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78 results about "Bi element" patented technology

Transparent conducting thin film with enhanced thermal stability and preparation method and application thereof

The invention relates to a transparent conducting thin film with enhanced thermal stability and a preparation method and application thereof. The transparent conducting thin film consists of a substrate, a first semiconductor layer, a silver alloy layer and a second semiconductor layer sequentially from bottom to top; according to the silver alloy layer, metal silver is combined with aluminum, zinc, titanium, copper, magnesium, nickel, rare earth elements or chromium to form a bi-element silver alloy layer or a multi-element silver alloy layer. The transparent conducting thin film provided by the invention can be used for photoelectric devices, such as organic light-emitting devices (OLEDs), organic solar cells and perovskite batteries; furthermore, on the basis of improving the thermal stability of the photoelectric devices, the dose of the photoelectric devices on a silver material per unit area can be reduced, device cost can be beneficially controlled, resources are saved; and the transparent conducting thin film also can be applied to magnetic shielding, special functional window coatings, transparent heat preservation building glass and the like.
Owner:SHANGHAI UNIVERSITY OF ELECTRIC POWER

A-B site simultaneously substituting microwave dielectric ceramic material and preparation method thereof

The invention provides an A-B site simultaneously substituting microwave dielectric ceramic material and a preparation method thereof. The general chemical formula of the material is (Ba1-aAa)6-3x(Nd1-bBb)8+2x(Ti1-cCc)18O54, C=MN, wherein x=3 / 4, a is greater than or equal to 0.05 and smaller than or equal to 0.2, b is greater than or equal to 0.05 and smaller than or equal to 0.15, c is greater than or equal to 0.02 and smaller than or equal to 0.08, A represents divalent Ca and Sr elements substituting A1 sites, B represents trivalent Sm and Bi elements substituting A2 sites, M represents Nb with the valence state higher than tetravalency, N represents other one or more elements with a valence state lower than tetravalency and an ionic radius similar to Ti, and M and N substitute simultaneously or individually. The preparation method includes: determining the respective mass percentage content according to the general chemical formula, conducting ball mill mixing, performing presintering under 1000-1150DEG C, and then conducting sintering at 1250-1450DEG C. The prepared material has adjustable dielectric constant and frequency-temperature coefficient and at the same time maintains a high Q*f value. The formula does not contain Pb, Cd and other volatile or heavy metals, the performance is greatly enhanced, the raw materials are in abundant supply, and the price is low, so that low cost of high performance microwave ceramics becomes possible.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Multilayer fluxless material with stepped silicon content and preparation method and application thereof

ActiveCN106476359AEffective breakthroughBreak through benefitMetal layered productsHigh concentrationHigh density
The invention discloses a multilayer fluxless material with stepped silicon content and a preparation method and an application thereof. The multilayer fluxless material comprises a core layer, a soldering layer and a cover layer which are composited in order, and the silicon mass content of the soldering layer and cover layer are different. The cover layer and the soldering layer contains a silicon material, by using the different differential concentrations of the silicon content of the soldering layer and the cover layer, the soldering liquid flows from high density to low concentration direction, and an oxide-film is effectively broken through. at the same time, Mg with high concentration flows with the silicon material, then is diffused next to the oxide-film, under condition that oxygen content is low, the diffused magnesium and the aluminium alloy oxide-film are subjected to spinel, the generated spinel is easily coiled into the liquid by the soldering liquid (the silicon material), the soldering liquid is fully contacted, capillary and infiltration effects are employed, so that the welding quality of a soldered joint is saturated. a Bi element is added in the cover layer or the soldering layer, and the oxide-film can be firstly broken through.
Owner:HUAFON NIKKEI ALUMINUM

Method for preparing Bi2Te3 / carbon nano-tube composite material

The invention discloses a method for preparing Bi2Te3 carbon nano tube composite material, which adopts microwave polyol synthesis technique: 1) Bi element compound and Te element compound or Te elementary substance are respectively dissolved in glycol according to the mol ratio of Bi: Te determined by the chemical composition of Bi2Te3 and then stirred and mixed together; 2) ultrasonic dispersion is carried out on the processed carbon nano tube in the glycol, and the pH value is adjusted to be 11-14; 3) according to the mass ratio of 0.1:1-2:1 between the carbon nano tube and the Bi2Te3, the mixed solution in the step 1) is titrated in the solution of the step 2) for reaction at the temperature of 140-190 DEG C in a state of microwave radiation; after the reaction, the products are separated centrifugally and washed, and the solid products are collected and dried. The technique is simple and rapid, and the prepared Bi2Te3 carbon nano tube composite material can be used for improving the thermoelectric property of Bi2Te3-based thermoelectric material. Furthermore, the method can be widely applied to the fields such as physics, chemistry, micro-electronics, material, etc.
Owner:ZHEJIANG UNIV

