film material
InactiveCN111261492AIncrease photocurrentSimple preparation processMaterial nanotechnologyFinal product manufactureSolid state reaction methodPhotocurrent
The invention discloses a nano film material. Steps of preparation of a NiSe nano film, transfer of the NiSe nano film, construction of a NiSe nano film optical detector and the like are included. TheNiSe nano film with the non-layered structure, which is grown by a solid-phase reaction method, is good in quality, large in grain size and small in grain boundary number; according to the photoelectric detector prepared on the basis of the high-quality NiSe nano film, the obtained photocurrent is increased by 4 orders of magnitudes compared with that of a NiSe nano crystalline film; the preparation process is simple, the cost is low, the practical value is good, and the method can be used for preparing other non-layered structure material nano films compatible with a traditional planar process.
Owner:余姚市晶鹏光伏发电有限公司
Manufacturing method of low temperature poly-silicon thin film, low temperature poly-silicon thin film and low temperature poly-silicon TFT substrate
InactiveCN108831894ACrystallization direction can be controlledSmall sizeSolid-state devicesSemiconductor/solid-state device manufacturingEnergy gradientSilicon thin film
The invention provides a manufacturing method of a low temperature poly-silicon thin film, the low temperature poly-silicon thin film and a low temperature poly-silicon TFT substrate. According to themanufacturing method of the low temperature poly-silicon thin film, a refection layer of a silicon nitride material is formed through deposition on an amorphous silicon thin film layer, and a plurality of convex or concave arc surface structures are formed on the surface of the refraction layer; when an excimer laser beam is adopted to irradiate the amorphous silicon thin film layer, the amorphous silicon thin film layer is crystallized to form a low temperature poly-silicon thin film; in the process, a certain light scattering effect or a condensation effect can be generated when the excimerlaser beam passes through the arc surface structures of the refraction layer, so that a laser energy gradient is formed on the amorphous silicon thin film layer; and therefore, the crystallization direction of the amorphous silicon thin film layer can be controlled, the grain size is enlarged, and the grain boundary quantity is reduced, so that the mobility of the carriers of a TFT device can beimproved, and influence of the grain boundary to the leakage current can be lowered.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
Crucible for growing polysilicon ingot
InactiveCN101597793BGood orientationIncrease percentagePolycrystalline material growthSingle crystal growth detailsSquare decimeterCrucible
The invention relates to a crucible for growing silicon ingot in the field of solar energy, in particular to a crucible for growing polysilicon ingot. The crucible for growing the polysilicon ingot is characterized in that: a bottom plate 2 of the crucible is provided with a plurality of holes 3; and the depth of the holes 3 is 1 to 25 mm, the aperture of the level part of the holes 3 and the bottom plate 2 of the crucible is 1 to 30 mm, and the distributed density of the holes 3 and the bottom plate 2 of the crucible is 1 to 100 per square decimeter. By adopting the crucible for growing the polysilicon ingot to grow polysilicon ingot, the directionality of crystal grains of the polysilicon ingot can be remarkably improved, crystal grains of the polysilicon ingot predominate in <110> and <112> crystal orientation, multiple parallel twins boundaries caused by <111> crystal face are reduced, the number of crystal boundaries is reduced, and simultaneously the percentage of sigma 3 shallow energy level crystal boundary is improved so as to effectively prolong the minority carrier lifetime of a silicon chip, and the conversion efficiency of solar cells made of the silicon chip is improved.
Owner:JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD
Compound thin film and preparation method thereof, and compound thin film solar cell
ActiveCN110676351AEasy to industrializeQuality improvementFinal product manufacturePhotovoltaic energy generationThin membraneBattery cell
The invention discloses a compound thin film and a preparation method thereof, and a compound thin film solar cell, and relates to the cell technology field. The compound thin film is prepared by annealing an absorption layer precursor doped with Bi under a low-temperature condition. According to the compound thin film, VA element Bi doping is performed, in an annealing process, a doped Bi elementcan react to generate a low-melting-point compound and the low-melting-point compound is used as a fluxing agent to promote crystallization of an absorption layer thin film, and defects and compositecenters in the thin film are reduced so that quality of a film layer can be improved, corresponding cell device performance can be increased, a problem of growing an absorption layer of a high-quality compound thin film cell under a low-temperature preparation condition is effectively solved, and more possible ways are provided for promoting industrial development of a flexible PI substrate compound thin film solar cell.
Owner:SUN YAT SEN UNIV
Manufacturing method of TFT array substrate and TFT array substrate
InactiveCN108630711AHigh carrier mobilityImprove mobilitySolid-state devicesSemiconductor/solid-state device manufacturingEnergy gradientCanyon
The invention provides a manufacturing method of a TFT array substrate and the TFT array substrate. The manufacturing method of the TFT array substrate comprises the following steps: forming a first buffer layer on a substrate, wherein multiple arc bulges or multiple arc canyons are arranged on the first buffer layer; and then forming an amorphous silicon layer on a second buffer layer formed on the first buffer layer, wherein the arc bulges or the arc canyons can change the light path of the large irradiating the amorphous silicon layer in the process of performing excimer laser annealing onthe amorphous silicon layer to form the poly-crystalline silicon layer, thereby forming energy gradient in the amorphous silicon layer. The crystallite dimension in the formed poly-crystalline siliconlayer is increased, the crystal boundary number is reduced, the carrier migration rate of the TFT device is improved, and the electricity of the TFT device is promoted.
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Crucible for preparing polycrystalline silicon ingot and growth method of polycrystalline silicon ingot
ActiveCN104018222AReduce the number of grain boundariesIncrease sizePolycrystalline material growthBy pulling from meltMolten siliconElectric properties
The invention discloses a crucible for preparing a polycrystalline silicon ingot and a growth method of the polycrystalline silicon ingot. The crucible is of a hollow rectangular structure, the bottom side of the crucible takes the shape of a square, and a plurality of right angle V-shaped long grooves are formed in the bottom side of the square. The growth method comprises the following steps: 1) controlling the temperature to firstly reduce the temperature of molten silicon inside the V-shaped long grooves to be 1410 DEG C; 2) lifting an insulation bucket to form the kernel and grow the molten silicon from the bottoms of the V-shaped long grooves; 3) controlling the lifting speed of the insulation bucket, enabling crystal of fast growth speed to achieve the upper top surfaces of the V-shaped long grooves firstly, wherein the crystallization speed of the crystal inside the V-shaped long grooves is 2mm / h; and 4) accelerating the lifting of the insulation bucket, and accomplishing the following crystal growth in a speed of 10mm / h, thereby obtaining columnar crystal. Through crystal guidance functions of the V-shaped long grooves at the bottom of the crucible, accumulation of impurities at crystal defect parts is reduced, the electric properties of the silicon ingot are improved, and the utilization rate of the bottom of the polycrystalline silicon ingot is improved.
Owner:郎溪品旭科技发展有限公司
A pressure-driven ion diffusion growth method for the preparation of inorganic perovskite single crystal thin films
ActiveCN110484963BReduce defectsDiffusion fastPolycrystalline material growthFrom solid statePhotodetectorNew energy
The invention relates to a method for preparing an inorganic perovskite single-crystal thin film by pressure-driven ion diffusion growth. First, the inorganic perovskite semiconductor polycrystalline thin film is prepared by the conventional solution spin coating method, and then the surface-polished cover sheet is closely attached to the surface of the polycrystalline thin film, and covered with a flexible high-temperature resistant thin film. Next, put the sample into a high-pressure autoclave filled with liquid pressure and heat transfer medium, apply high pressure to the autoclave after sealing the autoclave, and raise the temperature to the set value at a set speed. After constant temperature and pressure treatment for a period of time, the autoclave was slowly cooled to room temperature. After the pressure is removed, the autoclave can be opened to obtain a high-quality inorganic perovskite semiconductor single crystal thin film with large grain size, high crystallinity, and highly fused grain boundaries. The inorganic perovskite single crystal thin film prepared by the invention can be used to develop high-performance solar cells, electroluminescent devices, photodetectors, etc., and has important application value in the fields of new energy technology, display equipment manufacturing, automatic control, and the like.