Piezoelectric material

Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1): xABO3-yA'BO3-zA''B'O3 in which A is a Bi element; A' is a rare earth element including La; B is at least one element selected from Ti, Zn, Sn and Zr; A'' is at least one element selected from Ba, Sr and Ca; B' is at least one element selected from divalent, trivalent, pentavalent, tetravalent, and hexavalent elements; and x is a value of 0.10 or more and 0.95 or less, y is a value of 0 or more and 0.5 or less, and z is a value of 0 or more and 0.7 or less, provided that x + y + z = 1.
Owner:UNIVERSITY OF YAMANASHI +5

Molecular beam epitaxial (MBE) growth method of Bi element regulated and controlled GaAs-based nanowire crystal structure

The invention discloses a molecular beam epitaxial (MBE) growth method of a Bi element regulated and controlled GaAs-based nanowire crystal structure. A Bi element is introduced as an activating agent during the growing process of nanowires in an MBE growth chamber, the ionicity of GaAs is reduced, and the formation of a nanowire zinc blende structure is promoted. The method is characterized in that the Bi evaporator source temperature is regulated during the process of nanowire growth according to the beam equivalent partial pressure of a Ga element so as to control the beam equivalent partial pressure of the Bi element and to ensure that the ratio of the beam equivalent partial pressure of the Bi element to that of the Ga element is x, and the value of x can influence the regulating and controlling ability of the Bi element to the nanowire crystal structure and influence the feature and the phase structure purity of the nanowires. The method has the benefits that the growth of the GaAs-bases nanowires with the zinc blende crystal structure can be easily realized without changing the growth process conditions of MBE, and thus the method is beneficial to the controlled growth of the GaAs-based nanowires with the wurtzite and zinc blende structure and the formation of a homogeneous heterophase heterogeneous structure of the nanowires, and provides an excellent material for preparing nanoscale photoelectronic devices.
Owner:SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI

Bismuth ferrate-barium titanate-bismuth zinc titanate-bismuth aluminate high-temperature lead-free piezoelectric ceramic and preparation method thereof

The invention discloses a bismuth ferrate-barium titanate-bismuth zinc titanate-bismuth aluminate high-temperature lead-free piezoelectric ceramic and a preparation method thereof. The composition general formula of the piezoelectric ceramic is: xBiFeO3-yBaTiO3-zBi(Ti0.5Zn0.5)O3+tBiAlO3+mP+nMnCO3+2.5%Bi2O3, wherein x, y, z, t, m and n represent mole fractions, 0.6<=x<=0.8, 0.15<=y<=0.3, 0.05<=z<=0.15, 0<t<=0.10, 0<m<=0.1, 0<n<=0.1, and 2.5% mol of Bi2O3 is used to make up the volatilization of the Bi element in the sintering process, and is used as a sintering aid; and P is one or a combination of several sintering aids of Ba(W0.5Cu0.5)O3, CuO and Li2CO3. The preparation method comprises the working procedures of batching according to the composition general formula, ball milling, molding,glue discharge, sintering and the like. The high-temperature lead-free piezoelectric ceramic is prepared, the Curie temperature T<c> is up to 596 DEG C, the depolarization temperature T<d> is up to 580 DEG C, and the highest piezoelectric constant is up to 137 pC / N. The system ceramics are expected to be applied in high temperature fields such as aerospace, nuclear power, petroleum exploration and the like.
Owner:GUILIN UNIV OF ELECTRONIC TECH

Red fluorescent powder and preparation method thereof

The invention discloses a red fluorescent powder and a preparation method thereof. The chemical composition formula is SrBi2(1-x)Eu2xTeO7, wherein x is mole percent of the doping element Eu relative to the Bi element, and x is greater than or equal to 0.01 and smaller than or equal to 0.90. The preparation method comprises the following steps: by using strontium oxide or carbonate as the raw material of strontium element, bismuth oxide or nitrate as the raw material of bismuth element, tellurium dioxide or tellurium trioxide as the raw material of tellurium element and europium oxide or nitrate as the raw material of europium element, mixing and grinding in an agate mortar to obtain an initial mixture, sintering at 800-900 DEG C in an air atmosphere for 2-8 hours, and grinding to obtain the product. The luminescent material can effectively absorb ultraviolet light and blue light within the range of 300-500nm; the generated main emission peak is 617nm red light emission; and the fluorescent powder has the advantages of high luminescent intensity, high color purity and favorable color coordinates, and is suitable to be used as the red light part of the luminescent material for LED (light-emitting diode).
Owner:NORTHWEST A & F UNIV

Piezoelectric material

Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1):A(ZnxTi(1-x))yM(1-y)O3  (1)where A represents a Bi element, M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value of 0.4≦x≦0.6; and y represents a numerical value of 0.17≦y≦0.60.
Owner:CANON KK +3
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