Owner:SHANDONG UNIV
Preparation method of large-area non-laminated structure NiSe nano-film
InactiveCN109097742AQuality improvementRefine the grain sizeVacuum evaporation coatingSputtering coatingPhotovoltaic detectorsSolid state reaction method
The invention discloses a preparation method of a large-area non-laminated structure NiSe nano-film. The method comprises the steps of preparation of a NiSe nano-film, transfer of the NiSe nano-film,and construction of a NiSe nano-film optical detector. The non-laminated structure NiSe nano-film obtained by growth through a solid-phase reaction method is good in quality, large in grain size and small in grain boundary number; according to an photoelectric detector prepared based on the high-quality NiSe nano-film, obtained photoelectric current is improved by four orders of magnitudes compared with a NiSe nanocrystalline film; and the preparation process is simple, the cost is low, good practical value is achieved, and the method can be used for preparing other non-laminated structure material nano-films compatible to traditional plane processes.
Owner:宁波菲利特水处理科技有限公司
A kind of thermostat ceramic material and preparation method thereof
The invention discloses a thermostat ceramic material and a preparation process thereof, and relates to the technical field of ceramic material processing. The thermostat ceramic material disclosed by the invention is prepared from the following raw materials in parts by weight: α-Al 2 o 3 80-90 parts of fine powder, 5-10 parts of γ-alumina, MgO-Al 2 o 3 ‑3-5 parts of CaO glass powder, 2-5 parts of silicon oxide, 2-3 parts of binder and 1.5-2 parts of dispersant; the preparation process is: α‑Al 2 o 3 Micronized powder and MgO‑Al 2 o 3 ‑The surface of the CaO glass powder is modified with a coupling agent, then mixed and reacted to obtain a pre-mixture; then mixed and ground with other components of the ceramic material to obtain a slurry; granulated and sintered. The invention provides a thermostat ceramic material, which is mainly used on the thermostat housing, supporting parts and transmission parts, has high mechanical strength, compressive strength and insulation resistance, and has low thermal conductivity and Excellent wear resistance ensures the safe use of the thermostat and greatly prolongs the service life of the thermostat.
Owner:新化县顺达电子陶瓷有限公司
Monomer auto-polymerization assisted synthesized perovskite solar cell and preparation method thereof
PendingCN114284441ASimple stepsEasy to operateSolid-state devicesSemiconductor/solid-state device manufacturingThin membranePerovskite solar cell
The invention provides a perovskite solar cell synthesized under the assistance of monomer auto-polymerization and a preparation method thereof, and the method specifically comprises the following steps: adding an easily-polymerized monomer into a cesium bromide aqueous solution, then spin-coating the monomer on a titanium dioxide mesoporous electronic layer loaded lead bromide film, and introducing a monomer auto-polymerization assisted grain growth strategy to prepare the perovskite solar cell. A perovskite film is synthesized through a two-step spin-coating method, and finally, a carbon electrode is scraped and coated to assemble the solar cell. A two-step method capable of accurately controlling the raw material ratio is adopted, monomer additive self-polymerization is utilized to regulate the crystallization speed of perovskite, an electron-donating group of a monomer passivates metal ion state defects of perovskite, monomer self-polymerization provides a space for growth of crystal grains, stress generated in the annealing process of the perovskite thin film is eliminated, and the perovskite thin film is prepared. The high-purity perovskite thin film with large grain size, low defect state density, high energy level matching degree and low surface roughness is prepared, and the photovoltaic performance of the cell is improved. The method is simple in preparation steps, high in repeatability, green and economical, and has commercial application prospects.
Owner:OCEAN UNIV OF CHINA
A kind of preparation method of large-area non-layer structure nise nano film
InactiveCN106129171BQuality improvementRefine the grain sizeFinal product manufactureVacuum evaporation coatingPhotovoltaic detectorsPhotodetector
The invention discloses a preparation method of a large-area non-layered structure NiSe nano thin film. The method comprises the steps of preparing the NiSe nano thin film; transferring the NiSe nano thin film; and constructing an NiSe nano thin film photodetector. The non-layered structure NiSe nano thin film obtained by growth through a solid-phase reaction method is good in quality; the grain sizes are large; and the number of grain boundaries is small. On the basis of the photodetector prepared from the high-quality NiSe nano thin film, the obtained photocurrent is improved by four orders of magnitude in comparison with that of the NiSe nano-crystalline thin film. The preparation technology is simple; the cost is low; the method has relatively good practical value; and the method can be used for preparing other non-layered structure material nano thin films compatible with a traditional planar process.
Owner:HEFEI UNIV OF TECH
A kind of preparation method of perovskite film and its application in perovskite solar cell
ActiveCN109950410BImprove conductivityPromote migrationSolid-state devicesSemiconductor/solid-state device manufacturingSemiconductor materialsChlorobenzene
The invention provides a method for preparing a perovskite film and the application of the perovskite film in a perovskite solar cell. The method comprises the steps of performing spin coating of a perovskite precursor solution on an ITO glass substrate by a one-step method at a speed of 4000 r, dropping a chlorobenzene solution with a dissolved n-type semiconductor material of a polymer side chain onto the substrate which is rotating at a high speed after the 8 seconds of spin coating, annealing at 100 DEG C for 30 min, and cooling to the room temperature to obtain the perovskite film. The structure of the perovskite solar cell comprises ITO / NiOx / PVK / PCBM / BCP / Ag from top to bottom. According to the invention, the nucleation of a perovskite crystal can be promoted, the number of grain boundaries is reduced, the grain boundary defects are passivated, and therefore, the effects of optimizing the morphology of the perovskite film and improving the performance of the device are achieved. The n-type doping can be formed to improve the conductivity of a semiconductor, the charge transfer is facilitated, the recombination is reduced, the hysteresis in battery device performance can be avoided, and the stability is effectively improved.
Owner:NANCHANG UNIV
Interconnecting structure for enhancing stress migration reliability
InactiveCN108847411AReduce the tensile stress gradientReduce migration speedSemiconductor/solid-state device detailsSolid-state devicesCritical positionDependability
The invention provides an interconnecting structure for enhancing stress migration reliability, belonging to the technical field of integrated circuits, comprising: a metal 1 and a metal 2 electrically connected with each other, wherein the width of the metal 1 is larger than the width of the metal 2; a plurality of grooves are arranged in the metal. The invention has the advantages that the totalvacancy content in the interconnect structure is relatively reduced due to the existence of grooves; a large tensile stress gradient exists in the vicinity of the groove, and a large number of vacancies in the metal 1 will accumulate in the vicinity of the groove, especially in the dense region of the groove; the tensile stress gradient at and near the contact interface between metal 1 and metal2 is reduced, the tensile stress gradient at and near the contact interface between a via hole and the metal 1 is reduced, and the migration velocity of vacancy to the key position is reduced. Therefore, the present invention reduces the amount of vacancies that can migrate to key locations and the migration speed of the vacancies, thereby improving stress migration reliability.
Owner:WUHAN XINXIN SEMICON MFG CO LTD
Columnar crystal zirconium oxide powder as well as preparation method and application thereof
ActiveCN113683412AHigh visible light transmittanceReduce the number of grain boundariesMetallurgyPhysical chemistry
The invention provides columnar crystal zirconium oxide powder and a preparation method and application thereof. The composition of the columnar crystal zirconium oxide powder is Al<x>YZr<1-a>O<2-0.5a+1.5x>, wherein x is greater than or equal to 0 and less than or equal to 0.003, and a is greater than or equal to 0.03 and less than or equal to 0.12. The column diameter distribution D50 of the columnar crystals in the columnar crystal zirconium oxide powder is 2-3 [mu]m; and the average length of columnar crystals in the columnar crystal zirconium oxide powder is 10-20 [mu]m. The preparation method comprises the steps of liquid preparation, precipitation boiling, separation and crystallization which are carried out in sequence. The linear transmittance of a ceramic chip prepared from the columnar crystal zirconia powder in a visible light range is larger than or equal to 53%, the sintering temperature of the ceramic chip in the preparation process is smaller than or equal to 1100 DEG C, a preparation process is simplified, and energy consumption and production cost are reduced.
Owner:FUJIAN CHANGJIANG GOLDEN DRAGON RARE EARTH CO LTD
A kind of preparation method of three molybdenum phosphide coating
ActiveCN111005023BThickness is easy to controlReduce the number of grain boundariesMetallic material coating processesHydrogen atmosphereMaterials science
Owner:CHINA NUCLEAR BAOTOU GUANGHUA CHEM IND
A kind of compound thin film and preparation method thereof, compound thin film solar cell
ActiveCN110676351BEasy to industrializeQuality improvementFinal product manufacturePhotovoltaic energy generationCrystallographyPhysical chemistry
The invention discloses a compound thin film, a preparation method thereof, and a compound thin film solar cell, and relates to the technical field of batteries. The compound thin film is prepared by annealing the absorption layer precursor doped with Bi under low temperature conditions. The compound film is doped with VA element Bi, so that during the annealing process, the doped Bi element will react to form a low-melting point compound and act as a flux to promote the crystallization of the absorbing layer film, reducing defects and recombination centers in the film, thereby It can improve the quality of the film layer, thereby improving the performance of the corresponding battery device, and then effectively solve the problem of growing the absorbing layer of high-quality compound thin-film batteries under low-temperature preparation conditions, and provide more opportunities for promoting the industrial development of flexible PI substrate compound thin-film solar cells. many possible avenues.
Owner:SUN YAT SEN UNIV
Two-layer MCrAlY bonding layer and preparation method thereof
InactiveCN101791893BAvoid damageExtend service timeVacuum evaporation coatingSputtering coatingElectron beam physical vapor depositionSingle crystal superalloy
The invention discloses a two-layer MCrAlY bonding layer and a preparation method thereof, which uses the plasma-assisted electron beam physical vapor deposition technology to prepare a coating with the following structure: the bottom layer is a low-aluminum (3-5wt.%) MCrAlY layer with a preferential-growing equiaxed crystal structure with the thickness of 5-20 micro meters and the crystal size of 20-50 micro meters; and the upper layer is a high-aluminum (8-12wt.%) MCrAlY layer with a columnar crystal structure, the thickness of 20-100 micro meters and the crystal size less than 1 micro meter. The two-layer structure can reduce the element interdiffusion between the MCrAlY coating and a high-temperature alloy matrix, therefore, the coating has better high-temperature oxidation resistance. Besides, the two-layer structure can inhibit the recrystallization, the TCP phase separation and the formation of a secondary reaction zone (SRZ) of the directionally solidified high-temperature alloy, the single-crystal high-temperature alloy and the like due to the deposition of an oxidation resistant coating.
Owner:BEIHANG UNIV
A kind of sicp/al-si-cu composite powder material and preparation method
ActiveCN113278854BStable Super CoolingReduce burning lossTransportation and packagingMetal-working apparatusParticle-size distributionInterface bonding
The invention discloses a SiCp / Al-Si-Cu composite powder material and a preparation method thereof, comprising the following steps: S1, first designing the composition of the SiCp / Al-Si-Cu composite material; S2, pretreating the SiC powder, Improve the wettability of SiCp and aluminum alloy melt; S3, melt the alloy, after melting, add SiCp at 580-700°C, stir evenly, and realize SiCp / Al-Si-Cu interface bonding; S4, carry out melt and Control of production process such as atomization parameters, preparation of powder. It breaks through the difficulty of directly preparing SiCp / Al‑Si‑Cu composite material powders, and can prepare powders with high purity, high sphericity, controllable particle size distribution, and uniform mixing, with excellent physical properties, process properties and mechanical properties of finished products , which can meet the demand of powder metallurgy process for powder technology.
Owner:NONFERROUS METALLIC OF HEBEI NEW LIZHONG GRP CO LTD
A method for preparing nitrogen-aluminum co-doped p-type zinc oxide film
ActiveCN104818452BLow resistivityOptimizing Process ParametersVacuum evaporation coatingSputtering coatingZinc nitrideOxygen
Owner:LINGNAN NORMAL UNIV
High temperature and creep resistance corundum-mullite load bearing board and preparation method thereof
ActiveCN101423414BGood resistance to creep ruptureCreep Rupture PreventionHigh-temperature corrosionCalcination
Owner:SINOSTEEL LUOYANG INST OF REFRACTORIES RES
Perovskite solar cell based on halogenated oxyhydroxide quantum dot interface layer and preparation method
ActiveCN113178522BExcellent n-type electronic conductivitySimple preparation techniqueSolid-state devicesSemiconductor/solid-state device manufacturingElectrical batteryPerovskite (structure)
The invention provides a perovskite solar cell based on the interface layer of halogenated oxyhydroxide quantum dots and a preparation method, in particular, the halogenated oxyhydroxide quantum dots are prepared by a solution method, and are spin-coated on an electron transport layer supported by conductive glass The surface is used as an interface modification layer, and then a perovskite light-absorbing layer is prepared by liquid-phase spin coating, and a carbon back electrode is deposited by coating method to make a perovskite solar cell. The invention utilizes the group chemical properties, high electrical conductivity and tunability of the energy band structure of the halogenated oxyhydroxide quantum dots, on the one hand, passivates the surface defects of the electron transport layer and the perovskite layer, improves the quality of the perovskite film, and increases the number of electrons. The migration rate and reduction of carrier recombination, on the other hand, promote electron transfer and improve interfacial energy level alignment, enhance charge extraction and reduce energy loss, effectively improving the efficiency and stability of perovskite solar cells. The preparation technology of the invention is simple, the raw materials are cheap and easy to obtain, the material optimization and improvement space is large, and the invention has a great application prospect.
Owner:OCEAN UNIV OF CHINA
Strip-shaped composite substrate for LED epitaxy and preparation method and preparation device of strip-shaped composite substrate
The invention relates to a strip-shaped composite substrate for LED epitaxy and a preparation method and a preparation device thereof, the substrate is a sapphire substrate, patterns on the sapphire substrate are strip-shaped, a plurality of patterns are periodically arranged, and an interval exists between every two adjacent patterns; the orientations of the patterns are consistent; the pattern bottom width is greater than the top width; the pattern is made of Al2O3, the side wall of the pattern is covered with a plurality of SiO2 layers, and gaps exist between the SiO2 layers and the sapphire substrate. According to the composite substrate, the light emitting efficiency of an LED is improved through the periodically arranged strip-shaped patterns, the polarization direction of emergent light can be controlled, and polarized light is obtained while the light emitting efficiency of the LED is improved. The preparation method can be used for preparing a multi-layer composite structure, the polarized light extraction efficiency is improved, meanwhile, the deposition position of the composite structure can be controlled, the composite structure is only deposited on the pattern side wall, no pattern area is deposited, and the purpose is that the epitaxial technology does not need to be changed.
Owner:福建中晶科技有限公司
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